US4346512A
Expired / Lapsed
US
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Integrated circuit manufacturing method
Assignee: Fairchild Semiconductor Corp
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Filing: 1980-05-05
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Granted: 1982-08-31
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Expires: 2000-05-05
Abstract
Abstract A method for forming bipolar semiconductor devices and compiementary metal-oxide semiconductor (CMOS) field effect devices on a single crystal substrate wherein source and drain contact regions of one of the CMOS devices is formed simultaneously with the formation of a base region of the bipolar device and source and drain contact regions of the other one of the CMOS devices are formed simultaneously with the emitter region of the bipolar device. Because the emitter region is formed with a relatively high doping concentration and since the source and drain contact regions are formed simultaneously with the same relatively high doping concentration, the process includes the step of covering the surfaces of these source and drain contact regions during thermal growth of a gate oxide on the portions of the surface of the semiconductor between the source and drain contact regions to prevent dopant in the source and drain contact regions from entering the surface of the semiconductor between source and drain contact regions during the thermal growth of the gate oxide.
Inventors
- 👤 Victor K. C. Liang
- 👤 Bernard Bouyssounouse
- 👤 Ernest W. Yim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:18
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/919; Y10S438/981
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
97 words
A method for forming a field effect transistor and a bipolar transistor in a semiconductor comprising the steps of: (a) simultaneously forming source and drain contact regions of the field effect transistor and an emitter region of the bipolar transistor in the semiconductor with the same doping concentrations; and (b) heating the semiconductor forming an insulating layer on a surface portion of the semiconductor disposed between the source and drain contact regions while preventing dopant in the source and drain contact regions from entering the surface portion of the semiconductor between the source and drain contact regions.
Claim 2
Independent Claim
97 words
A method for forming a field effect transistor and a bipolar transistor in a semiconductor comprising the steps of: (a) simultaneously forming source and drain contact regions of the field effect transistor and an emitter region of the bipolar transistor in the semiconductor with the same doping concentrations; and (b) heating the semiconductor forming an insulating layer on a surface portion of the semiconductor disposed between the source and drain contact regions while preventing dopant in the source and drain contact regions from entering the surface portion of the semiconductor between the source and drain contact regions.
Claim 3
Dependent Claim
46 words
The method recited in claim 1 including the step of forming a complementary field effect transistor, such later forming step including the step of forming the base region of the bipolar transistor and the source and drain contact regions of the complementary field effect transistor simultaneously.
Claim 4
Independent Claim
82 words
A method for forming a field effect transistor and a bipolar transistor in a semiconductor comprising the steps of: (a) simultaneously forming doped source and drain contact regions of the field effect transistor and an emitter region of the bipolar transistor with the same doping concentration; and (b) forming an insulating layer on a surface portion of the semiconductor disposed between the source and drain contact regions while preventing dopant in the doped regions from entering such surface portion of the semiconductor.
Claim 5
Independent Claim
82 words
A method for forming a field effect transistor and a bipolar transistor in a semiconductor comprising the steps of: (a) simultaneously forming doped source and drain contact regions of the field effect transistor and an emitter region of the bipolar transistor with the same doping concentration; and (b) forming an insulating layer on a surface portion of the semiconductor disposed between the source and drain contact regions while preventing dopant in the doped regions from entering such surface portion of the semiconductor.
Claim 6
Dependent Claim
45 words
The method recited in claim 3 including the step of forming a second insulating layer over the source and drain contact regions and wherein such second insulating layer is disposed over such source and drain contact regions during formation of the first mentioned insulating layer.
Claim 7
Dependent Claim
20 words
The method recited in claim 4 including the step of forming a gate electrode over the first mentioned insulating layer.
Claim 8
Dependent Claim
20 words
The method recited in claim 3 including the step of forming a gate electrode over the first mentioned insulating layer.
Claim 9
Independent Claim
148 words
A method of forming a field effect device and a bipolar transistor in a semiconductor comprising the step of: (a) simultaneously forming source and drain contact regions of the field effect device and an emitter region of the bipolar transistor with the same doping concentration; (b) forming a first insulating layer over the source and drain contact regions, such layer having a space between such source and drain contact regions to expose a portion of the surface of the semiconductor between the source and drain contact regions; (c) forming a second insulating layer on the exposed portion of the surface of the semiconductor between the source and drain contact regions with the first insulating layer disposed over the source and drain contact regions; and (d) forming a gate electrode over the second insulating layer and source and drain electrodes in contact with the source and drain contact regions.
Claim 10
Independent Claim
148 words
A method of forming a field effect device and a bipolar transistor in a semiconductor comprising the step of: (a) simultaneously forming source and drain contact regions of the field effect device and an emitter region of the bipolar transistor with the same doping concentration; (b) forming a first insulating layer over the source and drain contact regions, such layer having a space between such source and drain contact regions to expose a portion of the surface of the semiconductor between the source and drain contact regions; (c) forming a second insulating layer on the exposed portion of the surface of the semiconductor between the source and drain contact regions with the first insulating layer disposed over the source and drain contact regions; and (d) forming a gate electrode over the second insulating layer and source and drain electrodes in contact with the source and drain contact regions.
Claim 11
Independent Claim
205 words
A method of forming a field effect device having source and drain contact regions in a semiconductor, comprising the steps of: (a) forming a first insulating layer over a surface of the semiconductor, such first insulating layer having a pair of spaced windows separated by a portion of the first insulating layer, such pair of windows exposing portions of the surface of the semiconductor having the source and drain contact regions; (b) forming a pair of spaced second insulating layers on the portions of the surface of the semiconductor exposed by the spaced windows, such pair of spaced second insulating layers covering the source and drain contact regions; (c) removing the portion of the first insulating layer disposed between the pair of windows exposing a portion of the surface of the semiconductor between the source and drain contact regions leaving the pair of spaced second insulating layers covering the source and drain contact regions; and (d) forming a third insulating layer over the portion of the surface of the semiconductor exposed by removing the portion of the first insulating layer and disposed between the pair of spaced second insulating layers with such pair of spaced second insulating layers covering the source and drain contact regions.
Claim 12
Independent Claim
205 words
A method of forming a field effect device having source and drain contact regions in a semiconductor, comprising the steps of: (a) forming a first insulating layer over a surface of the semiconductor, such first insulating layer having a pair of spaced windows separated by a portion of the first insulating layer, such pair of windows exposing portions of the surface of the semiconductor having the source and drain contact regions; (b) forming a pair of spaced second insulating layers on the portions of the surface of the semiconductor exposed by the spaced windows, such pair of spaced second insulating layers covering the source and drain contact regions; (c) removing the portion of the first insulating layer disposed between the pair of windows exposing a portion of the surface of the semiconductor between the source and drain contact regions leaving the pair of spaced second insulating layers covering the source and drain contact regions; and (d) forming a third insulating layer over the portion of the surface of the semiconductor exposed by removing the portion of the first insulating layer and disposed between the pair of spaced second insulating layers with such pair of spaced second insulating layers covering the source and drain contact regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-30 | 1986-03-01 | 1986-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-30 | 1990-03-01 | 1990-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-30 | 1994-03-01 | 1994-08-31 | $7700.00 | Window Closed / Lapsed |