US5099305A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Platinum capacitor mos memory having lattice matched pzt
Assignee: Seiko Epson Corp
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Filing: 1991-05-30
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Granted: 1992-03-24
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Expires: 2011-05-30
Abstract
Abstract Non-volatile memories each employing a ferroelectric capacitor composed of a ferroelectric film formed on a diffused layer serving as a source or a drain. A lower electrode is composed mainly of a metal, while the ferroelectric film is connected to a high-concentration diffused layer at a contact hole. Formed on the high-concentration diffused layer is a refractory metal silicide on which to form the ferroelectric substance film.
Inventors
- 👤 Kazuhiro Takenaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:51
CPC Classifications
H; H10; H10B; H10B53/00; H10B51/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
234 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region layer of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having a side wall, and a body of insulating material on said gate electrode side wall and contacting said substrate surface, with one of said drain region and said source region being constituted by said at least one diffused region; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region layer is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a metal layer of Pt formed directly on said diffused region portion.
Claim 2
Dependent Claim
234 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region layer of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having a side wall, and a body of insulating material on said gate electrode side wall and contacting said substrate surface, with one of said drain region and said source region being constituted by said at least one diffused region; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region layer is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a metal layer of Pt formed directly on said diffused region portion.
Claim 3
Dependent Claim
231 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having a side wall, and a body of insulating material on said gate electrode side wall and contacting said substrate surface, with one of said drain region and said source region being constituted by said at least one diffused region; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a refractory Pt silicide layer formed directly on said diffused region portion.
Claim 4
Dependent Claim
231 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having a side wall, and a body of insulating material on said gate electrode side wall and contacting said substrate surface, with one of said drain region and said source region being constituted by said at least one diffused region; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a refractory Pt silicide layer formed directly on said diffused region portion.
Claim 5
Dependent Claim
235 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said exposed surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having side walls, an insulating film disposed on said gate electrode to have the same configuration as said gate electrode, and a body of insulating material disposed on said insulating film adjacent said gate electrode side walls and contacting said substrate surface; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a metal layer of Pt formed directly on said diffused region portion.
Claim 6
Dependent Claim
235 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said exposed surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having side walls, an insulating film disposed on said gate electrode to have the same configuration as said gate electrode, and a body of insulating material disposed on said insulating film adjacent said gate electrode side walls and contacting said substrate surface; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a metal layer of Pt formed directly on said diffused region portion.
Claim 7
Dependent Claim
235 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said exposed surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having side walls, an insulating film disposed on said gate electrode to have the same configuration as said gate electrode, and a body of insulating material disposed on said insulating film adjacent said gate electrode side walls and contacting said substrate surface; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a refractory Pt silicide layer formed directly on said diffused region portion.
Claim 8
Dependent Claim
235 words
A ferroelectric memory device comprising: a semiconductor substrate having a surface and an element forming region of a first conductivity type said substrate being provided with an insulating layer formed on said exposed surface and constituting an isolating region surrounding said element forming region of said substrate, said substrate being further provided with at least one impurity diffused region of a second conductivity type opposite to the first conductivity type located in said element forming region and extending into said substrate from said surface; an MOS transistor formed in said element forming region of said substrate and including a source region of the second conductivity type, a drain region of the second conductivity type, a gate electrode having side walls, an insulating film disposed on said gate electrode to have the same configuration as said gate electrode, and a body of insulating material disposed on said insulating film adjacent said gate electrode side walls and contacting said substrate surface; and a ferroelectric capacitor formed on said substrate in said element forming region together with said transistor and comprising capacitor electrodes and a ferroelectric film of PZT sandwiched between said capacitor electrodes; wherein a portion of said diffused region is bordered, at said substrate surface, by said element isolating region and said body of insulating material, and wherein one of said capacitor electrodes comprises a refractory Pt silicide layer formed directly on said diffused region portion.
Claim 9
Dependent Claim
59 words
A semiconductor device comprising: an MOS transistor having a source region and a drain region; and a ferroelectric capacitor electrically connected to one of said regions, said capacitor comprising a Pt silicide layer disposed on said one of said regions, a ferroelectric film of PZT disposed on said metal silicide layer and an electrode disposed on said ferroelectric film.
Claim 10
Dependent Claim
59 words
A semiconductor device comprising: an MOS transistor having a source region and a drain region; and a ferroelectric capacitor electrically connected to one of said regions, said capacitor comprising a Pt silicide layer disposed on said one of said regions, a ferroelectric film of PZT disposed on said metal silicide layer and an electrode disposed on said ferroelectric film.
Claim 11
Dependent Claim
59 words
A semiconductor device comprising: an MOS transistor having a source region and a drain region; and a ferroelectric capacitor electrically connected to one of said regions, said capacitor comprising a metal layer of Pt disposed on said one of said regions, a ferroelectric film of PZT disposed on said metal layer and an electrode disposed on said ferroelectric film.
Claim 12
Dependent Claim
59 words
A semiconductor device comprising: an MOS transistor having a source region and a drain region; and a ferroelectric capacitor electrically connected to one of said regions, said capacitor comprising a metal layer of Pt disposed on said one of said regions, a ferroelectric film of PZT disposed on said metal layer and an electrode disposed on said ferroelectric film.
References Cited (Backward Citations)
US3832700A
Cited
US4167018A
Cited
US4149302A
Cited
JPS57180182A
Cited
JPS57206068A
Cited
US4931847A
Cited
US4873664A
Cited
US4888630A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |