US3602982A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device and device manufactured by said method
Assignee: US Philips Corp
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Filing: 1968-04-17
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Granted: 1971-09-07
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Expires: 1988-04-17
Abstract
Abstract A method for making an integrated circuit with circuit elements dielectrically isolated is described. The method involves growing an epitaxial layer on a substrate, masking where desired the epitaxial layer surface against oxidation, and sinking a thermal oxide into the epitaxial layer. A support is then mounted on the epitaxial layer top and the substrate removed, for example, by electrolytic etching. Circuit elements are built into the dielectrically isolated semiconductor regions. The technique allows the provision of connections on both sides of the regions containing circuit elements.
Inventors
- 👤 Else Kooi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:52
CPC Classifications
H; H10; H10D; H10D86/00; H10D84/00; H10D84/01; H10D84/0112; H10D84/0119; H10D84/0121; H10D84/02; H10D84/03; H10D84/038; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W70/00; H10W70/60; H10W70/099; H10W74/00; H10W74/01; H10W74/019; H10W74/10; H10W74/131; H10W74/142; H10W90/00; H10W90/10; Y; Y10; Y10S; Y10S148/00; Y10S148/031; Y10S148/051; Y10S148/085; Y10S148/117; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
27 words
A method as set forth in claim 1 wherein the final body thickness is not more than 5 Mu m. and the masking layer comprises silicon nitride.
Claim 2
Dependent Claim
17 words
A method as set forth in claim 1 wherein the insulating support comprises polycrystalline silicon or polyvinylacetate.
Claim 3
Dependent Claim
19 words
A method as set forth in claim 1 wherein the substrate is removed by a treatment comprising electrolytical etching.
Claim 4
Dependent Claim
47 words
A method as set forth in claim 1 wherein prior to mounting of the body on a support, at least one metal track is provided on the surface of the body containing the silica pattern so as to connect to a circuit element in a silicon regions.
Claim 5
Dependent Claim
52 words
A method as set forth in claim 5 wherein subsequent to the material removing step, an opening is made in the silica pattern, a conductor is provided on the side of the body from which material was removed, and the conductor is connected to the metal track through the silica pattern opening.
Claim 6
Dependent Claim
43 words
A method as set forth in claim 1 wherein at least one metal track is provided on opposite sides of the final thickness of the silicon body so as to contact circuit elements in the silicon regions and extend over the silica pattern.
Claim 7
Dependent Claim
34 words
A method as set forth in claim 7 wherein metal layers are provided on opposite sides of a silicon region to form a capacitor, and the metal tracks are connected to the metal layers.
Claim 8
Dependent Claim
33 words
A method as set forth in claim 7 wherein two groups of crossing metal tracks are provided, one on each side of the final body, the crossings being located at the silicon regions.
References Cited (Backward Citations)
US3150299A
Cited
US3158788A
Cited
US3387358A
Cited
US3290753A
Cited
US3477886A
Cited
US3442011A
Cited
US3377513A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-09-06 | 1975-03-08 | 1975-09-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-09-06 | 1979-03-08 | 1979-09-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-09-06 | 1983-03-08 | 1983-09-07 | $7700.00 | Window Closed / Lapsed |