Process of making planar semiconductor devices isolated by encapsulating oxide filled channels

Claim 1

THE PROCESS OF PROVIDING AN ISOLATED PLANAR SEMICONDUCTOR DEVICE STRUCTURE COMPRISING THE STEPS OF PROVIDING A PROTECTIVE COATING ON A SUBSTRATE OF A FIRST CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL; OPENING APERTURES IN SAID COATING IN A CONFIGURATION SERVING TO ENCOMPASS FOR ISOLATION A DISCRETE PORTION OF A MAJOR SURFACE OF SAID SEMICONDUCTOR SUBSTRATE ON WHICH A SEMICONDUCTOR DEVICE IS TO BE FABRICATED; DIFFUSING A FIRST CONDUCTIVITY TYPE DETERMINING IMPURITY THROUGH SAID OPENINGS THEREBY CONVERTING PORTIONS OF SAID FIRST CONDUCTIVITY TYPE SUBSTRATE ADJACENT TO SAID OPENINGS TO A HIGHER FIRST CONDUCTIVITY TYPE REGION; PROVIDING A PROTECTIVE COATING OVER SAID REGIONS OF HIGHER CONDUCTIVITY TYPE ON SAID SUBSTRATE; EPITAXIALLY GROWING AT LEAST ONE OPPOSITE CONDUCTIVITY TYPE REGION ON SAID MAJOR SURFACE OF SAID SEMICONDUCTOR SUBSTRATE; PROVIDING AN ENCAPSULANT COATING OVER THE EPITAXIALLY GROWN AND PROTECTED PORTIONS OF SAID MAJOR SURFACE OF SAID SUBSTRATE; AND REMOVING SAID PROTECTIVE COATING DOWN TO THE EXPOSURE OF THE SURFACE OF SAID EPITAXIALLY GROWN SEMICONDUCTOR MATERIAL.