US4306915A
Expired / Lapsed
US
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Method of making electrode wiring regions and impurity doped regions self-aligned therefrom
Assignee: NEC Corp
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Filing: 1979-04-23
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Granted: 1981-12-22
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Expires: 1999-04-23
Abstract
Abstract A semiconductor device suitable for a high-density integrated circuit is disclosed. The semiconductor device comprises an electrode wiring layer made of silicon with a substantially flat surface deposited on a major surface of a semiconductor substrate, the periphery of which is filled with an insulating layer produced by selectively oxidizing the silicon, a first impurity doped region formed in the semiconductor substrate in self-aligning relation with the electrode wiring layer, and a second impurity doped region coupled to the first impurity doped region and underlain the insulating layer.
Inventors
- 👤 Hiroshi Shiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:31
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/671; H10D30/00; H10D30/60; H10D30/601; H10D62/00; H10D62/80; H10D62/83; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/62; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/1406; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P76/00; H10P76/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W20/0698; Y; Y10; Y10S; Y10S438/00; Y10S438/911; Y10S438/914; Y10S438/92
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
226 words
A method of manufacturing a semiconductor device comprising the steps of depositing a silicon layer on a semiconductor substrate selectively covered with a first insulating layer whereby at least one portion of the silicon layer is in contact with the exposed area of the semiconductor substrate, covering the surface of the silicon layer with an oxidation-resistant layer, forming a predetermined pattern of a mask material on the oxidation-resistant layer, introducing an impurity of a conductivity type opposite to that of the exposed area of the semiconductor substrate into the exposed area through a part of the portion of said silicon layer using the mask material, selectively removing the oxidation-resistant layer by using the mask material, selectively oxidizing the silicon layer to its entire thickness by using the retained oxidation-resistant layer as a mask whereby at least the part of the portion of the silicon layer not covered by the oxidation-resistant layer is oxidized, forming a first opposite conductivity type region in the exposed area of the semiconductor substrate by the impurity introduced therein, and introducing an impurity of the same conductivity type as the first opposite conductivity type region into the exposed area of the semiconductor substrate through a non-oxidized part of the silicon layer to form a second opposite conductivity type region in the exposed area in contact with the first opposite conductivity type region.
Claim 2
Independent Claim
226 words
A method of manufacturing a semiconductor device comprising the steps of depositing a silicon layer on a semiconductor substrate selectively covered with a first insulating layer whereby at least one portion of the silicon layer is in contact with the exposed area of the semiconductor substrate, covering the surface of the silicon layer with an oxidation-resistant layer, forming a predetermined pattern of a mask material on the oxidation-resistant layer, introducing an impurity of a conductivity type opposite to that of the exposed area of the semiconductor substrate into the exposed area through a part of the portion of said silicon layer using the mask material, selectively removing the oxidation-resistant layer by using the mask material, selectively oxidizing the silicon layer to its entire thickness by using the retained oxidation-resistant layer as a mask whereby at least the part of the portion of the silicon layer not covered by the oxidation-resistant layer is oxidized, forming a first opposite conductivity type region in the exposed area of the semiconductor substrate by the impurity introduced therein, and introducing an impurity of the same conductivity type as the first opposite conductivity type region into the exposed area of the semiconductor substrate through a non-oxidized part of the silicon layer to form a second opposite conductivity type region in the exposed area in contact with the first opposite conductivity type region.
Claim 3
Dependent Claim
35 words
The method according to claim 1, wherein the first opposite conductivity type region and the second opposite conductivity type region form a gate region and a gate contact region of a junction field-effect transistor, respectively.
Claim 4
Dependent Claim
56 words
The method according to claim 1, wherein the first opposite conductivity type region comprises a drain region and a source region of a MOS field effect transistor and the second opposite type conductivity region comprises a drain contact region in contact with the drain region and a source contact region in contact with the source region.
Claim 5
Dependent Claim
43 words
The method according to claim 2, further comprising the step of introducing an impurity having the same conductivity type as the semiconductor substrate through a second non-oxidized part of the silicon layer to form a drain region of the junction field effect transistor.
Claim 6
Independent Claim
154 words
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate, forming an insulator film having at least one opening on a principal face of the semiconductor substrate, depositing a silicon layer on both the insulator film and the opening, depositing an oxidation-resistant film on the silicon layer, forming an etching-resistant layer having at least one opening, at least a part of the opening of the etching-resistant film being superposed on the opening of the insulator film, introducing an impurity into a selected portion of the substrate to form an impurity doped region utilizing the etching-resistant layer as a mask, patterning the oxidation-resistant film utilizing the etching-resistant layer as a mask, selectively oxidizing the silicon layer by utilizing the patterned oxidation-resistant film, removing the patterned oxidation-resistant film, thereby exposing a surface of the silicon layer, and forming a wiring layer in contact with the exposed surface of the silicon layer.
Claim 7
Independent Claim
154 words
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate, forming an insulator film having at least one opening on a principal face of the semiconductor substrate, depositing a silicon layer on both the insulator film and the opening, depositing an oxidation-resistant film on the silicon layer, forming an etching-resistant layer having at least one opening, at least a part of the opening of the etching-resistant film being superposed on the opening of the insulator film, introducing an impurity into a selected portion of the substrate to form an impurity doped region utilizing the etching-resistant layer as a mask, patterning the oxidation-resistant film utilizing the etching-resistant layer as a mask, selectively oxidizing the silicon layer by utilizing the patterned oxidation-resistant film, removing the patterned oxidation-resistant film, thereby exposing a surface of the silicon layer, and forming a wiring layer in contact with the exposed surface of the silicon layer.
Claim 8
Dependent Claim
22 words
The method according to claim 5, further comprising the step of transferring an impurity through the silicon layer to the semiconductor substrate.
Claim 9
Dependent Claim
19 words
The method according to claim 5, further comprising the step of oxidizing the exposed surface of the silicon layer.
Claim 10
Dependent Claim
18 words
The method according to claim 5, in which the silicon layer as deposited is a polycrystalline silicon layer.
Claim 11
Dependent Claim
13 words
The method according to claim 5, wherein the oxidation-resistant film comprises silicon nitride.
Claim 12
Dependent Claim
14 words
The method according to claim 5, in which said etching-resistant layer comprises a photoresist.
Claim 13
Independent Claim
109 words
The method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with a first insulating layer, depositing a silicon layer on the principal surface, depositing an oxidation-resistant layer on the silicon layer, depositing mask layer having a predetermined pattern on the oxidation-resistant layer, introducing an impurity into a selected portion of said substrate by utilizing the mask layer as a mask, patterning said oxidation-resistant layer by utilizing the mask layer of said oxidation-resistant layer, and oxidizing said silicon layer to its entire thickness by using the retained oxidation-resistant layer thereby to define a wiring pattern in the silicon layer.
Claim 14
Independent Claim
109 words
The method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with a first insulating layer, depositing a silicon layer on the principal surface, depositing an oxidation-resistant layer on the silicon layer, depositing mask layer having a predetermined pattern on the oxidation-resistant layer, introducing an impurity into a selected portion of said substrate by utilizing the mask layer as a mask, patterning said oxidation-resistant layer by utilizing the mask layer of said oxidation-resistant layer, and oxidizing said silicon layer to its entire thickness by using the retained oxidation-resistant layer thereby to define a wiring pattern in the silicon layer.
Claim 15
Independent Claim
136 words
A method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with an insulator film, depositing a silicon layer on the principal surface of the substrate, depositing an oxidation-resistant layer on the silicon layer, forming a mask layer having a predetermined pattern on the silicon layer, introducing a first impurity into a portion of the semiconductor substrate through the oxidation-resistant layer and the silicon layer by using the mask layer as a mask, selectively removing portions of the oxidation-resistant layer not covered by the mask layer and portions of the oxidation-resistant layer located at peripheral edges of the predetermined pattern by using the mask layer as a mask, and selectively oxidizing the silicon layer to its entire thickness using the retained portion of the oxidation-resistant layer.
Claim 16
Independent Claim
136 words
A method for fabricating a semiconductor device comprising the steps of preparing a semiconductor substrate having a principal surface selectively covered with an insulator film, depositing a silicon layer on the principal surface of the substrate, depositing an oxidation-resistant layer on the silicon layer, forming a mask layer having a predetermined pattern on the silicon layer, introducing a first impurity into a portion of the semiconductor substrate through the oxidation-resistant layer and the silicon layer by using the mask layer as a mask, selectively removing portions of the oxidation-resistant layer not covered by the mask layer and portions of the oxidation-resistant layer located at peripheral edges of the predetermined pattern by using the mask layer as a mask, and selectively oxidizing the silicon layer to its entire thickness using the retained portion of the oxidation-resistant layer.
Claim 17
Dependent Claim
37 words
The method according to claim 12, further comprising the steps of removing the retained portion of the oxidation-resistant layer to thereby expose a non-oxidized portion of the silicon layer, and oxidizing a surface of the non-oxidized portion.
Claim 18
Dependent Claim
36 words
The method according to claim 12, further comprising the steps of introducing a second impurity into the semiconductor substrate so as to contact with the introduced first impurity through the non-oxidized portion of the silicon layer.
Claim 19
Dependent Claim
44 words
The method according to claim 13, further comprising the steps of removing a part of the oxidized surface of the silicon layer, and forming a wiring layer connected to the non-oxidized portion of the silicon layer through the removed part of the oxidized surface.
Claim 20
Dependent Claim
89 words
The method according to claim 12, further comprising the steps of removing the retained oxidation-resistant layer to thereby expose a surface of the non-oxidized portion of the silicon layer, introducing a second impurity into the semiconductor substrate through the non-oxidized portion of the silicon layer, oxidizing a surface of the non-oxidized portion of the silicon layer, selectively removing a part of the oxidized surface of the silicon layer, and forming a wiring connected to the non-oxidized portion of the silicon layer through the removed part of the oxidized surface.
Claim 21
Dependent Claim
30 words
The method according to claim 14 or 16, in which the first and second impurities are of the same conductivity type which is opposite to that of the semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-12-21 | 1985-06-22 | 1985-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-12-21 | 1989-06-22 | 1989-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-12-21 | 1993-06-22 | 1993-12-22 | $7700.00 | Window Closed / Lapsed |