Method for fabricating electrically isolated semiconductor devices in integrated circuits

Claim 1

THE PROCESS FOR FABRICATING SEMICONDUCTOR COMPONENTS IN INTEGRATED CIRCUIT FORM WHICH COMPRISES: FORMING A MASKING LAYER OVER ONE SURGACE OF A SEMICONDUCTOR SUBSTRATE AHVING AN APERTURE EXPOSING THE SUBSTRATE, SUBJECTING THE SUBSTRATE TO A FLUID ETCHANT FOR ETCHING ONLY THE SUBSTRATE AND NOT THE MASKING LAYER TO FORM A CAVITY IN THE SUBSTRATE, THE POCKET EXTENDING UNDER THE MASKING LAYER TO LEAVE AN OVERHANGING PORTION OF THE MASKING LAYER AROUND THE PERIPHERY OF THE CAVITY, AND REFORMING THE SUBSTRATE IN THE CAVITY BY TWO SUCCESSIVE VAPOR DEPOSITION STEPS TO FORM FIRST AND SECOND SEMICONDUCTOR LAYERS, THE FIRST LAYER UNDERLYILNG THE SECOND AND EXTENDING TO THE SURFACE OF THE SUBSTRATE AROUND AT LEAST A PORTION OF THE PERIPHERY OF THE SECOND LAYER SUCH THAT THE EDGE OF THE FIRST LAYER WILL BE EXPOSED UPON REMOVAL OF THE MASKING LAYER.