US5045493A
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same
Assignee: Panasonic Holdings Corp
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Filing: 1990-04-24
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Granted: 1991-09-03
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Expires: 2010-04-24
Abstract
Abstract A semiconductor device such as a Bi-CMOS having vertical or lateral bipolar transistors and MOS transistors is disclosed. The MOS transistors include a gate electrode made of a first conductive thin film, and sidewall spacers formed on the sides of the gate electrode and consisting of at least one deposition film. The vertical bipolar transistors include an emitter electrode made of a second conductive thin film, and an emitter diffusion window formed in the deposition film which is disposed under the emitter electrode. The lateral bipolar transistors include a base width defining region for defining the base width, and an insulation film formed between the base width defining region and the collector and emitter, and consisting of the deposition film.
Inventors
- 👤 Shuichi Kameyama
- 👤 Kazuya Kikuchi
- 👤 Hiroshi Shimomura
- 👤 Mizuki Segawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:26
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S148/00; Y10S148/009; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
139 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; etching said deposition film at least in the bipolar transistor region to form an emitter diffusion window; and forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window.
Claim 2
Independent Claim
139 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; etching said deposition film at least in the bipolar transistor region to form an emitter diffusion window; and forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window.
Claim 3
Independent Claim
181 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; etching said deposition film at least in the biplar transistor region to form an emitter diffusion window; forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window; and etching further said deposition film by using the anisotropic dry etching technique, to form sidewall spacers on the sides of said gate electrode, said sidewall spacers being made of said deposition film, and to leave said deposition film under said emitter electrode.
Claim 4
Independent Claim
181 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; etching said deposition film at least in the biplar transistor region to form an emitter diffusion window; forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window; and etching further said deposition film by using the anisotropic dry etching technique, to form sidewall spacers on the sides of said gate electrode, said sidewall spacers being made of said deposition film, and to leave said deposition film under said emitter electrode.
Claim 5
Dependent Claim
52 words
A method according to claim 2, wherein said method further comprises a step of forming source and drain diffusion regions of said MOS transistor and also an external base diffusion region of said vertical bipolar transistor, after the step of etching further said deposition film by using an anisotropic dry etching technique.
Claim 6
Independent Claim
224 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a first deposition film on said semiconductor substrate; etching said first deposition film at least in the bipolar transistor region to form an emitter diffusion window; forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window; and forming a second deposition film on said semiconductor substrate; etching further said first and second deposition films by using the anisotropic dry etching technique, to form first sidewall spacers on the sides of said gate electrode, said first sidewall spacers being made of said first and second deposition films, to leave said first deposition film under said emitter electrode, and to form second sidewall spacers on the sides of said emitter electrode, said second sidewall spacers being made of said second deposition film.
Claim 7
Independent Claim
224 words
A method of manufacturing a semiconductor device comprising at least one vertical bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a first deposition film on said semiconductor substrate; etching said first deposition film at least in the bipolar transistor region to form an emitter diffusion window; forming an emitter electrode of said bipolar transistor over said emitter diffusion window, said emitter electrode being made of a second conductive thin film and being larger in size than said emitter diffusion window; and forming a second deposition film on said semiconductor substrate; etching further said first and second deposition films by using the anisotropic dry etching technique, to form first sidewall spacers on the sides of said gate electrode, said first sidewall spacers being made of said first and second deposition films, to leave said first deposition film under said emitter electrode, and to form second sidewall spacers on the sides of said emitter electrode, said second sidewall spacers being made of said second deposition film.
Claim 8
Dependent Claim
55 words
A method according to claim 4, wherein said method further comprises a step of forming source and drain diffusion regions of said MOS transistor and also an external base diffusion region of said vertical bipolar transistor, after the step of etching further said first and second deposition films by using an anisotropic dry etching technique.
Claim 9
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; and forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film.
Claim 10
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; and forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film.
Claim 11
Independent Claim
157 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film; and etching said deposition film by using an anisotropic dry etching technique, to form sidewall spacers on the sides of said gate electrode, said sidewall spacers being made of said deposition film, and to leave said deposition film under said emitter electrode.
Claim 12
Independent Claim
157 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a deposition film on said semiconductor substrate; forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film; and etching said deposition film by using an anisotropic dry etching technique, to form sidewall spacers on the sides of said gate electrode, said sidewall spacers being made of said deposition film, and to leave said deposition film under said emitter electrode.
Claim 13
Dependent Claim
45 words
A method according to claim 7, wherein said method further comprises a step of forming source and drain diffusion regions of said MOS transistor and also an emitter and collector diffusion regions of said lateral bipolar transistor, after the step of etching said deposition film.
Claim 14
Independent Claim
203 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a first deposition film on said semiconductor substrate; forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film; and forming a second deposition film on said semiconductor substrate; etching said first and second deposition films by using the anisotropic dry etching technique, to form first sidewall spacers on the sides of said gate electrode, said first sidewall spacers being made of said first and second deposition films, to leave said first deposition film under said base width defining means, and to form second sidewall spacers on the sides of said base width defining means, said second sidewall spacers being made of said second deposition film.
Claim 15
Independent Claim
203 words
A method of manufacturing a semiconductor device comprising at least one lateral bipolar transistor and at least one MOS transistor, said bipolar and MOS transistors being formed on one semiconductor substrate, comprising the steps of: forming a gate oxide film at least in the MOS transistor region on the main surface of said semiconductor substrate; forming a gate electrode of said MOS transistor on said gate oxide film, said gate electrode being made of a first conductive thin film; forming a first deposition film on said semiconductor substrate; forming a base width defining means for defining the base width of said bipolar transistor, said base width defining means being made of a second conductive thin film; and forming a second deposition film on said semiconductor substrate; etching said first and second deposition films by using the anisotropic dry etching technique, to form first sidewall spacers on the sides of said gate electrode, said first sidewall spacers being made of said first and second deposition films, to leave said first deposition film under said base width defining means, and to form second sidewall spacers on the sides of said base width defining means, said second sidewall spacers being made of said second deposition film.
Claim 16
Dependent Claim
48 words
A method according to claim 9, wherein said method further comprises a step of forming source and drain diffusion regions of said MOS tansistor and also an emitter and collector diffusion regions of said lateral bipolar transistor, after the step of etching said first and second deposition films.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-09-02 | 1995-03-04 | 1995-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-02 | 1999-03-04 | 1999-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-02 | 2003-03-04 | 2003-09-03 | $7700.00 | Window Closed / Lapsed |