US3602981A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device and semiconductor device obtained by carrying out said method
Assignee: US Philips Corp
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Filing: 1968-04-17
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Granted: 1971-09-07
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Expires: 1988-04-17
Abstract
Abstract A method of making a monolithic semiconductor integrated circuit is described. On a thick silicon wafer is provided an oxidation mask in a desired pattern, and then the surface is thermally oxidized to sink into the silicon surface a sunken oxide pattern. Then impurities are introduced into the silicon surface regions to form PN junctions extending transversely to the surface. Next an insulating support is mounted on the wafer surface, and the backside is lapped or etched off until the sunken oxide pattern is reached forming silicon islands containing transverse PN junctions isolated by the silicon oxide.
Inventors
- 👤 Else Kooi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 07:33
CPC Classifications
H; H10; H10D; H10D86/00; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/117; Y10S148/15; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
37 words
A method as set forth in claim 1 wherein also prior to the silicon body being provided on the support, connections are provided on the silicon surface layer so as to contact zones in the silicon regions.
Claim 2
Dependent Claim
33 words
A method as set forth in claim 1 wherein conductive interconnections between various zones in the various silicon regions are provided on both sides of the silicon layer with the incorporated oxide pattern.
Claim 3
Dependent Claim
40 words
A method as set forth in claim 3 wherein one of the silicon regions is provided with a field-effect transistor of the type having an insulated gate with an insulated gate being provided on opposite sides of the silicon region.
References Cited (Backward Citations)
US2875505A
Cited
US3158788A
Cited
US3387358A
Cited
US3290753A
Cited
US3355636A
Cited
US3390022A
Cited
US3442011A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-06 | 1975-03-08 | 1975-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-06 | 1979-03-08 | 1979-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-06 | 1983-03-08 | 1983-09-07 | $7700.00 | Window Closed / Lapsed |