Patent US5793076A successfully refreshed from Google Patents.
US5793076A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Scalable high dielectric constant capacitor
Assignee: Round Rock Research LLC
•
Filing: 1995-09-21
•
Granted: 1998-08-11
•
Expires: 2015-09-21
Abstract
Abstract A capacitor for high density DRAM applications comprises a high-ε capacitor dielectric such as BST or PZT in an arrangement which obviates the need for barrier layers during fabrication. The fabrication process allows for electrode placement by simple sputter deposition and further provides for the possibility of capacitor spacing below that of conventional lithographic techniques.
Inventors
- 👤 Pierre C. Fazan
- 👤 Paul Schuele
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:50
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
62 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode comprises a conductive oxide.
Claim 2
Dependent Claim
62 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode comprises a conductive oxide.
Claim 3
Dependent Claim
15 words
The thin film capacitor of claim 1, wherein the conductive oxide comprises RuO 2 .
Claim 4
Dependent Claim
65 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the dielectric layer has a dielectric constant greater than 100.
Claim 5
Dependent Claim
65 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the dielectric layer has a dielectric constant greater than 100.
Claim 6
Dependent Claim
31 words
The thin film capacitor of claim 3, wherein the dielectric layer comprises a material selected from the group consisting of barium titanate, strontium titanate, barium strontium titanate and lead zirconate titanate.
Claim 7
Dependent Claim
64 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode is comprised of a single metal.
Claim 8
Dependent Claim
64 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode is comprised of a single metal.
Claim 9
Dependent Claim
62 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode is comprised of platinum.
Claim 10
Dependent Claim
62 words
A thin film capacitor in an integrated circuit comprising: an inner electrode having an outer side wall and a top surface, said inner electrode electrically connected to a silicon substrate; a dielectric layer surrounding the outer side wall without overlying the inner electrode top surface; and an outer electrode adjacent to the dielectric layer, wherein the outer electrode is comprised of platinum.
Claim 11
Dependent Claim
83 words
A capacitor in an integrated circuit, comprising: a reference electrode layer having a via therein, the via defining a conductive container; a dielectric layer lining the conductive container, the dielectric layer defining a dielectric container; and a storage electrode layer lining the dielectric container and extending through a bottom of the dielectric container to electrically communicate with a semiconductor substrate, wherein the storage electrode fills the dielectric container, wherein the dielectric layer comprises a material having a dielectric constant greater than about 100.
Claim 12
Dependent Claim
83 words
A capacitor in an integrated circuit, comprising: a reference electrode layer having a via therein, the via defining a conductive container; a dielectric layer lining the conductive container, the dielectric layer defining a dielectric container; and a storage electrode layer lining the dielectric container and extending through a bottom of the dielectric container to electrically communicate with a semiconductor substrate, wherein the storage electrode fills the dielectric container, wherein the dielectric layer comprises a material having a dielectric constant greater than about 100.
Claim 13
Dependent Claim
74 words
An integrated circuit comprising: a conductive layer having a plurality of vias formed therethrough; a plurality of dielectric layers, each of the dielectric layers lining one of the vias and having an opening at the bottom thereof; and a plurality of storage electrodes, each of the storage electrodes directly contacting one of the dielectric layers within the vias and extending through the opening at the bottom thereof to electrically contact a semiconductor active area.
Claim 14
Dependent Claim
74 words
An integrated circuit comprising: a conductive layer having a plurality of vias formed therethrough; a plurality of dielectric layers, each of the dielectric layers lining one of the vias and having an opening at the bottom thereof; and a plurality of storage electrodes, each of the storage electrodes directly contacting one of the dielectric layers within the vias and extending through the opening at the bottom thereof to electrically contact a semiconductor active area.
Claim 15
Dependent Claim
25 words
The integrated circuit of claim 8, wherein each of the vias is filled by one of the dielectric layers and one of the storage electrodes.
Claim 16
Dependent Claim
19 words
The integrated circuit of claim 8, wherein each of the dielectric layers has a dielectric constant greater than 100.
Claim 17
Dependent Claim
14 words
The integrated circuit of claim 8, wherein the conductive layer comprises a conductive oxide.
Claim 18
Dependent Claim
12 words
The integrated circuit of claim 8, wherein the conductive layer comprises titanium.
References Cited (Backward Citations)
US4145803A
Cited
US4481283A
Cited
US4890191A
Cited
US5099305A
Cited
US5053917A
Cited
US5227855A
Cited
JPH04212449A
Cited
US5241201A
Cited
US5293510A
Cited
US5369296A
Cited
US5037773A
Cited
US5182232A
Cited
US5138411A
Cited
US5495117A
Cited
US5349494A
Cited
US5612082A
Cited
US5187638A
Cited
JPH0661422A
Cited
US5366920A
Cited
US5278091A
Cited
US5443688A
Cited
US5429972A
Cited
US5418180A
Cited
US5444013A
Cited
US5555486A
Cited
US5595928A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |