US5747855A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CMOS integrated circuitry with Halo and LDD regions
Assignee: Round Rock Research LLC
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Filing: 1997-01-14
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Granted: 1998-05-05
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Expires: 2017-01-14
Abstract
Abstract A method of forming CMOS integrated circuitry includes, a) providing a series of gate lines over a semiconductor substrate, a first gate line being positioned relative to an area of the substrate for formation of an NMOS transistor, a second gate line being positioned relative to an area of the substrate for formation of a PMOS transistor; b) masking the second gate line and the PMOS substrate area while conducting a p-type halo ion implant into the NMOS substrate area adjacent the first gate line, the p-type halo ion implant being conducted at a first energy level to provide a p-type first impurity concentration at a first depth within the NMOS substrate area; and c) in a common step, blanket ion implanting phosphorus into both the NMOS substrate area and the PMOS substrate area adjacent the first and the second gate lines to form both NMOS LDD regions and PMOS n-type halo regions, respectively, the phosphorus implant being conducted at a second energy level to provide an n-type second impurity concentration at a second depth within both the PMOS substrate area and the NMOS substrate area, the first energy level and the first depth being greater than the second energy level and the second depth, respectively. Methods of forming memory and other CMOS integrated circuitry are also disclosed involving optimization of different NMOS transistors.
Inventors
- 👤 Charles H. Dennison
- 👤 Mark Helm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:22
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D84/8311; H10D84/8312
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
148 words
CMOS circuitry formed on a semiconductor substrate, the CMOS circuitry comprising: an NMOS transistor device comprising: an NMOS transistor gate over said semiconductor substrate, NMOS halo regions within the semiconductor substrate, the NMOS halo regions extending to an NMOS halo region depth within the semiconductor substrate; NMOS first LDD regions within the semiconductor substrate, the NMOS first LDD regions extending to an NMOS first LDD region depth within the semiconductor substrate; NMOS second LDD regions within the semiconductor substrate, the NMOS second LDD regions extending to an NMOS second LDD region depth within the semiconductor substrate, and a PMOS transistor device comprising: a PMOS transistor gate over the semiconductor substrate; and PMOS halo regions within the semiconductor substrate, the PMOS halo regions extending to a PMOS halo region depth within the semiconductor substrate, the PMOS halo region depth being generally equal to the NMOS first LDD region depth.
Claim 2
Dependent Claim
148 words
CMOS circuitry formed on a semiconductor substrate, the CMOS circuitry comprising: an NMOS transistor device comprising: an NMOS transistor gate over said semiconductor substrate, NMOS halo regions within the semiconductor substrate, the NMOS halo regions extending to an NMOS halo region depth within the semiconductor substrate; NMOS first LDD regions within the semiconductor substrate, the NMOS first LDD regions extending to an NMOS first LDD region depth within the semiconductor substrate; NMOS second LDD regions within the semiconductor substrate, the NMOS second LDD regions extending to an NMOS second LDD region depth within the semiconductor substrate, and a PMOS transistor device comprising: a PMOS transistor gate over the semiconductor substrate; and PMOS halo regions within the semiconductor substrate, the PMOS halo regions extending to a PMOS halo region depth within the semiconductor substrate, the PMOS halo region depth being generally equal to the NMOS first LDD region depth.
Claim 3
Dependent Claim
19 words
The CMOS circuitry of claim 1 wherein the PMOS halo regions and the NMOS first LDD regions comprise phosphorus.
Claim 4
Dependent Claim
215 words
Integrated circuitry formed on a semiconductor substrate, the integrated circuitry comprising: a first NMOS transistor device comprising: a first NMOS transistor gate over said semiconductor substrate; first NMOS halo regions within the semiconductor substrate, the first NMOS halo regions extending to a first NMOS halo region depth within the semiconductor substrate; first NMOS first LDD regions within the semiconductor substrate, the first NMOS first LDD regions extending to a first NMOS first LDD region depth within the semiconductor substrate; and first NMOS second LDD regions within the semiconductor substrate, the first NMOS second LDD regions extending to a first NMOS second LDD region depth within the semiconductor substrate; a PMOS transistor device comprising: a PMOS transistor gate over the semiconductor substrate; and PMOS halo regions within the semiconductor substrate, the PMOS halo regions extending to a PMOS halo region depth within the semiconductor substrate; a second NMOS transistor device comprising: a second NMOS transistor gate over said semiconductor substrate; second NMOS source/drain regions within the semiconductor substrate, the second NMOS source/drain regions extending to a second NMOS source/drain region depth within the semiconductor substrate; and wherein the PMOS halo region depth is generally equal to the second NMOS source/drain region depth which in turn is generally equal to the first NMOS first LDD region depth.
Claim 5
Dependent Claim
215 words
Integrated circuitry formed on a semiconductor substrate, the integrated circuitry comprising: a first NMOS transistor device comprising: a first NMOS transistor gate over said semiconductor substrate; first NMOS halo regions within the semiconductor substrate, the first NMOS halo regions extending to a first NMOS halo region depth within the semiconductor substrate; first NMOS first LDD regions within the semiconductor substrate, the first NMOS first LDD regions extending to a first NMOS first LDD region depth within the semiconductor substrate; and first NMOS second LDD regions within the semiconductor substrate, the first NMOS second LDD regions extending to a first NMOS second LDD region depth within the semiconductor substrate; a PMOS transistor device comprising: a PMOS transistor gate over the semiconductor substrate; and PMOS halo regions within the semiconductor substrate, the PMOS halo regions extending to a PMOS halo region depth within the semiconductor substrate; a second NMOS transistor device comprising: a second NMOS transistor gate over said semiconductor substrate; second NMOS source/drain regions within the semiconductor substrate, the second NMOS source/drain regions extending to a second NMOS source/drain region depth within the semiconductor substrate; and wherein the PMOS halo region depth is generally equal to the second NMOS source/drain region depth which in turn is generally equal to the first NMOS first LDD region depth.
Claim 6
Dependent Claim
24 words
The integrated circuitry of claim 3 wherein the PMOS halo regions, second NMOS source/drain regions, and the first NMOS first LDD regions comprise phosphorus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-04 | 2009-11-03 | 2010-05-05 | $7700.00 | Window Closed / Lapsed |