US3947299A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: US Philips Corp
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Filing: 1975-01-09
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Granted: 1976-03-30
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Expires: 1995-01-09
Abstract
Abstract A method of making a semiconductor device for application in a monolithic integrated circuit is described wherein a local buried insulating layer is provided at the interface of a substrate and a semiconductive layer, and then the semiconductive layer is locally converted into a insulator which extends down to the buried insulator. The method is useful, among other things, for providing isolated semiconductor islands.
Inventors
- 👤 Bernard Hendrik Weijland
- 👤 Wilhelmus Hendricus Cornelis Gerardus Verkuijlen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:49
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/60; H10P14/61; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/014; H10W10/0143; H10W10/0145; H10W10/0148; H10W10/041; H10W10/10; H10W10/13; H10W10/17; H10W10/40; H10W20/00; H10W20/01; H10W20/021; H10W20/20; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/122; Y10S148/151; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
142 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, thermally oxidizing a limited first portion of a surface of the substrate to provide a first layer of insulating material leaving adjacent thereto exposed second portions of the semiconductor substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the first layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried first layer, and subjecting the exposed surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the layer and extends down to the buried first layer.
Claim 2
Independent Claim
142 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, thermally oxidizing a limited first portion of a surface of the substrate to provide a first layer of insulating material leaving adjacent thereto exposed second portions of the semiconductor substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the first layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried first layer, and subjecting the exposed surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the layer and extends down to the buried first layer.
Claim 3
Dependent Claim
60 words
A method as claimed in claim 1 wherein prior to the conversion treatment the semiconductive layer is locally removed over a part of its thickness in such manner that an accidented surface is formed, and the conversion treatment is carried out until the said accidented surface is smoothed at least partly by the variation in volume associated with the conversion.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 wherein the semiconductive layer consists of silicon and the conversion occurs by deep oxidation.
Claim 5
Dependent Claim
24 words
A method as claimed in claim 2 wherein the material converting mask is also used as an etchant-resistant mask for providing the accidented surface.
Claim 6
Dependent Claim
13 words
A method as claimed in claim 1 wherein the mask comprises silicon nitride.
Claim 7
Dependent Claim
40 words
A method as claimed in claim 1 wherein the thermal oxidation is carried out so deep while masking the second portions of the substrate against oxidation that the resulting insulating layer to be buried is inset in the semiconductor substrate.
Claim 8
Dependent Claim
30 words
A method as claimed in claim 1 wherein the semiconductor is of silicon, and during the conversion of the zones of semiconductor material boron is absorbed in the converted zone.
Claim 9
Dependent Claim
23 words
A method as claimed in claim 7 wherein the zones of the provided semiconductor layer to be converted are previously doped with boron.
Claim 10
Dependent Claim
22 words
A method as claimed in claim 7 wherein the conversion occurs at least temporarily in an atmosphere which contains a boron compound.
Claim 11
Dependent Claim
25 words
A method as claimed in claim 7 wherein a layer of boron oxide or borate glass is locally provided and serves as the boron source.
Claim 12
Dependent Claim
65 words
A method as claimed in claim 1 wherein during the deposition of the semiconductor layer the semiconductor material which forms over the first layer is in polycrystalline form and that which forms over the exposed second portions in monocrystalline epitaxial semiconductor material, and during the conversion of the zones of the provided semiconductor layer a part of the polycrystalline material is masked against the conversion.
Claim 13
Dependent Claim
46 words
A method as claimed in claim 11 wherein a diffused zone is formed in the provided layer over only part of its thickness, and simultaneously with the formation of the diffused zone at least a part of the polycrystalline material is doped throughout the layer thickness.
Claim 14
Dependent Claim
62 words
A method as claimed in claim 1 wherein a diffusion mask is provided on the surface of the semiconductor substrate and zones of a highly doped semiconductor material are formed by diffusion of suitable impurities through openings in said diffusion mask, after which at least a part of said diffusion mask is retained as at least part of the buried insulating layer.
Claim 15
Dependent Claim
32 words
A method as claimed in claim 13 wherein the diffusion mask consists at least partly of silicon oxide and impurities are diffused in the underlying semiconductor material to form a channel-interrupting zone.
Claim 16
Dependent Claim
18 words
A method as claimed in claim 13 wherein the diffusion mask consists at least partly of silicon nitride.
Claim 17
Independent Claim
141 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, forming directly on a limited first portion of a surface of the silicon substrate a layer comprising nitride leaving adjacent thereto exposed second portions of the silicon substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the nitride layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried nitride layer, and subjecting the non-masked surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the semiconductive layer and extends down to the buried nitride layer.
Claim 18
Independent Claim
141 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, forming directly on a limited first portion of a surface of the silicon substrate a layer comprising nitride leaving adjacent thereto exposed second portions of the silicon substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the nitride layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried nitride layer, and subjecting the non-masked surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the semiconductive layer and extends down to the buried nitride layer.
Claim 19
Dependent Claim
40 words
A method as claimed in claim 16 wherein during the deposition of the semiconductive layer, the semiconductor material which forms over the buried nitride layer is in polycrystalline form and that which forms over the exposed second portions is monocrystalline.
Claim 20
Dependent Claim
22 words
A method as claimed in claim 17 wherein during the material conversion step, a part only of the polycrystalline material is masked.
Claim 21
Independent Claim
175 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, forming on a limited first portion of a surface of the substrate a first layer comprising impurity-doped insulating material leaving adjacent thereto exposed second portions of the semiconductor substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the first layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried first layer, and subjecting the exposed surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the layer and extends down to the buried first layer, during the preceding steps sufficient impurity out-diffusing from the doped buried layer to form underneath in the substrate an impurity-doped silicon zone having a higher concentration of impurities than that of underlying substrate portions.
Claim 22
Independent Claim
175 words
A method of making a semiconductor device comprising, providing a monocrystalline semiconductor silicon substrate, forming on a limited first portion of a surface of the substrate a first layer comprising impurity-doped insulating material leaving adjacent thereto exposed second portions of the semiconductor substrate, depositing on the substrate surface so as to cover both the first and second portions at least one layer of semiconductive material so as to bury the first layer, providing a material converting mask over surface portions of the semiconductive layer leaving exposed surface portions lying over the buried first layer, and subjecting the exposed surface portions of the semiconductive layer to a treatment for converting same into an insulating material until so much of the said semiconductive layer is converted that the insulating material becomes inset into the layer and extends down to the buried first layer, during the preceding steps sufficient impurity out-diffusing from the doped buried layer to form underneath in the substrate an impurity-doped silicon zone having a higher concentration of impurities than that of underlying substrate portions.
Claim 23
Dependent Claim
40 words
A method as claimed in claim 19 wherein during the deposition of the semiconductive layer, the semiconductor material which forms over the buried insulating layer is in polycrystalline form and that which forms over the exposed second portions is monocrystalline.
Claim 24
Dependent Claim
22 words
A method as claimed in claim 20 wherein during the material conversion step, a part only of the polycrystalline material is masked.
Claim 25
Dependent Claim
29 words
A method as claimed in claim 19 wherein the substrate portion underlying the doped first layer is of one-type conductivity, and the out-diffused impurity forms a one-type doped zone.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-30 | 1979-09-29 | 1980-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-30 | 1983-09-29 | 1984-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-30 | 1987-09-29 | 1988-03-30 | $7700.00 | Window Closed / Lapsed |