US3938243A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier diode semiconductor structure and method
Assignee: Signetics Corp
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Filing: 1974-05-17
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Granted: 1976-02-17
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Expires: 1994-05-17
Abstract
Abstract Schottky barrier diode semiconductor structure having a semiconductor body formed essentially of silicon and having a surface with an active device formed in the semiconductor body having collector, base and emitter regions and with at least two metals on said surface combining with the silicon to form an alloy of at least two metals and silicon which is in contact with the collector, base and emitter regions and also extends beyond the base region to form a Schottky barrier diode having a barrier height which is determined by the composition of the alloy.
Inventors
- 👤 Warren C. Rosvold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:07
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; C; C23; C23C; C23C14/00; C23C14/58; C23C14/5806; C23C14/5893; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/139
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
In a method for fabricating a Schottky barrier diode semiconductor structure, providing a semiconductor body formed essentially of silicon having a surface, forming an active semiconductor device in said semiconductor body having collector, base and emitter regions extending to said surface, forming an insulative coating on said surface with openings exposing portions of said regions, one of said openings extending from the base region to the collector region, forming a ternary alloy of approximately 50% silicon, 371/2% to 45% nickel and 5% to 121/2% platinum in said openings in ohmic contact with the emitter, base and collector regions and in rectifying contact with the collector region in said one opening, whereby a Schottky barrier diode is formed in said one opening, and adjusting the relative amounts of nickel and platinum in said alloy to provide a predetermined barrier height in the range of approximately 0.64 to 0.835 electron volts.
Claim 2
Dependent Claim
149 words
In a method for fabricating a Schottky barrier diode semiconductor structure, providing a semiconductor body formed essentially of silicon having a surface, forming an active semiconductor device in said semiconductor body having collector, base and emitter regions extending to said surface, forming an insulative coating on said surface with openings exposing portions of said regions, one of said openings extending from the base region to the collector region, forming a ternary alloy of approximately 50% silicon, 371/2% to 45% nickel and 5% to 121/2% platinum in said openings in ohmic contact with the emitter, base and collector regions and in rectifying contact with the collector region in said one opening, whereby a Schottky barrier diode is formed in said one opening, and adjusting the relative amounts of nickel and platinum in said alloy to provide a predetermined barrier height in the range of approximately 0.64 to 0.835 electron volts.
Claim 3
Dependent Claim
37 words
A method as in claim 1 wherein the relative amounts of nickel and platinum are adjusted so that the ternary alloy contains 371/2% nickel and 121/2% platinum to provide a barrier height of approximately 0.75 electron volts.
Claim 4
Dependent Claim
20 words
A method as in claim 1 wherein the formation of said ternary alloy is by use of a solid-solid reaction.
Claim 5
Dependent Claim
21 words
A method as in claim 3 wherein said solid-solid reaction is carried out ranging in temperatures from 350° to approximately 900°C.
Claim 6
Dependent Claim
19 words
A method as in claim 3 wherein said solid-solid reaction is carried out in a temperature of approximately 450°C.
Claim 7
Dependent Claim
132 words
In a method for fabricating a Schottky barrier diode semiconductor structure, the steps of: providing a semiconductor body formed essentially of silicon having a surface, forming an active semiconductor device in said semiconductor body having emitter, base and collector regions extending to said surface, forming a coating on such surface comprised of at least two metals including nickel and platinum which combine with the silicon to form at least a ternary alloy which is in ohmic contact with the emitter, base and collector regions and is also in rectifying contact with the collector region to form a Schottky barrier diode, and adjusting the ratio of nickel and platinum so that the platinum forms 25% and the nickel 75% of the two-metal coating to provide a barrier height of approximately 0.75 electron volts.
Claim 8
Dependent Claim
132 words
In a method for fabricating a Schottky barrier diode semiconductor structure, the steps of: providing a semiconductor body formed essentially of silicon having a surface, forming an active semiconductor device in said semiconductor body having emitter, base and collector regions extending to said surface, forming a coating on such surface comprised of at least two metals including nickel and platinum which combine with the silicon to form at least a ternary alloy which is in ohmic contact with the emitter, base and collector regions and is also in rectifying contact with the collector region to form a Schottky barrier diode, and adjusting the ratio of nickel and platinum so that the platinum forms 25% and the nickel 75% of the two-metal coating to provide a barrier height of approximately 0.75 electron volts.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-02-16 | 1979-08-18 | 1980-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-02-16 | 1983-08-18 | 1984-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-02-16 | 1987-08-18 | 1988-02-17 | $7700.00 | Window Closed / Lapsed |