US4530150A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming conductive channel extensions to active device regions in CMOS device
Assignee: Fujitsu Ltd
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Filing: 1983-09-20
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Granted: 1985-07-23
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Expires: 2003-09-20
Abstract
Abstract A method for producing a semiconductor device which includes forming, in a well having the first conductivity type and selectively provided in a semiconductor substrate having a second conductivity type opposite the first conductivity type, two first impurity diffusion regions having the second conductivity type. In an exposed surface region of the substrate, the two second impurity diffusion regions, respectively, forming, in the well and the exposed surface region of the substrate, a third impurity diffusion region by implanting impurity ions having a P-type or N-type into the semiconductor substrate. The method also includes forming an electric current channel either between the two first impurity diffusion regions or between the two second impurity diffusion regions, thereby forming various integrated circuits by changing the wiring channel.
Inventors
- 👤 Takehide Shirato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 09:31
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0184; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
171 words
A method for producing a semiconductor device having a semiconductor substrate of a first conductivity type and having a well of a second conductivity type opposite the first conductivity type and selectively formed in the semiconductor substrate, comprising the steps of: (a) forming, in the well, two first impurity regions having the first conductivity type; (b) forming in an exposed surface region of the substrate, two second impurity regions having the second conductivity type; and (c) forming, in the well and the exposed surface region of the substrate, a third impurity region by implanting impurity ions of one of the first or second conductivity type into the semiconductor substrate to selectively form an electric current channel between one of the two second impurity regions and the two first impurity regions, so that integrated circuits can be formed by changing the electric current channel, the impurity ions of the third region being simutaneously introduced into a region between the two first impurity regions and a region between the two second impurity regions.
Claim 2
Independent Claim
171 words
A method for producing a semiconductor device having a semiconductor substrate of a first conductivity type and having a well of a second conductivity type opposite the first conductivity type and selectively formed in the semiconductor substrate, comprising the steps of: (a) forming, in the well, two first impurity regions having the first conductivity type; (b) forming in an exposed surface region of the substrate, two second impurity regions having the second conductivity type; and (c) forming, in the well and the exposed surface region of the substrate, a third impurity region by implanting impurity ions of one of the first or second conductivity type into the semiconductor substrate to selectively form an electric current channel between one of the two second impurity regions and the two first impurity regions, so that integrated circuits can be formed by changing the electric current channel, the impurity ions of the third region being simutaneously introduced into a region between the two first impurity regions and a region between the two second impurity regions.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein said step (b) comprises forming the second impurity regions using arsenic or phosphorus.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein said step (a) comprises forming the first impurity regions using boron or indium.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said step (c) comprises forming the third impurity regions using arsenic or phosphorus.
Claim 6
Dependent Claim
26 words
A method according to claim 1, wherein said step (c) comprises forming an integrated circuit of a N-channel open-drain output type employing said electric current channel.
Claim 7
Dependent Claim
26 words
A method according to claim 1, wherein said step (c) comprises forming an integrated circuit of a P-channel open-drain output type employing said electric current channel.
Claim 8
Dependent Claim
38 words
A method according to claim 1, wherein said step (c) comprises forming integrated circuits of both N-channel open-drain types and P-channel open-drain types by implanting impurities of both the first and second conductivity types into the semiconductor substrate.
Claim 9
Dependent Claim
20 words
A method according to claim 1, wherein said step (c) comprises forming a resistance layer from the electric current channel.
Claim 10
Dependent Claim
31 words
A method according to claim 2, wherein said step (b) comprises implanting phosphorus at a dose of 10 12 to 10 13 atm/cm 2 and an energy of substantially 100 KeV.
Claim 11
Dependent Claim
33 words
A method according to claim 3, wherein said step (a) comprises implanting boron or indium at a dose of 10 12 to 10 13 atm/cm 2 and an energy of substantially 30 KeV.
Claim 12
Dependent Claim
31 words
A method according to claim 4, wherein said step (c) comprises implanting phosphorus at a dose of 10 12 to 10 13 atm/cm 2 and an energy of substantially 100 KeV.
References Cited (Backward Citations)
US4306915A
Cited
US4235011A
Cited
US4213142A
Cited
US4490736A
Cited
US4325169A
Cited
US4342149A
Cited
US4354307A
Cited
US4433468A
Cited
US4346512A
Cited
US4366613A
Cited
US4385947A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-22 | 1989-01-21 | 1989-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-22 | 1993-01-21 | 1993-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-22 | 1997-01-21 | 1997-07-23 | $7700.00 | Window Closed / Lapsed |