Schottky-barrier diode process and devices

Abstract

Abstract A SCHOTTKY-BARRIER DIODE CAPABLE OF EXHIBITING SUPERIOR REVERSE-BIAS OPERATING CHARACTERISTICS AND PARTICULARLY SUITABLE FOR LARGE-SCALE INTEGRATION CAN BE FABRICATED BY A METHOD COMPATIBLE WITH STANDARD SEMICONDUCTOR PROCESSING TECHNIQUES. BRIEFLY, A HIGHLY CONDUCTIVE METALLIC LAYER OVERLYING A REGION OF SEMICONDUCTOR MATIERAL IS HEATED TO A TEMPERATURE SUFFICIENT TO ENABLE SOLID-STATE DIFFUSION TO OCCUR BETWEEN THE SEMICONDUCTOR AND METAL, BUT BELOW THE EUTECTIC POINT OF BOTH. A METAL-SEMICONDUCTOR JUNCTION IS THEREBY FORMED, WHEREIN THE JUNCTION LIES BELOW THE ORIGINAL SURFACE OF THE SEMICONDUCTOR REGION BUT HAS AN EDGE AT THE SURFACE, AND UNWANTED IMPUJRITIES ARE PREVENTED FROM INTERFERING WITH OPERATION.

Inventors

• 👤 Robert T Jenkins
• 👤 Garth H Wilson

Bibliographic Details