Abstract A method and system for screening semiconductor circuits is disclosed herein. A circuit 50, such as an SOI circuit, is provided. The circuit includes a plurality of transistors and is coupled to a supply voltage node V DD , a reference node V SS , and a substrate node V SUB . A supply voltage is applied to the supply node while a reference voltage is applied to the reference node and a test voltage is applied to the substrate node. The current I DD flowing to the supply and/or reference node is then measured. These steps are repeated for a plurality of test circuits to determine at least one performance and/or reliability criterion. The steps can then be repeated to screen other circuits by comparing the measured current to the reliability limit(s).
A system for testing a semiconductor which includes a circuit having a plurality of transistors, said circuit further including a supply voltage node, a reference node and a substrate node, said system comprising: circuitry for applying a supply voltage to said supply voltage node of said circuit; circuitry for applying a reference voltage to said reference node of said circuit; circuitry for applying a test voltage to said substrate node of said circuit; circuitry for measuring a current flowing to said supply node such that the current flowing to the supply node can be compared to a predetermined current criterion to obtain performance information about said circuit.
Claim 2
Independent Claim
107 words
A system for testing a semiconductor which includes a circuit having a plurality of transistors, said circuit further including a supply voltage node, a reference node and a substrate node, said system comprising: circuitry for applying a supply voltage to said supply voltage node of said circuit; circuitry for applying a reference voltage to said reference node of said circuit; circuitry for applying a test voltage to said substrate node of said circuit; circuitry for measuring a current flowing to said supply node such that the current flowing to the supply node can be compared to a predetermined current criterion to obtain performance information about said circuit.
Claim 3
Dependent Claim
17 words
The system of claim 1 wherein said performance information comprises information on radiation hardness of said circuit.
Claim 4
Dependent Claim
17 words
The system of claim 1 wherein said performance information comprises information on the reliability of said circuit.
Claim 5
Dependent Claim
12 words
The system of claim 1 wherein said circuit comprises a silicon-on-insulator circuit.
Claim 6
Dependent Claim
25 words
The system of claim 1 wherein said system for testing comprises a system for performing a screening test prior to packaging of said semiconductor circuit.