Epitaxially growing layers of semiconductor through openings in oxide mask

Claim 1

METHOD OF DEPOSITIING A LAYER O SEMICONDUCTOR MATERIAL BY EPITAXIAL GROWTH BY HALIDE DECOMPOSITION OVER A PORTION OF THE SURFACE OF A SEMICONDUCTOR SUBSTRATE WHILE LEAVING THE REMAINDER OF SAID SURFACE SUBSTANTIALLY FREE OF DEPOSITED SEMICONDUCTOR, WHICH COMPRISES: COVERING SAID REMAINDER OF SAID SURFACE WITH A SILICON OXIDE LAYER, AND EXPOSING SAID SURFACE TO A HALIDE DECOMPOSING EPITAXIAL GROWTH ATMOSPHERE AT A TEMPERATURE IN THE RANGE BETWEEN ABOUT 1100* AND 1428*C. THE ACT OF EXPOSING SAID SURFACE TO SAID ATOMOSPHERE BEING CONTROLLED BY A GAS FLOW RATE AND DEPOSTION TIME IN SAID TEMPERATURE RANGE FOR LEAVING A SUBSTANTIAL PORTION OF SAID OXIDE LAYER INTACT WHEN DEPOSTION IS COMPLETED, FOR OBTAINING A LAYER OF SEMICONDUCTOR DEPOSITED ON SAID PORTION OF SIAD SURFACE, AND FOR LEAVING THE SURFACE OF SAID INTACT OXIDE LAYER SUBSTANTIALLY FREE OF DEPOSITED SEMICONDUCTOR.