Patent US5769847A successfully refreshed from Google Patents.
US2854366A
Expired / Lapsed
US
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Method of making fused junction semiconductor devices
Assignee: Raytheon Co
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Filing: 1957-11-25
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Granted: 1958-09-30
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Expires: 1977-11-25
Abstract
No abstract record available.
Inventors
- 👤 Jr Arthur L Wannlund
- 👤 Warren P Waters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 20:43
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P52/00; Y; Y10; Y10S; Y10S438/00; Y10S438/965; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
140 words
THE METHOD OF PRODUCING, DEFINING AND POSITIONING AN INTEGRAL REGROWN CRYSTAL REGION OF ONE CONDUCTIVITY TYPE IN A SEMICONDUCTOR CRYSTAL BODY HAVING A PREDETERMINED CONDUCTIVITY TYPE COMPRISING: FORMING A CAVITY IN THE SURFACE OF SAID SEMICONDUCTOR BODY, SAID CAVITY HAVING A CONFIGURATION SIMILAR TO THE CONFIGURATION OF THE REGROWN CRYSTAL REGION TO BE FORMED; DEPOSITION A MOLTEN LAYER OF SOLVENT METAL INCLUDING AN ACTIVE IMPURITY IN SAID CAVITY SUFFICIENT TO COMPLETELY WET THE SURFACES OF SAID CAVITY, SAID SEMICONDUCTOR BODY BEING AT A TEMPERATURE ABOVE THE EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL; AND COOLING SAID SEMICONDUCTOR BODY TO CAUSE THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE, TOGETHER WITH SOME ATOMS OF SAID ACTIVE IMPURITY, UPON SAID SURFACES OF SAID CAVITY, WHEREBY A P-N JUNCTION HAVING SUBSTANTIALLY THE CONFIGURATION OF SAID CAVITY IS FORMED WITHIN SAID SEMICONDUCTOR BODY.
Claim 2
Independent Claim
140 words
THE METHOD OF PRODUCING, DEFINING AND POSITIONING AN INTEGRAL REGROWN CRYSTAL REGION OF ONE CONDUCTIVITY TYPE IN A SEMICONDUCTOR CRYSTAL BODY HAVING A PREDETERMINED CONDUCTIVITY TYPE COMPRISING: FORMING A CAVITY IN THE SURFACE OF SAID SEMICONDUCTOR BODY, SAID CAVITY HAVING A CONFIGURATION SIMILAR TO THE CONFIGURATION OF THE REGROWN CRYSTAL REGION TO BE FORMED; DEPOSITION A MOLTEN LAYER OF SOLVENT METAL INCLUDING AN ACTIVE IMPURITY IN SAID CAVITY SUFFICIENT TO COMPLETELY WET THE SURFACES OF SAID CAVITY, SAID SEMICONDUCTOR BODY BEING AT A TEMPERATURE ABOVE THE EUTECTIC TEMPERATURE OF SAID SOLVENT METAL AND SAID SEMICONDUCTOR MATERIAL; AND COOLING SAID SEMICONDUCTOR BODY TO CAUSE THE DISSOLVED SEMICONDUCTOR MATERIAL TO PRECIPITATE, TOGETHER WITH SOME ATOMS OF SAID ACTIVE IMPURITY, UPON SAID SURFACES OF SAID CAVITY, WHEREBY A P-N JUNCTION HAVING SUBSTANTIALLY THE CONFIGURATION OF SAID CAVITY IS FORMED WITHIN SAID SEMICONDUCTOR BODY.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-09-29 | 1962-03-31 | 1962-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-09-29 | 1966-03-31 | 1966-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-09-29 | 1970-03-31 | 1970-09-30 | $7700.00 | Window Closed / Lapsed |