US6133095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for creating diffusion areas for sources and drains without an etch step
Assignee: Spansion Israel Ltd
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Filing: 1999-02-04
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Granted: 2000-10-17
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Expires: 2019-02-04
Abstract
Abstract A method for manufacturing a memory array having a plurality of memory cells thereon and diffusion areas therebetween includes the steps of laying down a layer of silicon nitride, defining the diffusion areas and creating diffusion oxides over the diffusion areas. Both steps of laying down and defining occur without etching any part of the layer of silicon nitride. The step of creating diffusion oxides includes the steps of creating porous silicon nitride from portions of the silicon nitride layer wherever diffusion oxides are desired (typically by laying down photoresist in a desired pattern and bombarding the silicon nitride layer with ions) and oxidizing both the porous silicon nitride and the silicon substrate through the porous silicon nitride thereby to create silicon oxy-nitride and silicon dioxide, respectively. The present invention also includes a semiconductor chip having diffusion or bit line oxides formed of at least silicon oxy-nitride.
Inventors
- 👤 Boaz Eitan
- 👤 Israel Rotstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:39
CPC Classifications
H; H10; H10B; H10B43/00; H10B43/30; H10B20/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
70 words
A method for manufacturing a memory array having a plurality of memory cells thereon and diffusion areas therebetween, said memory cells having silicon nitride therein, the method comprising the steps of: laying down a layer of silicon nitride; defining said diffusion areas without etching any part of said layer of silicon nitride; and creating diffusion oxides over said diffusion areas without etching any part of said layer of silicon nitride.
Claim 2
Independent Claim
70 words
A method for manufacturing a memory array having a plurality of memory cells thereon and diffusion areas therebetween, said memory cells having silicon nitride therein, the method comprising the steps of: laying down a layer of silicon nitride; defining said diffusion areas without etching any part of said layer of silicon nitride; and creating diffusion oxides over said diffusion areas without etching any part of said layer of silicon nitride.
Claim 3
Dependent Claim
65 words
A method according to claim 1 and wherein said step of creating diffusion oxides includes the steps of: creating porous silicon nitride from portions of said silicon nitride layer wherever diffusion oxides are desired; and oxidizing said porous silicon nitride and a silicon substrate through said porous silicon nitride thereby respectively creating silicon oxy-nitride elements and silicon dioxide elements which together form said diffusion oxides.
Claim 4
Dependent Claim
36 words
A method according to claim 2 and wherein said second step of creating includes the step of laying down photoresist in a desired pattern followed by the step of bombarding said silicon nitride layer with ions.
Claim 5
Dependent Claim
26 words
A method according to claim 3 and wherein said step of defining occurs after said step of laying down photoresist and before said step of bombarding.
Claim 6
Independent Claim
82 words
A method for manufacturing a memory array having a plurality of memory cells thereon and diffusion areas therebetween, said memory cells having silicon nitride therein, the method comprising the steps of: laying down a layer of silicon nitride; in one step, implanting said diffusion areas and creating porous silicon nitride from portions of said silicon nitride layer over said diffusion areas without etching any part of said layer of silicon nitride; and creating diffusion oxides from at least said porous silicon nitride.
Claim 7
Independent Claim
82 words
A method for manufacturing a memory array having a plurality of memory cells thereon and diffusion areas therebetween, said memory cells having silicon nitride therein, the method comprising the steps of: laying down a layer of silicon nitride; in one step, implanting said diffusion areas and creating porous silicon nitride from portions of said silicon nitride layer over said diffusion areas without etching any part of said layer of silicon nitride; and creating diffusion oxides from at least said porous silicon nitride.
Claim 8
Dependent Claim
48 words
A method according to claim 5 and wherein said step of creating diffusion oxides includes the step of oxidizing said porous silicon nitride and a silicon substrate through said porous silicon nitride thereby respectively creating silicon oxy-nitride elements and silicon dioxide elements which together form said diffusion oxides.
Claim 9
Dependent Claim
25 words
A method according to claim 5 and also including the step of laying down photoresist in a desired pattern prior to said step of implanting.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |