US3576683A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Transistor structure with thin, vaporgrown base layer
Assignee: Sony Corp
•
Filing: 1968-04-04
•
Granted: 1971-04-27
•
Expires: 1988-04-04
Abstract
Abstract BY THIS INVENTION ARE PROVIDED NEW AND IMPROVED SEMICONDUCTOR DEVICES, AND A METHOD OF MANUFACTURING THE SAME, IN WHICH THE BASE REGION OF THE SEMICONDUCTOR DEVICE IS CONSTITUTED BY AN EXTREMELY THIN, VAPOR-GROWN BASE LAYER WITH SIGNIFICANTLY ENHANCED CURRENT AMPLICFICATION HFE, AND BY A SUBSTANTIALLY THICKER BASE PORTION TO WHICH AN ELECTRICAL LEAD MAY BE READILY CONNECTED, AND IN WHICH THE SAID SEMICONDUCTOR DEVICES HAVE AT LEAST TWO SEMICONDUCTOR REGIONS THEREOF FORMED BY THE VAPOR GROWTH TECHNIQUE.
Inventors
- 👤 Osamu Matsubara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:13
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-04-26 | 1974-10-26 | 1975-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-04-26 | 1978-10-26 | 1979-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-04-26 | 1982-10-26 | 1983-04-27 | $7700.00 | Window Closed / Lapsed |