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US5838530A Expired / Lapsed US ⏱️ 0.0 years remaining

Applications of protective ceramics

Assignee: Individual
•
Filing: 1996-10-17
•
Granted: 1998-11-17
•
Expires: 2016-10-17
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Abstract

Abstract It is beneficial for an FPGA, PROM, DRAM and superconductive circuit to use a protective ceramic as its insulating material. This protective ceramic can densely cover metal surface and is free of defects. As a result, a high yield can be ensured. The Pilling-Bedworth ratio is a good indicator of the protective nature of an insulating material. It is desirable to limit the Pilling-Bedworth ratio larger than 1 and preferably smaller than 2. Multiple layers of ceramics can be used to further reduce the defect density and improve yield.

Inventors

  • 👤 Guobiao Zhang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 20:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10D; H10D1/00; H10D1/60; H10D1/68; H10N; H10N60/00; H10N60/10; H10N60/12; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6316; H10P14/6319; H10P14/6322; H10P14/6324; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393; H10P14/69394; H10P14/69395; H10P14/69397

Claims Analysis

Total Claims: 27
Claim 1
Independent Claim 90 words
A capacitor-like device in an integrated circuit comprising a first bottom electrode, said first bottom electrode comprising conductive materials, said first bottom electrode having a top surface; a second top electrode, said second top electrode comprising conductive materials; an insulating layer interposed between said first bottom electrode and said second top electrode, said insulating layer comprising at least one layer of a protective ceramic which is a compound of at least one metallic element and at least one non-metallic element from a group consisting of C, N, O, P, S.
Claim 2
Dependent Claim 90 words
A capacitor-like device in an integrated circuit comprising a first bottom electrode, said first bottom electrode comprising conductive materials, said first bottom electrode having a top surface; a second top electrode, said second top electrode comprising conductive materials; an insulating layer interposed between said first bottom electrode and said second top electrode, said insulating layer comprising at least one layer of a protective ceramic which is a compound of at least one metallic element and at least one non-metallic element from a group consisting of C, N, O, P, S.
Claim 3
Dependent Claim 17 words
The capacitor-like device of claim 1, wherein said protective ceramic has a Piling-Bedworth ratio larger than 1.
Claim 4
Dependent Claim 17 words
The capacitor-like device of claim 2, wherein said protective ceramic has a Pilling-Bedworth ratio smaller than 2.
Claim 5
Dependent Claim 15 words
The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal oxide.
Claim 6
Dependent Claim 43 words
The capacitor-like device of claim 4, wherein said protective metal oxide is an oxide of at least one element from a group including Be, Cu, Al, Cr, Mn, Fe, Co, Ni, Pd, Pb, Ce, Sc, Zn, Zr, La, Y, Nb, Rh and Pt.
Claim 7
Dependent Claim 15 words
The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal nitride.
Claim 8
Dependent Claim 35 words
The capacitor-like device of claim 6, wherein said protective metal nitride is a nitride of at least one element from a group including Ti, V, Cr, Fe, Cu, Zn, Zr, Nb, Ta, Al and Ge.
Claim 9
Dependent Claim 15 words
The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal carbide.
Claim 10
Dependent Claim 40 words
The capacitor-like device of claim 8, wherein said protective metal carbide is a carbide of at least one element from a group including Ti, Si, V, Cr, Mn, Fe, Ni, Y, Zr, Nb, Mo, La, Hf, Ta, W and Al.
Claim 11
Dependent Claim 15 words
The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal phosphide.
Claim 12
Dependent Claim 31 words
The capacitor-like device of claim 10, wherein said protective metal phosphide is a phosphide of at least one element from a group including Ti, Fe, Co, Ni, Cu, Cd and Sn.
Claim 13
Dependent Claim 15 words
The capacitor-like device of claim 1, wherein said protective ceramic comprises a protective metal sulfide.
Claim 14
Dependent Claim 31 words
The capacitor-like device of claim 12, wherein said protective metal sulfide is a sulfide of at least one element from a group including Cu, Ag, I, Sn, Tl, Pb and Bi.
Claim 15
Dependent Claim 73 words
The capacitor-like device of claim 22, wherein: said top surface of said first bottom electrode comprises at least one metallic element, said metallic element being a metallic component of said protective ceramic; at least one portion of said protective ceramic is formed by a growing means, whereby at least one non-metallic element from a group consisting of C, N, O, P, S is incorporated into said top surface of said first bottom electrode.
Claim 16
Dependent Claim 52 words
The capacitor-like device of claim 1, wherein: said protective ceramic is a protective metal oxide; said top surface of said first bottom electrode comprises at least one element from a group including Be, Cu, Al, Cr, Mn, Fe, Co, Ni, Pd, Pb, Ce, Sc, Zn, Zr, La, Y, Nb, Rh and Pt.
Claim 17
Dependent Claim 44 words
The capacitor-like device of claim 14, wherein: said protective ceramic is a protective metal nitride; said top surface of said first bottom electrode comprising at least one element from a group including Ti, V, Cr, Fe, Cu, Zn, Zr, Nb, Ta, Al and Ge.
Claim 18
Dependent Claim 22 words
The capacitor-like device of claim 14, wherein: said growing means includes thermal oxidation, thermal nitridation, plasma oxidation, plasma nitridation, anodization, and implantation.
Claim 19
Dependent Claim 30 words
The capacitor-like device of claim 1, wherein: at least one portion of said protective ceramic is formed by a depositing means above said top surface of said first bottom electrode.
Claim 20
Dependent Claim 19 words
The capacitor-like device of claim 18, wherein: said depositing means includes direct sputtering, reactive sputtering and chemical vapor deposition.
Claim 21
Dependent Claim 21 words
The capacitor-like device of claim 1, wherein: at least one portion of said bottom electrode is formed by an evaporating means.
Claim 22
Dependent Claim 14 words
The capacitor-like device of claim 1, wherein said protective ceramic has a polycrystalline structure.
Claim 23
Dependent Claim 14 words
The capacitor-like device of claim 1, wherein said protective ceramic has an amorphous structure.
Claim 24
Dependent Claim 17 words
The capacitor-like device of claim 1 further being an antifuse for applications including FPGA and PROM applications.
Claim 25
Dependent Claim 26 words
The capacitor-like device of claim 1 further being a capacitor, whereby electrical charge can be accumulated on at least one of said first and second electrodes.
Claim 26
Dependent Claim 14 words
The capacitor of claim 24 further being a storage capacitor for applications including DRAM.
Claim 27
Dependent Claim 16 words
The capacitor-like device of claim 1 further being a Josephson Junction for applications including superconductive circuit.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-11-16 2002-05-18 2002-11-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-11-16 2006-05-18 2006-11-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-11-16 2010-05-18 2010-11-17 $7700.00 Window Closed / Lapsed

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