Patent US6093620A successfully refreshed from Google Patents.
US6093620A
Expired / Lapsed
US
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Method of fabricating integrated circuits with oxidized isolation
Assignee: National Semiconductor Corp
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Filing: 1989-08-18
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Granted: 2000-07-25
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Expires: 2009-08-18
Abstract
Abstract A thin silicon epitaxial layer, formed on a silicon substrate, is subdivided into electrically isolated pockets by a grid of oxidized regions of epitaxial silicon material which extend through the epitaxial layer to a laterally extending PN junction.
Inventors
- 👤 Douglas L. Peltzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10D; H10D1/00; H10D1/40; H10D1/43; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10P76/00; H10P76/40; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/031; H10W10/10; H10W10/13; H10W10/30; Y; Y10; Y10S; Y10S148/00; Y10S148/03; Y10S148/037; Y10S148/049; Y10S148/085; Y10S148/117; Y10S148/145
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
510 words
The method of forming a plurality of electrically isolated pockets of semiconductor material in a semiconductor structure comprising a silicon substrate of one conductivity type with an epitaxial silicon layer of opposite conductivity type thereon, which comprises the steps of: forming a low resistivity region of said opposite conductivity type in said substrate; growing a doped epitaxial silicon layer on said silicon substrate, said doped epitaxial silicon layer having a conductivity type relative to the conductivity type of at least a portion of the top surface of said substrate such that a laterally-extending PN junction is formed in at least part of said semiconductor structure, said low resistivity region being situated directly beneath the surface of said substrate on which said epitaxial layer is formed; forming a layer of insulation on said epitaxial silicon layer, said insulation having the properties that it is substantially unaffected by at least one etchant used to remove epitaxial silicon and substantially masks the diffusion of oxygen; removing portions of said insulation overlying regions of said epitaxial silicon layer to be converted into oxidized silicon; forming depressions to a specified depth in said epitaxial silicon exposed by removal of said insulation by removing part of said epitaxial silicon exposed by removal of said insulation; subdividing said epitaxial silicon layer into a plurality of electrically isolated pockets of semiconductor material by oxidizing the silicon exposed by said depressions to form oxidized silicon extending through said epitaxial silicon layer to said PN junction, the depth and shape of said depressions being selected such that the oxidized silicon has an upper surface substantially coplanar with the top surface of said epitaxial silicon layer and a bottom surface which extends through said epitaxial silicon layer to said PN junction, thereby both to surround each pocket by an annular-shaped region of oxidized silicon and to electrically isolate each pocket by an annular-shaped region of oxidized silicon and a portion of said laterally-extending PN junction said low resistivity region forming at least part of one electrically isolated pocket of semiconductor material; removing said layer of insulation after the epitaxial silicon exposed by said depressions is oxidized through to said PN junction; introducing an impurity of said opposite conductivity type into a selected region of epitaxial silicon of said opposite conductivity type the lateral extent of which is defined by a particular annular-shaped region of oxidized silicon, a portion of said particular annular-shaped region of oxidized silicon extending through said epitaxial layer to contact said low resistivity region; masking the surface of said epitaxial silicon layer to leave exposed the surface of another region of epitaxial silicon above said low resistivity region in said silicon substrate, said another region of epitaxial silicon being surrounded by another particular annular-shaped region of oxidized silicon, a portion of said another particular annular-shaped region of oxidized silicon extending through said epitaxial layer to contact said low resistivity region; and introducing an impurity of said one conductivity type into said another region of epitaxial silicon to a selected depth less than the thickness of said epitaxial layer.
Claim 2
Independent Claim
510 words
The method of forming a plurality of electrically isolated pockets of semiconductor material in a semiconductor structure comprising a silicon substrate of one conductivity type with an epitaxial silicon layer of opposite conductivity type thereon, which comprises the steps of: forming a low resistivity region of said opposite conductivity type in said substrate; growing a doped epitaxial silicon layer on said silicon substrate, said doped epitaxial silicon layer having a conductivity type relative to the conductivity type of at least a portion of the top surface of said substrate such that a laterally-extending PN junction is formed in at least part of said semiconductor structure, said low resistivity region being situated directly beneath the surface of said substrate on which said epitaxial layer is formed; forming a layer of insulation on said epitaxial silicon layer, said insulation having the properties that it is substantially unaffected by at least one etchant used to remove epitaxial silicon and substantially masks the diffusion of oxygen; removing portions of said insulation overlying regions of said epitaxial silicon layer to be converted into oxidized silicon; forming depressions to a specified depth in said epitaxial silicon exposed by removal of said insulation by removing part of said epitaxial silicon exposed by removal of said insulation; subdividing said epitaxial silicon layer into a plurality of electrically isolated pockets of semiconductor material by oxidizing the silicon exposed by said depressions to form oxidized silicon extending through said epitaxial silicon layer to said PN junction, the depth and shape of said depressions being selected such that the oxidized silicon has an upper surface substantially coplanar with the top surface of said epitaxial silicon layer and a bottom surface which extends through said epitaxial silicon layer to said PN junction, thereby both to surround each pocket by an annular-shaped region of oxidized silicon and to electrically isolate each pocket by an annular-shaped region of oxidized silicon and a portion of said laterally-extending PN junction said low resistivity region forming at least part of one electrically isolated pocket of semiconductor material; removing said layer of insulation after the epitaxial silicon exposed by said depressions is oxidized through to said PN junction; introducing an impurity of said opposite conductivity type into a selected region of epitaxial silicon of said opposite conductivity type the lateral extent of which is defined by a particular annular-shaped region of oxidized silicon, a portion of said particular annular-shaped region of oxidized silicon extending through said epitaxial layer to contact said low resistivity region; masking the surface of said epitaxial silicon layer to leave exposed the surface of another region of epitaxial silicon above said low resistivity region in said silicon substrate, said another region of epitaxial silicon being surrounded by another particular annular-shaped region of oxidized silicon, a portion of said another particular annular-shaped region of oxidized silicon extending through said epitaxial layer to contact said low resistivity region; and introducing an impurity of said one conductivity type into said another region of epitaxial silicon to a selected depth less than the thickness of said epitaxial layer.
Claim 3
Dependent Claim
76 words
The method of claim 1 including the additional steps of: masking a portion of the surface of said another region of epitaxial silicon into which said impurity of said one conductivity type has been introduced; and introducing an impurity of said opposite conductivity type into the unmasked portion of said surface of said another region of epitaxial silicon to a depth less than said selected depth to form a second region of said opposite conductivity type.
Claim 4
Dependent Claim
67 words
The method of claim 2 wherein said step of introducing an impurity of said opposite conductivity type into said another region of epitaxial silicon comprises the step of introducing an impurity of said opposite conductivity type into said another region of epitaxial silicon so as to form a second region of said opposite conductivity type abutting at least part of said another annular-shaped region of oxidized silicon.
Claim 5
Independent Claim
381 words
The method of forming a plurality of electrically isolated pockets of semiconductor material in a semiconductor structure comprising a silicon substrate of one conductivity type with an epitaxial silicon layer thereon of said one conductivity type which comprises the steps of: forming directly beneath portions of the top surface of said substrate low resistivity regions of opposite conductivity type to said one conductivity type, such that a laterally-extending PN junction is formed between said low resistivity regions and said silicon substrate; growing a doped epitaxial silicon layer of said one conductivity type on said silicon substrate; forming a layer of insulation on the top surface of said epitaxial silicon layer, said insulation having the properties that it is substantially unaffected by at least one etchant used to remove epitaxial silicon and substantially masks the diffusion of oxygen; removing portions of said insulation overlying regions of said epitaxial silicon layer to be converted into oxidized silicon; forming depressions to a specified depth in said epitaxial silicon exposed by removal of said insulation by removing part of said epitaxial silicon exposed by removal of said insulation; subdividing said epitaxial silicon layer into a plurality of electrically isolated pockets of semiconductor material by oxidizing the silicon exposed by said depressions to form oxidized silicon, said depth being selected such that the oxidized silicon has an upper surface approximately coplanar with the top surface of the remaining portions of said epitaxial layer and has a bottom surface in contact with said laterally extending PN junction thereby to surround each pocket of semiconductor material by an annular-shaped region of oxidized silicon; removing said layer of insulation after the silicon exposed by said depressions is oxidized through to said laterally extending PN junction; introducing an impurity of said one conductivity type into a selected region of said epitaxial silicon surrounded by an annular-shaped region of oxidized silicon to form a more highly doped region of said one conductivity type; masking said epitaxial silicon layer to leave exposed the surface of another region of epitaxial silicon above one of said low resistivity regions in said silicon substrate, said another region of epitaxial silicon being surrounded by another annular-shaped region of oxidized silicon; and introducing an impurity of said opposite conductivity type into said another region of epitaxial silicon.
Claim 6
Independent Claim
381 words
The method of forming a plurality of electrically isolated pockets of semiconductor material in a semiconductor structure comprising a silicon substrate of one conductivity type with an epitaxial silicon layer thereon of said one conductivity type which comprises the steps of: forming directly beneath portions of the top surface of said substrate low resistivity regions of opposite conductivity type to said one conductivity type, such that a laterally-extending PN junction is formed between said low resistivity regions and said silicon substrate; growing a doped epitaxial silicon layer of said one conductivity type on said silicon substrate; forming a layer of insulation on the top surface of said epitaxial silicon layer, said insulation having the properties that it is substantially unaffected by at least one etchant used to remove epitaxial silicon and substantially masks the diffusion of oxygen; removing portions of said insulation overlying regions of said epitaxial silicon layer to be converted into oxidized silicon; forming depressions to a specified depth in said epitaxial silicon exposed by removal of said insulation by removing part of said epitaxial silicon exposed by removal of said insulation; subdividing said epitaxial silicon layer into a plurality of electrically isolated pockets of semiconductor material by oxidizing the silicon exposed by said depressions to form oxidized silicon, said depth being selected such that the oxidized silicon has an upper surface approximately coplanar with the top surface of the remaining portions of said epitaxial layer and has a bottom surface in contact with said laterally extending PN junction thereby to surround each pocket of semiconductor material by an annular-shaped region of oxidized silicon; removing said layer of insulation after the silicon exposed by said depressions is oxidized through to said laterally extending PN junction; introducing an impurity of said one conductivity type into a selected region of said epitaxial silicon surrounded by an annular-shaped region of oxidized silicon to form a more highly doped region of said one conductivity type; masking said epitaxial silicon layer to leave exposed the surface of another region of epitaxial silicon above one of said low resistivity regions in said silicon substrate, said another region of epitaxial silicon being surrounded by another annular-shaped region of oxidized silicon; and introducing an impurity of said opposite conductivity type into said another region of epitaxial silicon.
Claim 7
Dependent Claim
49 words
The method of claim 4 wherein said impurity of said opposite conductivity type is introduced through said selected region of epitaxial silicon all the way to said low resistivity region in said silicon substrate, thereby to form an electrical contact to said low resistivity region in said silicon substrate.
Claim 8
Dependent Claim
307 words
A fabrication method comprising the steps of: creating a structure in which a doped epitaxial silicon layer is grown on a doped silicon semiconductor substrate predominantly of one conductivity type, the epitaxial layer being predominantly of opposite conductivity type to said one conductivity type such that a PN isolation junction extends laterally along at least part of the interface between the substrate and the epitaxial layer, and in which a low resistivity buried layer of said opposite conductivity type is provided along the interface between the substrate and the epitaxial layer; forming an insulation layer over the epitaxial layer, the insulation layer being substantially impervious to the penetration of oxygen; removing selected material of the insulation layer down to the epitaxial layer to create a pattern of one or more openings through the insulation layer; removing epitaxial silicon exposed through each opening to form a pattern of one or more depressions extending partway through the epitaxial layer; and subdividing the epitaxial layer into a plurality of laterally separated pockets of semiconductor material by thermally oxidizing silicon exposed at each depression to form a patterned electrically insulating region of oxidized silicon extending at least partway through the epitaxial layer, the insulating region extending down to the PN isolation junction such that each pocket of semiconductor material is laterally surrounded by oxidized silicon and is electrically isolated from each other pocket by surrounding oxidized silicon and a part of the PN isolation junction, the insulating region and the isolated pockets having largely co-planar upper surfaces, the low resistivity layer having been provided at such a location that the low resistivity layer forms part of a selected one of the isolated pockets of semiconductor material, the selected pocket including first and second epitaxial silicon portions laterally separated by oxidized silicon, both epitaxial portions being contiguous with the low resistivity layer.
Claim 9
Dependent Claim
307 words
A fabrication method comprising the steps of: creating a structure in which a doped epitaxial silicon layer is grown on a doped silicon semiconductor substrate predominantly of one conductivity type, the epitaxial layer being predominantly of opposite conductivity type to said one conductivity type such that a PN isolation junction extends laterally along at least part of the interface between the substrate and the epitaxial layer, and in which a low resistivity buried layer of said opposite conductivity type is provided along the interface between the substrate and the epitaxial layer; forming an insulation layer over the epitaxial layer, the insulation layer being substantially impervious to the penetration of oxygen; removing selected material of the insulation layer down to the epitaxial layer to create a pattern of one or more openings through the insulation layer; removing epitaxial silicon exposed through each opening to form a pattern of one or more depressions extending partway through the epitaxial layer; and subdividing the epitaxial layer into a plurality of laterally separated pockets of semiconductor material by thermally oxidizing silicon exposed at each depression to form a patterned electrically insulating region of oxidized silicon extending at least partway through the epitaxial layer, the insulating region extending down to the PN isolation junction such that each pocket of semiconductor material is laterally surrounded by oxidized silicon and is electrically isolated from each other pocket by surrounding oxidized silicon and a part of the PN isolation junction, the insulating region and the isolated pockets having largely co-planar upper surfaces, the low resistivity layer having been provided at such a location that the low resistivity layer forms part of a selected one of the isolated pockets of semiconductor material, the selected pocket including first and second epitaxial silicon portions laterally separated by oxidized silicon, both epitaxial portions being contiguous with the low resistivity layer.
Claim 10
Dependent Claim
24 words
A method as in claim 6 wherein the low resistivity layer meets the first and second epitaxial portions along substantially their entire lower surfaces.
Claim 11
Dependent Claim
31 words
A method as in claim 6 including the step of introducing an impurity of said opposite conductivity type into the first epitaxial portion to form a more heavily doped contact region.
Claim 12
Dependent Claim
59 words
A method as in claim 8 including the step of introducing an impurity of said one conductivity type into the second epitaxial portion to form a device region of said one conductivity type extending from the upper surface of the second epitaxial portion downward to a depth less than that of the underlying part of the low resistivity layer.
Claim 13
Dependent Claim
65 words
A method as in claim 9 including the step of introducing an impurity of said opposite conductivity type into part of the device region of said one conductivity type to form a device region of said opposite conductivity type extending from the upper surface of the second epitaxial portion downward to a depth less than that of the device region of said one conductivity type.
Claim 14
Dependent Claim
29 words
A method as in claim 10 wherein part of the lateral periphery of the device region of said opposite conductivity type abuts oxidized silicon surrounding the second epitaxial portion.
Claim 15
Dependent Claim
275 words
A fabrication method comprising the steps of: creating a structure in which a doped epitaxial silicon layer predominantly of one conductivity type is grown on a doped silicon substrate predominantly of said one conductivity type, laterally separated low resistivity buried layers of opposite conductivity type to said one conductivity type being provided in the structure along the interface between the substrate and the epitaxial layer so as to form a PN isolation junction between the substrate and the low resistivity layers; forming an insulation layer over the epitaxial layer, the insulation layer being substantially impervious to the penetration of oxygen; removing selected material of the insulation layer down to the epitaxial layer to create a pattern of one or more openings through the insulation layer; removing epitaxial silicon exposed through each opening to form a pattern of one or more depressions extending partway through the epitaxial layer; and subdividing the epitaxial layer into a plurality of laterally separated pockets of semiconductor material by thermally oxidizing silicon exposed at each depression to form a patterned electrically insulating region of oxidized silicon extending at least partway through the epitaxial layer, the insulating region extending down to the PN isolation junction such that each pocket of semiconductor material is laterally surrounded by oxidized silicon and is electrically isolated from each other pocket by surrounding oxidized silicon and a part of the PN isolation junction, the insulating region and the isolated pockets having largely co-planar upper surfaces, a selected one of the pockets including first and second epitaxial silicon portions laterally separated by oxidized silicon, both epitaxial portions being contiguous with a specified one of the low resistivity layers.
Claim 16
Dependent Claim
275 words
A fabrication method comprising the steps of: creating a structure in which a doped epitaxial silicon layer predominantly of one conductivity type is grown on a doped silicon substrate predominantly of said one conductivity type, laterally separated low resistivity buried layers of opposite conductivity type to said one conductivity type being provided in the structure along the interface between the substrate and the epitaxial layer so as to form a PN isolation junction between the substrate and the low resistivity layers; forming an insulation layer over the epitaxial layer, the insulation layer being substantially impervious to the penetration of oxygen; removing selected material of the insulation layer down to the epitaxial layer to create a pattern of one or more openings through the insulation layer; removing epitaxial silicon exposed through each opening to form a pattern of one or more depressions extending partway through the epitaxial layer; and subdividing the epitaxial layer into a plurality of laterally separated pockets of semiconductor material by thermally oxidizing silicon exposed at each depression to form a patterned electrically insulating region of oxidized silicon extending at least partway through the epitaxial layer, the insulating region extending down to the PN isolation junction such that each pocket of semiconductor material is laterally surrounded by oxidized silicon and is electrically isolated from each other pocket by surrounding oxidized silicon and a part of the PN isolation junction, the insulating region and the isolated pockets having largely co-planar upper surfaces, a selected one of the pockets including first and second epitaxial silicon portions laterally separated by oxidized silicon, both epitaxial portions being contiguous with a specified one of the low resistivity layers.
Claim 17
Dependent Claim
25 words
A method as in claim 12 wherein the specified low resistivity layer meets the first and second epitaxial portions along substantially their entire lower surfaces.
Claim 18
Dependent Claim
50 words
A method as in claim 13 including the step of introducing an impurity of said opposite conductivity type into the first epitaxial portion to form a contact region of the opposite conductivity type extending from the upper surface of the first epitaxial portion down to the specified low resistivity layer.
Claim 19
Dependent Claim
56 words
A method as in claim 14 including the step of introducing an impurity of said opposite conductivity type into the second epitaxial portion to form a device region of said opposite conductivity type extending from the upper surface of the second epitaxial portion downward to a depth less than that of the specified low resistivity layer.
Claim 20
Dependent Claim
29 words
A method as in claim 15 wherein part of the lateral periphery of the device region of said opposite conductivity type abuts oxidized silicon surrounding the second epitaxial portion.
Claim 21
Dependent Claim
45 words
A method as in claim 15 including the step of introducing an impurity of said one conductivity type into the second epitaxial portion to form a more heavily doped contact region at a location laterally separated from the device region of said opposite conductivity type.
References Cited (Backward Citations)
US28653A
Cited
CA861139A
Cited
US3025589A
Cited
US3064167A
Cited
US2981877A
Cited
US3150299A
Cited
US3117260A
Cited
US3189798A
Cited
US3136897A
Cited
US3210620A
Cited
US3156591A
Cited
US3241010A
Cited
US3210677A
Cited
US3296040A
Cited
US3513364A
Cited
US3260902A
Cited
US3290753A
Cited
US3341755A
Cited
US3598664A
Cited
US3391023A
Cited
US3386865A
Cited
US3442011A
Cited
US3615929A
Cited
US3370995A
Cited
US3511702A
Cited
US3404450A
Cited
US3404451A
Cited
US3489961A
Cited
GB1208576A
Cited
FR1549386A
Cited
NL6614016A
Cited
BE704674A
Cited
US3474308A
Cited
US3534234A
Cited
US3500139A
Cited
US3576683A
Cited
US3510735A
Cited
US3602982A
Cited
US3602981A
Cited
US3506502A
Cited
US3575740A
Cited
US3596149A
Cited
US3514846A
Cited
US3575741A
Cited
US3488564A
Cited
US3649386A
Cited
USRE28653E
Cited
US3550292A
Cited
NL6917558A
Cited
NL7011252A
Cited
US3640806A
Cited
DE2133976A1
Cited
FR2098324A1
Cited
NL7010204A
Cited
NL7013365A
Cited
US3736193A
Cited
GB1330790A
Cited
CA932475A
Cited
US3861968A
Cited
US3858231A
Cited
US4118728A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-25 | 2004-01-24 | 2004-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-25 | 2008-01-24 | 2008-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-25 | 2012-01-24 | 2012-07-25 | $7700.00 | Window Closed / Lapsed |