US3370995A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating electrically isolated semiconductor devices in integrated circuits
Assignee: Texas Instruments Inc
•
Filing: 1965-08-02
•
Granted: 1968-02-27
•
Expires: 1985-08-02
Abstract
No abstract record available.
Inventors
- 👤 Carl J Lowery
- 👤 Billy B Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:18
CPC Classifications
C; C23; C23F; C23F1/00; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/031; H10W10/10; H10W10/30; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/043; Y10S148/049; Y10S148/05; Y10S148/051; Y10S148/085; Y10S148/115; Y10S148/122
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
138 words
THE PROCESS FOR FABRICATING SEMICONDUCTOR COMPONENTS IN INTEGRATED CIRCUIT FORM WHICH COMPRISES: FORMING A MASKING LAYER OVER ONE SURGACE OF A SEMICONDUCTOR SUBSTRATE AHVING AN APERTURE EXPOSING THE SUBSTRATE, SUBJECTING THE SUBSTRATE TO A FLUID ETCHANT FOR ETCHING ONLY THE SUBSTRATE AND NOT THE MASKING LAYER TO FORM A CAVITY IN THE SUBSTRATE, THE POCKET EXTENDING UNDER THE MASKING LAYER TO LEAVE AN OVERHANGING PORTION OF THE MASKING LAYER AROUND THE PERIPHERY OF THE CAVITY, AND REFORMING THE SUBSTRATE IN THE CAVITY BY TWO SUCCESSIVE VAPOR DEPOSITION STEPS TO FORM FIRST AND SECOND SEMICONDUCTOR LAYERS, THE FIRST LAYER UNDERLYILNG THE SECOND AND EXTENDING TO THE SURFACE OF THE SUBSTRATE AROUND AT LEAST A PORTION OF THE PERIPHERY OF THE SECOND LAYER SUCH THAT THE EDGE OF THE FIRST LAYER WILL BE EXPOSED UPON REMOVAL OF THE MASKING LAYER.
Claim 2
Dependent Claim
138 words
THE PROCESS FOR FABRICATING SEMICONDUCTOR COMPONENTS IN INTEGRATED CIRCUIT FORM WHICH COMPRISES: FORMING A MASKING LAYER OVER ONE SURGACE OF A SEMICONDUCTOR SUBSTRATE AHVING AN APERTURE EXPOSING THE SUBSTRATE, SUBJECTING THE SUBSTRATE TO A FLUID ETCHANT FOR ETCHING ONLY THE SUBSTRATE AND NOT THE MASKING LAYER TO FORM A CAVITY IN THE SUBSTRATE, THE POCKET EXTENDING UNDER THE MASKING LAYER TO LEAVE AN OVERHANGING PORTION OF THE MASKING LAYER AROUND THE PERIPHERY OF THE CAVITY, AND REFORMING THE SUBSTRATE IN THE CAVITY BY TWO SUCCESSIVE VAPOR DEPOSITION STEPS TO FORM FIRST AND SECOND SEMICONDUCTOR LAYERS, THE FIRST LAYER UNDERLYILNG THE SECOND AND EXTENDING TO THE SURFACE OF THE SUBSTRATE AROUND AT LEAST A PORTION OF THE PERIPHERY OF THE SECOND LAYER SUCH THAT THE EDGE OF THE FIRST LAYER WILL BE EXPOSED UPON REMOVAL OF THE MASKING LAYER.
References Cited (Backward Citations)
US2921362A
Cited
US2854366A
Cited
US3083441A
Cited
US3000768A
Cited
US3193418A
Cited
US3244555A
Cited
US3243323A
Cited
US3171762A
Cited
US3278347A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-02-26 | 1971-08-28 | 1972-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-02-26 | 1975-08-28 | 1976-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-02-26 | 1979-08-28 | 1980-02-27 | $7700.00 | Window Closed / Lapsed |