High frequency transistor and process for fabricating same
Abstract
Abstract AN INTEGRATED CIRCUIT IS PROVIDED WHEREIN A TRANSISTOR STRUCTURE IS COMPRISED OF A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL EMBEDDED IN A SUBSTRATE AND HAVING AN EXPOSED SURFACE SUBSTANTIALLY COPLANAR WITH A SUBSTRATE SURFACE. THE CRYSTAL IS ELECTRICALLY ISOLATED FROM THE SUBSTRATE BY A LAYER OF INSULATING OXIDE DISPOSED BETWEEN THE CRYSTAL AND THE SUBSTRATE. THE CRYSTAL IS DIVIDED INTO A COLLECTOR REGION, A BASE REGION AND AN EMITTER REGION WHICH ARE DISPOSED GENERALLY IN EDGE-TO-EDGE RELATIONSHIP. AN INSULATING FILM IS DISPOSED OVER THE SURFACE OF THE SUBSTRATE AND THE SURFACE OF THE CRYSTAL, AND METALLIC TERMINALS EXTEND THROUGH APERTURES IN THE INSULTING FILM INTO CONTACT WITH EACH OF THE ACTIVE REGIONS.
Inventors
- 👤 Jack S Kilby
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-09 | 1975-02-08 | 1975-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-09 | 1979-02-08 | 1979-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-09 | 1983-02-08 | 1983-08-10 | $7700.00 | Window Closed / Lapsed |