Patent US6245604B1 successfully refreshed from Google Patents.
US6245604B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits
Assignee: Micron Technology Inc
•
Filing: 1996-01-16
•
Granted: 2001-06-12
•
Expires: 2016-01-16
Abstract
Abstract A BiCMOS integrated circuit is fabricated using a minimum number of wafer processing steps and yet offers the IC circuit designer five (5) different transistor types. These types include P-channel and N-channel MOS transistors and three different bipolar transistors whose emitters are all formed by a different process and all are characterized by different current gains and different breakdown voltages. A differential silicon dioxide/silicon nitride masking technique is used in the IC fabrication process wherein both P-type buried layers (PBL) and N-type buried layers (NBL) are formed in a silicon substrate using a single mask set and further wherein P-type wells and N-type wells are formed above these buried layers in an epitaxial layer, also using a single SiO 2 /Si 3 N 4 differential mask set. Two of the bipolar transistor emitters are formed by out diffusion from first and second levels of polysilicon, whereas the emitter of the third bipolar transistor is formed by ion implantation doping.
Inventors
- 👤 Michael Violette
- 👤 Martin Ceredig Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:20
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
133 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: a. forming p-channel and n-channel MOS transistors in a silicon substrate; b. forming a first level of polysilicon on the MOS transistors and connecting the first level of polysilicon to the MOS transistors within the substrate, c. forming a first bipolar transistor base region in the substrate, d. forming a second level of doped polysilicon on the bipolar transistor base region, e. out-diffusing impurities from the second level of polysilicon into the transistor base region, and f. forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 2
Dependent Claim
133 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: a. forming p-channel and n-channel MOS transistors in a silicon substrate; b. forming a first level of polysilicon on the MOS transistors and connecting the first level of polysilicon to the MOS transistors within the substrate, c. forming a first bipolar transistor base region in the substrate, d. forming a second level of doped polysilicon on the bipolar transistor base region, e. out-diffusing impurities from the second level of polysilicon into the transistor base region, and f. forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 3
Dependent Claim
173 words
A process for fabricating BICMOS integrated circuits comprising: forming P-type and N-type buried layers in a silicon substrate, forming an epitaxial layer on top of the buried layers, forming P-type and N-type wells in the epitaxial layer over the buried layers, forming P-channel and N-channel MOS transistors in wells within the epitaxial layer, forming a first bipolar transistor base region in yet another well within the epitaxial layer, and connecting a layer of polysilicon at either a first or second level to the first bipolar transistor base region to thereby form by out-diffusion a bipolar transistor emitter region, forming a second bipolar transistor base region within another well in the epitaxial layer and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon, and wherein the first level of polysilicon is also photolithographically defined to form a gate electrode for the P-channel and N-channel MOS transistors.
Claim 4
Dependent Claim
173 words
A process for fabricating BICMOS integrated circuits comprising: forming P-type and N-type buried layers in a silicon substrate, forming an epitaxial layer on top of the buried layers, forming P-type and N-type wells in the epitaxial layer over the buried layers, forming P-channel and N-channel MOS transistors in wells within the epitaxial layer, forming a first bipolar transistor base region in yet another well within the epitaxial layer, and connecting a layer of polysilicon at either a first or second level to the first bipolar transistor base region to thereby form by out-diffusion a bipolar transistor emitter region, forming a second bipolar transistor base region within another well in the epitaxial layer and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon, and wherein the first level of polysilicon is also photolithographically defined to form a gate electrode for the P-channel and N-channel MOS transistors.
Claim 5
Dependent Claim
56 words
The process defined in claim 2 which further includes forming yet a third bipolar transistor base region within yet another well within the epitaxial layer, and ion implanting impurities into the third transistor base region to thereby form a third transistor emitter region, and then making an electrical ohmic connection to the third transistor emitter region.
Claim 6
Dependent Claim
44 words
The process defined in claim 3 wherein the first level of polysilicon is formed on and connected to the emitter of the first bipolar transistor and the second level of polysilicon is formed on and connected to the emitter of the second bipolar transistor.
Claim 7
Dependent Claim
46 words
The process defined in claim 4 wherein a thick layer of glass is formed atop the polysilicon levels and atop the epitaxial layer and electrical interconnects are passed through openings or vias formed in the glass layer to make ohmic contacts to all of the transistors.
Claim 8
Dependent Claim
150 words
A process for fabricating a bipolar-CMOS integrated circuit comprising: patterning, from a first polysilicon layer, N-channel MOS transistor gates, P-channel MOS transistor gates and doped islands; out-diffusing impurities from the first polysilicon layer into at least one portion of base regions within a silicon substrate to form emitter regions, the emitter regions each having a depth, for vertical NPN bipolar devices of a first type; using separate masks to pattern N-channel MOS transistor gates and P-channel MOS transistor gates; and patterning, from a second polysilicon layer, doped plugs from which portions of other base regions within the silicon substrate are doped to from emitter regions for vertical NPN bipolar devices of a second type, wherein the depth of the emitter region of the vertical NPN bipolar devices of the second type is less than the depth of the emitter region of the vertical NPN bipolar devices of the first type.
Claim 9
Dependent Claim
150 words
A process for fabricating a bipolar-CMOS integrated circuit comprising: patterning, from a first polysilicon layer, N-channel MOS transistor gates, P-channel MOS transistor gates and doped islands; out-diffusing impurities from the first polysilicon layer into at least one portion of base regions within a silicon substrate to form emitter regions, the emitter regions each having a depth, for vertical NPN bipolar devices of a first type; using separate masks to pattern N-channel MOS transistor gates and P-channel MOS transistor gates; and patterning, from a second polysilicon layer, doped plugs from which portions of other base regions within the silicon substrate are doped to from emitter regions for vertical NPN bipolar devices of a second type, wherein the depth of the emitter region of the vertical NPN bipolar devices of the second type is less than the depth of the emitter region of the vertical NPN bipolar devices of the first type.
Claim 10
Dependent Claim
30 words
The process of claim 6 , which further comprises implanting remaining base regions within the silicon substrate to form emitter regions for vertical NPN bipolar devices of a third type.
Claim 11
Dependent Claim
116 words
A process for fabricating an integrated circuit in a silicon substrate, comprising: forming an N-channel and a P-channel MOS transistor in the substrate; forming a first bipolar transistor base region in the substrate; forming a first level of polysilicon on the MOS transistors and the first bipolar transistor base region; connecting the first level of polysilicon to the MOS transistors; forming a first bipolar transistor emitter region by outdiffusion impurities from the first polysilicon level; forming a second bipolar transistor base region in the substrate; connecting the second bipolar transistor base region to the first level of polysilicon; and forming a second bipolar transistor emitter region by out diffusing impurities from the first level of polysilicon.
Claim 12
Dependent Claim
116 words
A process for fabricating an integrated circuit in a silicon substrate, comprising: forming an N-channel and a P-channel MOS transistor in the substrate; forming a first bipolar transistor base region in the substrate; forming a first level of polysilicon on the MOS transistors and the first bipolar transistor base region; connecting the first level of polysilicon to the MOS transistors; forming a first bipolar transistor emitter region by outdiffusion impurities from the first polysilicon level; forming a second bipolar transistor base region in the substrate; connecting the second bipolar transistor base region to the first level of polysilicon; and forming a second bipolar transistor emitter region by out diffusing impurities from the first level of polysilicon.
Claim 13
Dependent Claim
51 words
The process of claim 8 , and further comprising: forming a third bipolar transistor base region in the substrate; forming a third bipolar transistor emitter region by ion implantation of impurities into the base region; and forming a metal connection defining an ohmic contact to the third bipolar transistor emitter region.
Claim 14
Dependent Claim
199 words
A process for fabricating an integrated circuit, comprising: forming N-type and P-type buried layers in a silicon substrate; forming an epitaxial layer above the N-type and P-type buried layers; forming different conductivity type wells in the epitaxial layer; forming N-channel and P-channel MOS transistors in the different conductivity type wells in the epitaxial layer, wherein gates of the N-channel and P-channel MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is in contact with the first polysilicon layer and is formed by outdiffusion impurities from the first layer of polysilicon; forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is in contact with a second layer of polysilicon and is formed by out diffusing impurities from the second layer of polysilicon; and forming a third bipolar transistor in still another well of the epitaxial layer, wherein an emitter of the third bipolar transistor is formed by ion implantation into the epitaxial layer, and wherein an ohmic contact to the emitter is formed with a metal connection.
Claim 15
Dependent Claim
199 words
A process for fabricating an integrated circuit, comprising: forming N-type and P-type buried layers in a silicon substrate; forming an epitaxial layer above the N-type and P-type buried layers; forming different conductivity type wells in the epitaxial layer; forming N-channel and P-channel MOS transistors in the different conductivity type wells in the epitaxial layer, wherein gates of the N-channel and P-channel MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is in contact with the first polysilicon layer and is formed by outdiffusion impurities from the first layer of polysilicon; forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is in contact with a second layer of polysilicon and is formed by out diffusing impurities from the second layer of polysilicon; and forming a third bipolar transistor in still another well of the epitaxial layer, wherein an emitter of the third bipolar transistor is formed by ion implantation into the epitaxial layer, and wherein an ohmic contact to the emitter is formed with a metal connection.
Claim 16
Dependent Claim
16 words
The process according to claim 1 , wherein the steps are performed in the recited order.
Claim 17
Dependent Claim
113 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming p-channel and n-channel MOS transistors in a silicon substrate; forming a first level of polysilicon on the MOS transistors; forming a first bipolar transistor base region in the substrate; forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 18
Dependent Claim
113 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming p-channel and n-channel MOS transistors in a silicon substrate; forming a first level of polysilicon on the MOS transistors; forming a first bipolar transistor base region in the substrate; forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 19
Dependent Claim
21 words
The process according to claim 12 , wherein the second transistor base region is connected to the second level of polysilicon.
Claim 20
Dependent Claim
23 words
The process according to claim 12 , wherein the second transistor emitter region is formed by out-diffusion from the second level of polysilicon.
Claim 21
Dependent Claim
18 words
The process according to claim 14 , wherein the first polysilicon layer is connected to the MOS transistors.
Claim 22
Dependent Claim
128 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming a p-channel MOS transistor in a silicon substrate; forming a first level of polysilicon on the p-channel MOS transistor and connecting the first level of polysilicon to the p-channel MOS transistor within the substrate; forming a first bipolar transistor base region in the substrate, forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 23
Dependent Claim
128 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming a p-channel MOS transistor in a silicon substrate; forming a first level of polysilicon on the p-channel MOS transistor and connecting the first level of polysilicon to the p-channel MOS transistor within the substrate; forming a first bipolar transistor base region in the substrate, forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 24
Dependent Claim
128 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming a n-channel MOS transistor in a silicon substrate; forming a first level of polysilicon on the n-channel MOS transistor and connecting the first level of polysilicon to the n-channel MOS transistor within the substrate; forming a first bipolar transistor base region in the substrate, forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 25
Dependent Claim
128 words
A process for fabricating bipolar-CMOS integrated circuits, comprising: forming a n-channel MOS transistor in a silicon substrate; forming a first level of polysilicon on the n-channel MOS transistor and connecting the first level of polysilicon to the n-channel MOS transistor within the substrate; forming a first bipolar transistor base region in the substrate, forming a second level of doped polysilicon on the bipolar transistor base region; out-diffusing impurities from the second level of polysilicon into the transistor base region; and forming a second bipolar transistor base region in the substrate and connecting the second transistor base region to either the first or second level of polysilicon formed thereon to thereby form a second bipolar transistor emitter region by out-diffusion from either the first or second levels of polysilicon.
Claim 26
Dependent Claim
107 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; and forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a source other than the first level of polysilicon.
Claim 27
Dependent Claim
107 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; and forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a source other than the first level of polysilicon.
Claim 28
Dependent Claim
61 words
The process of claim 18 , Wherein forming the first bipolar transistor includes forming the first bipolar transistor to have a first gain and a first breakdown voltage, and forming the second bipolar transistor includes forming the second bipolar transistor to have a second gain lower than the first gain and a second breakdown voltage higher than the first breakdown voltage.
Claim 29
Dependent Claim
134 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a source other than the first level of polysilicon; and forming a third bipolar transistor in still another well of the epitaxial layer, wherein an emitter of the third bipolar transistor is formed from an ion implantation.
Claim 30
Dependent Claim
134 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a source other than the first level of polysilicon; and forming a third bipolar transistor in still another well of the epitaxial layer, wherein an emitter of the third bipolar transistor is formed from an ion implantation.
Claim 31
Dependent Claim
60 words
The process according to claim 20 , wherein forming the third bipolar transistor includes forming the third bipolar transistor to have a gain greater than the second bipolar transistor and less than the first bipolar transistor, and forming the third bipolar transistor to have a breakdown voltage less than the second bipolar transistor and greater than the first bipolar transistor.
Claim 32
Dependent Claim
103 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; and forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a second level of polysilicon.
Claim 33
Dependent Claim
103 words
A process for fabricating a bipolar CMOS integrated circuit, comprising: forming N-channel and P-channel MOS transistors in different conductivity type wells in an epitaxial layer of a substrate, wherein gates of the MOS transistors are formed of a first level of polysilicon; forming a first bipolar transistor in another well of the epitaxial layer, wherein an emitter of the first bipolar transistor is formed by out-diffusing impurities from the first level of polysilicon; and forming a second bipolar transistor in yet another well of the epitaxial layer, wherein an emitter of the second bipolar transistor is formed from a second level of polysilicon.
References Cited (Backward Citations)
US4345366A
Cited
US4694562A
Cited
US4818720A
Cited
US4737472A
Cited
US4764482A
Cited
US4902640A
Cited
US5354699A
Cited
US4857478A
Cited
US5059549A
Cited
US4847213A
Cited
US5045493A
Cited
US4960726A
Cited
US4987089A
Cited
US5132234A
Cited
US5158463A
Cited
US5192992A
Cited
US5208169A
Cited
US5196356A
Cited
US5286991A
Cited
US5358884A
Cited
US5525530A
Cited
US5494844A
Cited
US5439833A
Cited
US5455444A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-11 | 2004-12-11 | 2005-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-11 | 2008-12-11 | 2009-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-11 | 2012-12-11 | 2013-06-12 | $7700.00 | Window Closed / Lapsed |