US4220918A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation hardness testing for field effect devices
Assignee: Plessey Handel und Investments AG
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Filing: 1978-03-22
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Granted: 1980-09-02
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Expires: 1998-03-22
Abstract
Abstract A method of testing a field effect device for radiation hardness. The method comprises the steps of subjecting the field effect device to a low temperature environment, developing a first set of data points by measuring the conductance of the field effect device as a function of gate voltage at a first substrate bias, developing a second set of data points by measuring the conductance of the field effect device as a function of gate voltage at a second substrate bias, which is different from the first substrate bias, and comparing the first and second sets of data points to obtain an assessment of radiation hardness.
Inventors
- 👤 Michael Pepper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 07:52
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2607; G01R31/2621
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
104 words
A method of testing a field effect device for radiation hardness comprising the steps of: subjecting the field effect device to a low temperature environment; developing a first set of data points by measuring the conductance of the field effect device as a function of gate voltage at a first substrate bias; developing a second set of data points by measuring the conductance of the field effect device as a function of gate voltage at a second substrate bias, which is different from said first substrate bias; and comparing said first and second sets of data points to attain an assessment of radiation hardness.
Claim 2
Independent Claim
104 words
A method of testing a field effect device for radiation hardness comprising the steps of: subjecting the field effect device to a low temperature environment; developing a first set of data points by measuring the conductance of the field effect device as a function of gate voltage at a first substrate bias; developing a second set of data points by measuring the conductance of the field effect device as a function of gate voltage at a second substrate bias, which is different from said first substrate bias; and comparing said first and second sets of data points to attain an assessment of radiation hardness.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1, in which the temperature of said environment is approximately 77° K.
Claim 4
Dependent Claim
39 words
A method as claimed in claim 1, in which the measurement is effected at a temperature where the Fermi energy is extremely close to the majority carrier band edge and localization effects in the inversion layer are not important.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1, in which the temperature of said environment is typically less than approximately 50° K.
Claim 6
Dependent Claim
18 words
A method as claimed in claim 1, in which the temperature of said environment is approximately 4.2° K.
Claim 7
Dependent Claim
23 words
A method as claimed in claim 5, further including the step of light-irradiating said field effect device in order to increase response time.
References Cited (Backward Citations)
US4114096A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-02 | 1984-03-03 | 1984-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-02 | 1988-03-03 | 1988-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-02 | 1992-03-03 | 1992-09-02 | $7700.00 | Window Closed / Lapsed |