US4354307A
Expired / Lapsed
US
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Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
Assignee: Samsung Electronics Co Ltd
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Filing: 1979-12-03
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Granted: 1982-10-19
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Expires: 1999-12-03
Abstract
Abstract In the disclosed method, dopant atoms of a first conductivity type are implanted into the surface of a semiconductor substrate to form a channel region of each transistor having a relatively high dopant density at a predetermined depth below the surface and a substantially lower dopant density at the surface. This eliminates reachthrough in the channel without adversely increasing the channels threshold voltage. Thereafter, dopant atoms of a second conductivity type are implanted into the substrate to form source and drain regions adjacent to the channels having a depth of less than 0.3 μm below the surface. This minimizes the radius of curvature and corresponding depletion width at the respective junctions with the channel. Subsequently, a patterned insulating layer is formed on said surface at temperatures that are far below the insulating layer's flow point. This avoids diffusing the distribution of the implanted dopant atoms. Later, a layer of metallic contact is formed in an opening of the patterned insulating layer that exposes one of the source and drain regions. This layered metallic contact has a lower layer which is comprised of a material that prevents an upper layer from penetrating through the exposed source or drain region.
Inventors
- 👤 Mark A. Vinson
- 👤 Rakesh Kumar
- 👤 Norman W. Jones
- 👤 Michael R. Gulett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:22
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D62/80; H10D62/83; H10D62/834; H10D64/00; H10D64/60; H10D64/62; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038; H10P30/202; H10P30/204; H10P30/212; H10P36/00; H10P36/03; H10W; H10W20/00; H10W20/01
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
242 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a first conductivity type into at least said channel region to form a peak density of said first conductivity type dopant atoms at a predetermined depth below said surface of said channel and a substantially lower density of said first conductivity type dopant atoms at said surface of said channel, which peak density reduces reachthrough at said predetermined depth beneath the surface of said channel without adversely increasing the channel's threshold voltage; implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth; and depositing a smooth insulating layer over said gate at subatmospheric pressures and at temperatures that are below the insulating layer's flow point to eliminate the need for a separate reflow step to smooth out said layer, which reflow step would adversely alter the distribution of said implanted dopant atoms.
Claim 2
Independent Claim
242 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a first conductivity type into at least said channel region to form a peak density of said first conductivity type dopant atoms at a predetermined depth below said surface of said channel and a substantially lower density of said first conductivity type dopant atoms at said surface of said channel, which peak density reduces reachthrough at said predetermined depth beneath the surface of said channel without adversely increasing the channel's threshold voltage; implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth; and depositing a smooth insulating layer over said gate at subatmospheric pressures and at temperatures that are below the insulating layer's flow point to eliminate the need for a separate reflow step to smooth out said layer, which reflow step would adversely alter the distribution of said implanted dopant atoms.
Claim 3
Dependent Claim
69 words
A method according to claim 1 and further including the steps of: implanting atoms into a backside surface of said substrate to locally disrupt the inter-atomic bonding of the substrate to a predetermined depth; and heating said substrate before said channel region is implanted to diffuse a substantial portion of any impurities contained in the substrate to the disrupted bonding sites without diffusing said dopant density in said channel.
Claim 4
Dependent Claim
31 words
A method according to claim 1, wherein subsequent to said implanting of said channel, a mixture of polysilicon and dopant atoms are simultaneously deposited as a conductive layer over said surface.
Claim 5
Dependent Claim
20 words
A method according to claim 3, wherein portions of said deposited layer are removed by an anisotropic planar plasma etch.
Claim 6
Dependent Claim
48 words
A method according to claim 1, and further including the step of forming openings in said insulating layer to expose said source or drain region and expose a portion of the adjacent substrate, and wherein said dopant atoms of said second conductivity type are implanted into said openings.
Claim 7
Dependent Claim
69 words
A method according to claim 5, and further including the steps of: forming a layer of a silicide of a noble metal over the surface of the source or drain region that is exposed through said openings; disposing over said silicide, a layer of a barrier material that prevents the diffusion of a preselected conductive material therethrough; and disposing a layer of said conductive material over said barrier layer.
Claim 8
Dependent Claim
79 words
A method according to claim 5, and further including the steps of: forming a layer of polysilicon over the surface of the source or drain region that is exposed through said opening; forming a layer of a silicide of a noble (nobel) metal over said polysilicon layer; disposing over said silicide, a layer of a barrier material that prevents the diffusion of a preselected conductive material therethrough; and disposing a layer of said conductive material over said barrier layer.
Claim 9
Dependent Claim
28 words
A method according to claim 1, wherein said dopant atoms of said first conductivity type are P-type, and said dopant atoms of said second conductivity type are N-type.
Claim 10
Dependent Claim
28 words
A method according to claim 1, wherein said dopant atoms of said first conductivity type are N-type, and said dopant atoms of said second conductivity type are P-type.
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein said relatively high dopant density is at least twenty times said lower dopant density.
Claim 12
Dependent Claim
30 words
A method according to claim 1, wherein said relatively high dopant density and said lower dopant density respectively are approximately 1.5×10 16 atoms/cm 3 and 4×10 15 atoms/cm 3 .
Claim 13
Dependent Claim
14 words
A method according to claim 1, wherein said insulating layer is SiO 2 .
Claim 14
Dependent Claim
26 words
A method according to claim 1, wherein said insulating layer is formed by a deposition of undoped SiO 2 at temperatures of less than 600° C.
Claim 15
Independent Claim
192 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a first conductivity type into at least said channel region to form a peak density of said first conductivity type dopant atoms at a predetermined depth below said surface of said channel and a substantially lower density of said first conductivity type dopant atoms at said surface of said channel, which peak density reduces reachthrough at said predetermined depth beneath said surface of said channel without adversely increasing the channel's threshold voltage; implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth.
Claim 16
Independent Claim
192 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a first conductivity type into at least said channel region to form a peak density of said first conductivity type dopant atoms at a predetermined depth below said surface of said channel and a substantially lower density of said first conductivity type dopant atoms at said surface of said channel, which peak density reduces reachthrough at said predetermined depth beneath said surface of said channel without adversely increasing the channel's threshold voltage; implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth.
Claim 17
Dependent Claim
58 words
A method according to claim 14, and further including the step of depositing a smooth insulating layer on said surface at subatmospheric pressures and at temperatures that are below the insulating layer's flow point to avoid diffusing the distribution of said implanted dopant atoms by eliminating the need for a separate reflow step to smooth out said layer.
Claim 18
Dependent Claim
41 words
A method according to claim 14, wherein said relatively high dopant density is at least twenty times the magnitude of and has a substantially smaller tolerance than the substrate dopant density to mullify any concentration tolerances in the substrate dopant density.
Claim 19
Dependent Claim
36 words
A method according to claim 14, and further including the step of implanting dopant atoms of said second conductivity type in said channel between said predetermined depth and said surface to adjust the channel's threshold voltage.
Claim 20
Independent Claim
186 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, having a peak density of first conductivity type dopant atoms at a predetermined depth below said surface of said channel, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth; and depositing a smooth insulating layer over said gate at subatmospheric pressures and at temperatures that are below the insulating layer's flow point to eliminate the need for a separate reflow step to smooth out said layer, which reflow step would adversely alter the distribution of said implanted dopant atoms.
Claim 21
Independent Claim
186 words
A method of forming a field effect transistor of the type which comprises a semiconductor substrate having a major surface, spaced-apart source and drain regions in said substrate adjacent said surface, a channel region in said substrate adjacent said surface and said source and drain regions, having a peak density of first conductivity type dopant atoms at a predetermined depth below said surface of said channel, and a gate overlying said channel region; wherein said method includes the steps of: implanting dopant atoms of a second conductivity type opposite to said first conductivity type into said source and drain regions to form source and drain junctions with said channel having radii at said surface of less than said predetermined depth, which radii operate to reduce reachthrough at said surface of said channel above said predetermined depth; and depositing a smooth insulating layer over said gate at subatmospheric pressures and at temperatures that are below the insulating layer's flow point to eliminate the need for a separate reflow step to smooth out said layer, which reflow step would adversely alter the distribution of said implanted dopant atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-10-18 | 1986-04-19 | 1986-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-10-18 | 1990-04-19 | 1990-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-10-18 | 1994-04-19 | 1994-10-19 | $7700.00 | Window Closed / Lapsed |