US5532506A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit adapted for improved thermal impedance
Assignee: Texas Instruments Inc
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Filing: 1994-11-14
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Granted: 1996-07-02
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Expires: 2014-11-14
Abstract
Abstract A flip-chip integrated circuit 1100 having a transistor 1108 formed at a frontside surface of a substrate 1104. An airbridge 1106 may be formed over portions of the transistor wherein a top surface of the airbridge is spaced from the frontside surface by a distance approximately equal to, or greater than, the thickness of the substrate. The circuit may also include a transmission line 1114 at the frontside surface and a heatsink 1102 coupled to the airbridge.
Inventors
- 👤 Hua Q. Tserng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/483; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W44/00; H10W44/20; H10W44/226; H10W44/234; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W90/00; H10W44/203; H10W44/216; H10W44/251; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/531; H10W72/536; H10W72/851; H10W72/874; H10W72/879; H10W72/884; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
95 words
An integrated circuit, comprising: (a) at least one transistor formed at a frontside surface of a substrate; (b) at least one transmission line at said frontside surface; (c) an airbridge formed over portions of said at least one transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) a heatsink coupled to said airbridge; and (e) a conducting via through said substrate coupling said at least one transistor to a bond pad at a backside surface.
Claim 2
Dependent Claim
95 words
An integrated circuit, comprising: (a) at least one transistor formed at a frontside surface of a substrate; (b) at least one transmission line at said frontside surface; (c) an airbridge formed over portions of said at least one transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) a heatsink coupled to said airbridge; and (e) a conducting via through said substrate coupling said at least one transistor to a bond pad at a backside surface.
Claim 3
Dependent Claim
16 words
The circuit of claim 1, further comprising a groundplane at said backside surface of said substrate.
Claim 4
Dependent Claim
11 words
The circuit of claim 1, wherein said heatsink comprises a dielectric.
Claim 5
Dependent Claim
18 words
The circuit of claim 3, wherein said dielectric is taken from a group consisting of AIN and BeO.
Claim 6
Dependent Claim
10 words
The circuit of claim 1, wherein said heatsink is metal.
Claim 7
Dependent Claim
12 words
The circuit of claim 5, wherein said metal is plated with gold.
Claim 8
Dependent Claim
10 words
The circuit of claim 6, wherein said metal is copper.
Claim 9
Dependent Claim
23 words
The circuit of claim 1, wherein said bondpad at said backside surface of said substrate is a conductive element in a coplanar waveguide.
Claim 10
Dependent Claim
15 words
The circuit of claim 3, wherein said dielectric heatsink is coupled to a metal heatsink.
Claim 11
Dependent Claim
121 words
An integrated circuit, comprising: (a) at least one transistor formed at a frontside surface of a substrate; (b) at least one transmission line at said frontside surface; (c) an airbridge formed over portions of said at least one transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) dielectric covering said at least one transmission line such that a surface of said dielectric is substantially planar with said top surface of said airbridge; (e) a heatsink coupled to said airbridge; and (f) a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface.
Claim 12
Dependent Claim
121 words
An integrated circuit, comprising: (a) at least one transistor formed at a frontside surface of a substrate; (b) at least one transmission line at said frontside surface; (c) an airbridge formed over portions of said at least one transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) dielectric covering said at least one transmission line such that a surface of said dielectric is substantially planar with said top surface of said airbridge; (e) a heatsink coupled to said airbridge; and (f) a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface.
Claim 13
Dependent Claim
10 words
The circuit of claim 10, wherein said dielectric is polyimide.
Claim 14
Dependent Claim
11 words
The circuit of claim 10, wherein said heatsink is a dielectric.
Claim 15
Dependent Claim
18 words
The circuit of claim 12, wherein said dielectric is taken from a group consisting of AIN and BeO.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-02 | 2000-01-01 | 2000-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-02 | 2004-01-01 | 2004-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-02 | 2008-01-01 | 2008-07-02 | $7700.00 | Window Closed / Lapsed |