US4127931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NEC Corp
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Filing: 1977-11-02
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Granted: 1978-12-05
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Expires: 1997-11-02
Abstract
Abstract In a method for fabricating a semiconductor device, a polycrystalline film deposited on a main surface of a substrate is subjected to selective oxidation to form polycrystalline silicon electrode wiring paths separated by silicon oxide. An impurity of a conductivity type opposite to that of the substrate is introduced through at least one of the wiring paths into the substrate. Also disclosed is a novel semiconductor device fabricated according to this process which has a reduced junction area and a shortened junction-to-electrode distance.
Inventors
- 👤 Hiroshi Shiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10D10/00; H10D10/01; H10D10/051; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/117; Y10S148/124
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
133 words
A method of producing a semiconductor device comprising the steps of: preparing an opening in an insulating film covering one main surface of a semiconductor substrate to expose a portion of the surface of said substrate; depositing a silicon film on the surface of said insulating film and on the exposed surface of said substrate so as to make direct contact with said exposed surface of said substrate; selectively oxidizing a portion of said silicon film to form a silicon oxide film having at least a portion in contact with a part of said exposed portion of said substrate, said silicon oxide film forming a plurality of electrode wiring paths of said silicon film; and introducing an impurity through at least one of said plurality of electrode wiring paths into said semiconductor substrate.
Claim 2
Independent Claim
133 words
A method of producing a semiconductor device comprising the steps of: preparing an opening in an insulating film covering one main surface of a semiconductor substrate to expose a portion of the surface of said substrate; depositing a silicon film on the surface of said insulating film and on the exposed surface of said substrate so as to make direct contact with said exposed surface of said substrate; selectively oxidizing a portion of said silicon film to form a silicon oxide film having at least a portion in contact with a part of said exposed portion of said substrate, said silicon oxide film forming a plurality of electrode wiring paths of said silicon film; and introducing an impurity through at least one of said plurality of electrode wiring paths into said semiconductor substrate.
Claim 3
Dependent Claim
56 words
The method of claim 1, further comprising the steps of removing a portion of said silicon oxide between adjacent ones of said silicon electrode wiring paths, thereby to expose a portion of said main surface of said substrate, and thereafter oxidizing said exposed portion of said silicon substrate and a portion of said electrode wiring paths.
Claim 4
Dependent Claim
20 words
The method of claim 1, in which said impurity is of the same conductivity type as that of said substrate.
Claim 5
Dependent Claim
20 words
The method of claim 1, in which said impurity is of the opposite conductivity type as that of said substrate.
Claim 6
Dependent Claim
36 words
The method of claim 1, further comprising the steps of introducing another impurity having a conductivity type opposite to said impurity through at least another of said plurality of electrode wiring paths into said semiconductor substrate.
Claim 7
Dependent Claim
60 words
The method of claim 1, further comprising the step of further selectively oxidizing a portion of one of said plurality of electrode wiring paths, through which said impurity has been introduced, to form another electrode wiring path and introducing another impurity having a conductivity opposite to the first mentioned impurity through said another electrode wiring path into said semiconductor substrate.
Claim 8
Dependent Claim
25 words
The method of claim 1, further comprising the step of coating the surface of each of said electrode wiring paths with a second insulating film.
Claim 9
Dependent Claim
39 words
The method of claim 7, further comprising the steps of opening a window in said second insulating film covering one of said electrode wiring paths and providing an electrical connection to said one electrode wiring path through said window.
Claim 10
Dependent Claim
15 words
The method of claim 1, in which said silicon film is comprised of polycrystalline silicon.
Claim 11
Dependent Claim
30 words
The method of claim 1, in which said electrode wiring paths are in contact with the exposed surface of said substrate and extend to the surface of said insulating film.
Claim 12
Dependent Claim
40 words
The method of claim 1, in which said silicon film is comprised of polycrystalline silicon and said electrode wiring paths are in contact with the exposed surface of said semiconductor region and extend to the surface of said insulating film.
Claim 13
Independent Claim
145 words
A method of producing a semiconductor device comprising the steps of preparing an opening in an insulating film covering one main surface of a semiconductor substrate to expose a portion of the surface of a semiconductor region of one conductivity type in said semiconductor substrate, depositing a silicon film on the surface of said insulating film and on the exposed surface of said semiconductor region, selectively oxidizing a portion of said silicon film to form a silicon oxide film in contact with a part of said exposed portion of said substrate, said silicon oxide film separating said silicon film into a plurality of electrode wiring paths of said silicon film spaced and insulated from each other by said silicon oxide film, and introducing an impurity of the opposite conductivity type through at least one of said plurality of electrode wiring paths into said semiconductor region.
Claim 14
Independent Claim
145 words
A method of producing a semiconductor device comprising the steps of preparing an opening in an insulating film covering one main surface of a semiconductor substrate to expose a portion of the surface of a semiconductor region of one conductivity type in said semiconductor substrate, depositing a silicon film on the surface of said insulating film and on the exposed surface of said semiconductor region, selectively oxidizing a portion of said silicon film to form a silicon oxide film in contact with a part of said exposed portion of said substrate, said silicon oxide film separating said silicon film into a plurality of electrode wiring paths of said silicon film spaced and insulated from each other by said silicon oxide film, and introducing an impurity of the opposite conductivity type through at least one of said plurality of electrode wiring paths into said semiconductor region.
Claim 15
Dependent Claim
56 words
The method of claim 10, in which said plurality of electrode wiring paths include a first electrode wiring path and a second electrode wiring path, and said impurity of the opposite conductivity type is introduced through said first electrode wiring path into said semiconductor region to form therein a first region of the opposite conductivity type.
Claim 16
Dependent Claim
28 words
The method of claim 11, further comprising the step of introducing an impurity of said one conductivity type through said second electrode wiring path into said semiconductor region.
Claim 17
Dependent Claim
92 words
The method of claim 13, further comprising the steps of selectively oxidizing said first electrode wiring path to form another silicon oxide film which separates said first electrode wiring path into at least two electrode wiring paths including third and fourth electrode wiring paths, said third and fourth electrode wiring paths each having a portion in direct contact with said first region, and introducing an impurity of said one conductivity type through said fourth electrode wiring path into said first region to form therein a second region of said one conductivity type.
Claim 18
Dependent Claim
27 words
The method of claim 15, in which said impurity of said one conductivity type is also introduced through said second electrode wiring path into said semiconductor region.
Claim 19
Dependent Claim
22 words
The method of claim 16, further comprising the step of forming an insulating film over the surface of said electrode wiring paths.
Claim 20
Independent Claim
166 words
A method of producing a semiconductor device comprising the steps of preparing an opening in an insulating film covering a surface of a semiconductor substrate to expose a portion of the surface of said substrate, depositing a semiconductor layer on the surface of said insulating film and on the exposed surface of said substrate, introducing an impurity of one conductivity type through said opening into said substrate to form a first semiconductor region of one conductivity type, selectively converting a portion of said semiconductor layer to form an insulator layer, said insulator layer having a portion contacting with a part of the surface of said first semiconductor region, said insulator layer forming a plurality of segments of said semiconductor layer, at least two of said segments each having a portion contacting with a part of the surface of said first semiconductor region, and introducing an impurity of the opposite conductivity type through at least one of said at least two segments into said first semiconductor region.
Claim 21
Independent Claim
166 words
A method of producing a semiconductor device comprising the steps of preparing an opening in an insulating film covering a surface of a semiconductor substrate to expose a portion of the surface of said substrate, depositing a semiconductor layer on the surface of said insulating film and on the exposed surface of said substrate, introducing an impurity of one conductivity type through said opening into said substrate to form a first semiconductor region of one conductivity type, selectively converting a portion of said semiconductor layer to form an insulator layer, said insulator layer having a portion contacting with a part of the surface of said first semiconductor region, said insulator layer forming a plurality of segments of said semiconductor layer, at least two of said segments each having a portion contacting with a part of the surface of said first semiconductor region, and introducing an impurity of the opposite conductivity type through at least one of said at least two segments into said first semiconductor region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-12-04 | 1982-06-05 | 1982-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-12-04 | 1986-06-05 | 1986-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-12-04 | 1990-06-05 | 1990-12-05 | $7700.00 | Window Closed / Lapsed |