Patent US2259139A successfully refreshed from Google Patents.
US3089794A
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Fabrication of pn junctions by deposition followed by diffusion
Assignee: International Business Machines Corp
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Filing: 1959-06-30
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Granted: 1963-05-14
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Expires: 1979-06-30
Abstract
No abstract record available.
Inventors
- 👤 John C Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C30; C30B; C30B31/00; C30B31/02; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3438; H10P14/3441; H10P14/3442; H10P32/00; H10P32/10; H10P32/14; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/039; Y10S438/00; Y10S438/912
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
A METHOD OF PRODUCING A PN JUNCTION SEMICONDUCTOR STRUCTURE, COMPRISING THE STEPS OF: EPITAXIALLY DEPOSITING FROM THE VAPOR AN ADDITIONAL QUANTITY OF SEMICONDUCTOR MATERIAL, INCLUDING A PARTICULAR CONDUCTIVITY-TYPE DETERMINING IMPURITY, ONTO AN ORIGINAL, COMPATIBLE SEMICONDUCTOR SUBSTRATE, CONTAINING AN OPPOSITE CONDUCTIVITY-TYPE DETERMINING IMPURITY, SO AS TO FORM AT THE INTERFACE AN ABRUPT JUNCTION HAVING A SHARP CHANGE IN CONDUCTIVITY-TYPE IMPURITY CONCENTRATION FROM ONE SIDE OF THE JUNCTION TO THE OTHER; SUBJECTING THE COMBINATION OF THE DEPOSITED SEMICONDUCTOR MATERIAL AND THE SUBSTRATE SEMICONDUCTOR MATERIAL TO A HEATING OPERATION WHEREBY CONDUCTIVITYTYPE DETERMINING IMPURITIES IN SAID COMBINATION ARE CAUSED TO MOVE BY DEFUSION AND THE JUNCTION IS POSITIONED AT A LOCATION REMOED FROM THE ORGINAL INTERFACE BETWEEN SAID DEPOSITED SEMICONDUCOR MATERIAL AND SAID SUBSTRATE SEMICONDUCTOR MATERIAL
Claim 2
Independent Claim
122 words
A METHOD OF PRODUCING A PN JUNCTION SEMICONDUCTOR STRUCTURE, COMPRISING THE STEPS OF: EPITAXIALLY DEPOSITING FROM THE VAPOR AN ADDITIONAL QUANTITY OF SEMICONDUCTOR MATERIAL, INCLUDING A PARTICULAR CONDUCTIVITY-TYPE DETERMINING IMPURITY, ONTO AN ORIGINAL, COMPATIBLE SEMICONDUCTOR SUBSTRATE, CONTAINING AN OPPOSITE CONDUCTIVITY-TYPE DETERMINING IMPURITY, SO AS TO FORM AT THE INTERFACE AN ABRUPT JUNCTION HAVING A SHARP CHANGE IN CONDUCTIVITY-TYPE IMPURITY CONCENTRATION FROM ONE SIDE OF THE JUNCTION TO THE OTHER; SUBJECTING THE COMBINATION OF THE DEPOSITED SEMICONDUCTOR MATERIAL AND THE SUBSTRATE SEMICONDUCTOR MATERIAL TO A HEATING OPERATION WHEREBY CONDUCTIVITYTYPE DETERMINING IMPURITIES IN SAID COMBINATION ARE CAUSED TO MOVE BY DEFUSION AND THE JUNCTION IS POSITIONED AT A LOCATION REMOED FROM THE ORGINAL INTERFACE BETWEEN SAID DEPOSITED SEMICONDUCOR MATERIAL AND SAID SUBSTRATE SEMICONDUCTOR MATERIAL
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-05-13 | 1966-11-12 | 1967-05-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-05-13 | 1970-11-12 | 1971-05-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-05-13 | 1974-11-12 | 1975-05-14 | $7700.00 | Window Closed / Lapsed |