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US6314013B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Stacked integrated circuits

Assignee: Micron Technology Inc
•
Filing: 2000-09-19
•
Granted: 2001-11-06
•
Expires: 2020-09-19
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Abstract

Abstract System modules are described which include a stack of interconnected semiconductor dies. The semiconductor dies are interconnected by micro bump bonding of coaxial lines that extend through the thickness of the various dies. The coaxial lines also are selectively connected to integrated circuits housed within the dies. In one embodiment, a number of memory dies are interconnected in this manner to provide a memory module.

Inventors

  • 👤 Kie Y. Ahn
  • 👤 Leonard Forbes

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 23:09
CPC Classifications
H; H10; H10W; H10W90/00; G; G11; G11C; G11C5/00; G11C5/02; G11C5/04; G11C5/06; H10W20/00; H10W20/20; H05; H05K; H05K1/00; H05K1/02; H05K1/0213; H05K1/0216; H05K1/0218; H05K1/0219; H05K1/14; H05K1/144; H10W44/00; H10W44/20; H10W44/203; H10W44/209; H10W44/212; H10W72/00; H10W72/01; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/90; H10W72/941; H10W72/9415; H10W72/951; H10W72/952; H10W90/20; H10W90/22; H10W90/291; H10W90/297; H10W90/701; H10W90/721

Claims Analysis

Total Claims: 32
Claim 1
Independent Claim 113 words
A method for interconnecting integrated circuits to form a system module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having an integrated circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 2
Independent Claim 113 words
A method for interconnecting integrated circuits to form a system module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having an integrated circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 3
Dependent Claim 19 words
The method of claim 1 , wherein selectively forming microbumps comprises selectively forming controlled-collapse chip connection (C-4) solder pads.
Claim 4
Dependent Claim 30 words
The method of claim 1 , wherein selectively aligning the plurality of semiconductor chips comprises aligning corresponding microbumps on adjacent surfaces of the plurality of semiconductor chips in the stack.
Claim 5
Dependent Claim 19 words
The method of claim 1 , wherein bonding the microbumps comprises bringing the microbumps into contact with each other.
Claim 6
Independent Claim 113 words
A method for interconnecting memory circuits to form a memory module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 7
Independent Claim 113 words
A method for interconnecting memory circuits to form a memory module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of a plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 8
Dependent Claim 19 words
The method of claim 5 , wherein selectively forming microbumps comprises selectively forming controlled-collapse chip connection (C-4) solder pads.
Claim 9
Dependent Claim 30 words
The method of claim 5 , wherein selectively aligning the plurality of semiconductor chips comprises aligning corresponding microbumps on adjacent surfaces of the plurality of semiconductor chips in the stack.
Claim 10
Dependent Claim 19 words
The method of claim 5 , wherein bonding the microbumps comprises bringing the microbumps into contact with each other.
Claim 11
Independent Claim 99 words
A method for interconnecting a plurality of semiconductor dies to form a memory cube, the method comprising: selectively forming mircobumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor dies, each semiconductor die; selectively aligning the plurality of semiconductor dies to form a stack; and for each interface between adjacent semiconductor dies in the stack, bonding the microbumps on the surface of one semiconductor die with the microbumps on the surface of the other, adjacent semiconductor die.
Claim 12
Independent Claim 99 words
A method for interconnecting a plurality of semiconductor dies to form a memory cube, the method comprising: selectively forming mircobumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor dies, each semiconductor die; selectively aligning the plurality of semiconductor dies to form a stack; and for each interface between adjacent semiconductor dies in the stack, bonding the microbumps on the surface of one semiconductor die with the microbumps on the surface of the other, adjacent semiconductor die.
Claim 13
Dependent Claim 19 words
The method of claim 9 , wherein selectively forming microbumps comprises selectively forming controlled-collapse chip connection (C-4) solder pads.
Claim 14
Dependent Claim 30 words
The method of claim 9 , wherein selectively aligning the plurality of semiconductor dies comprises aligning corresponding mircobumps on adjacent surfaces of the plurality of semiconductor dies in the stack.
Claim 15
Dependent Claim 19 words
The method of claim 9 , wherein bonding the mircobumps comprises bringing the mircobumps into contact with each other.
Claim 16
Independent Claim 126 words
A method for forming an information handling system, the method comprising: providing a processor circuit; interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip; and communicatively coupling the processor circuit to the memory module.
Claim 17
Independent Claim 126 words
A method for forming an information handling system, the method comprising: providing a processor circuit; interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip; and communicatively coupling the processor circuit to the memory module.
Claim 18
Dependent Claim 19 words
The method of claim 13 , wherein selectively forming microbumps comprises selectively forming controlled-collapse chip connection (C-4) solder pads.
Claim 19
Dependent Claim 30 words
The method of claim 13 , wherein selectively aligning the plurality of semiconductor chips comprises aligning corresponding mircobumps on adjacent surfaces of the plurality of semiconductor chips in the stack.
Claim 20
Dependent Claim 19 words
The method of claim 13 , wherein bonding the microbumps comprises bringing the microbumps into contact with each other.
Claim 21
Independent Claim 184 words
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising; forming a plurality of coaxial conductors, comprising; removing material from each semiconductor chip to form a hole through the thickness of each semiconductor chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor; and filling in the remaining space of the hole with a conducting material to form a center conductor selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.
Claim 22
Independent Claim 184 words
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising; forming a plurality of coaxial conductors, comprising; removing material from each semiconductor chip to form a hole through the thickness of each semiconductor chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor; and filling in the remaining space of the hole with a conducting material to form a center conductor selectively forming microbumps on first and second ends of a plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.
Claim 23
Dependent Claim 20 words
The method of claim 17 wherein forming the outer conductor comprises depositing tungsten on the inner wall of the hole.
Claim 24
Dependent Claim 23 words
The method of claim 17 wherein forming the outer conductor comprises diffusing a conductivity enhancing impurity into the inner wall of the hole.
Claim 25
Dependent Claim 19 words
The method of claim 17 wherein forming an insulator layer comprises coating the outer conductor with an insulating material.
Claim 26
Dependent Claim 22 words
The method of claim 20 wherein coating the outer conductor with an insulating material comprises coating the outer conductor with silicon dioxide.
Claim 27
Dependent Claim 29 words
The method of claim 17 wherein filling in the remaining space of the hole with a conducting material comprises filling in the remaining space of the hole with aluminum.
Claim 28
Independent Claim 217 words
The method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: forming a plurality of coaxial conductors, comprising: removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor comprising: filling in the remaining space of the hole with polysilicon; coating the first and second sides of the chip with a layer of aluminum; heating the chip to an anneal temperature, causing substitution of aluminum for polysilicon; and removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip selectively forming mircobumps on first and second ends of the plurality coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 29
Independent Claim 217 words
The method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: forming a plurality of coaxial conductors, comprising: removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor comprising: filling in the remaining space of the hole with polysilicon; coating the first and second sides of the chip with a layer of aluminum; heating the chip to an anneal temperature, causing substitution of aluminum for polysilicon; and removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip selectively forming mircobumps on first and second ends of the plurality coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the microbumps on the surface of one semiconductor chip with the microbumps on the surface of the other, adjacent semiconductor chip.
Claim 30
Dependent Claim 25 words
The method of claim 23 wherein heating the chip to an anneal temperature comprises heating the chip to an anneal temperature around 500 degrees Celsius.
Claim 31
Independent Claim 247 words
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: forming a plurality of coaxial conductors, comprising: removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor; filling in the remaining space with aluminum to form a center conductor comprising: filling in the remaining space of the hole with polysilicon; coating the first and second sides of the chip with a layer of aluminum; coating a layer of titanium on top of the layer of aluminum; heating the chip to an anneal temperature of about 450 degrees Celsius, causing substitution of aluminum for polysilicon; and removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip selectively forming mircobumps on first and second ends of the plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the mircobumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.
Claim 32
Independent Claim 247 words
A method for interconnecting a plurality of semiconductor chips to form a memory module, the method comprising: forming a plurality of coaxial conductors, comprising: removing material from the chip to form a hole through the thickness of the chip, the hole having an inner wall; forming an outer conductor on the inner wall of the hole; forming an insulator layer radially adjacent the outer conductor; filling in the remaining space with aluminum to form a center conductor comprising: filling in the remaining space of the hole with polysilicon; coating the first and second sides of the chip with a layer of aluminum; coating a layer of titanium on top of the layer of aluminum; heating the chip to an anneal temperature of about 450 degrees Celsius, causing substitution of aluminum for polysilicon; and removing excess aluminum and polysilicon from the first and second sides of the semiconductor chip selectively forming mircobumps on first and second ends of the plurality of coaxial conductors, the first and second ends of the conductors corresponding with first and second opposite surfaces of the plurality of semiconductor chips, each semiconductor chip having a memory circuit that is formed in at least one working surface of the semiconductor chip; selectively aligning the plurality of semiconductor chips to form a stack; and for each interface between adjacent semiconductor chips in the stack, bonding the mircobumps on the surface of one semiconductor chip with the mircobumps on the surface of the other, adjacent semiconductor chip.

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2004-11-05 2005-05-07 2005-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2008-11-05 2009-05-07 2009-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2012-11-05 2013-05-07 2013-11-06 $7700.00 Window Closed / Lapsed

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