US4719418A
Expired / Lapsed
US
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Defect leakage screen system
Assignee: International Business Machines Corp
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Filing: 1985-02-19
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Granted: 1988-01-12
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Expires: 2005-02-19
Abstract
Abstract A test circuit or system is provided wherein data is stored in circuits or cells of an array or matrix with the use of conventional or normal operating voltages. Voltages at internal nodes of the circuits or cells are altered to magnitudes beyond the normal operating ranges, which includes significantly decreasing the offset voltage, for a short period of time and then the stored data is read out at normal voltages and currents and compared with the data written into the circuits or cells.
Inventors
- 👤 Roy C. Flaker
- 👤 Russell J. Houghton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:42
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C29/50016; G06; G06F; G06F2201/00; G06F2201/81
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
86 words
A test circuit for a cross-coupled transistor cell having first and second storage nodes with a given offset voltage therebetween storing a given digit of binary data comprising means for decreasing said offset voltage during a given period of time, a point of reference potential, means for increasing a voltage difference between said reference potential point and one of said nodes during said given period of time simultaneously with said offset decrease, and means for reading data from said cell after said given period of time.
Claim 2
Dependent Claim
86 words
A test circuit for a cross-coupled transistor cell having first and second storage nodes with a given offset voltage therebetween storing a given digit of binary data comprising means for decreasing said offset voltage during a given period of time, a point of reference potential, means for increasing a voltage difference between said reference potential point and one of said nodes during said given period of time simultaneously with said offset decrease, and means for reading data from said cell after said given period of time.
Claim 3
Dependent Claim
27 words
A test circuit as set forth in claim 1 wherein said means for decreasing said offset voltage includes means for decreasing a current flow through said cell.
Claim 4
Dependent Claim
21 words
A test circuit as set forth in claim 2 wherein said offset voltage decreasing means includes a standby current reference circuit.
Claim 5
Dependent Claim
26 words
A test circuit as set forth in claim 1 wherein said voltage difference increasing means includes an isolation region having a voltage varying terminal connected thereto.
Claim 6
Dependent Claim
40 words
A test circuit as set forth in claim 1 wherein said offset voltage decreasing means decreases said voltage during a first period of time and said data reading means reads data from said cell after said first period of time.
Claim 7
Dependent Claim
59 words
A test circuit as set forth in claim 1 further including a pair of bit lines, means for applying an operating voltage to said bit lines during a first period of time and means for applying a voltage to said bit lines during said given period of time having a magnitude significantly lower than that of said operating voltage.
Claim 8
Dependent Claim
123 words
A test circuit for a static memory cell having first and second storage nodes comprising a standby current reference circuit coupled to said cell, said circuit including means for passing current through said cell having a given magnitude during a first period of time and a significantly lower magnitude during a second period of time, a point of reference potential having a given voltage difference with respect to one of said storage nodes during said first given voltage differences during said second period of time when said current through said cell has said significantly lower magnitude, means for storing data in said cell during said first period of time, and means for reading data from said cell after said second period of time.
Claim 9
Dependent Claim
123 words
A test circuit for a static memory cell having first and second storage nodes comprising a standby current reference circuit coupled to said cell, said circuit including means for passing current through said cell having a given magnitude during a first period of time and a significantly lower magnitude during a second period of time, a point of reference potential having a given voltage difference with respect to one of said storage nodes during said first given voltage differences during said second period of time when said current through said cell has said significantly lower magnitude, means for storing data in said cell during said first period of time, and means for reading data from said cell after said second period of time.
Claim 10
Dependent Claim
76 words
A,test system for a static memory cell having first and second storage nodes comprising means for storing data in said cell during a first period of time, means for decreasing a current passing through said cell and simultaneosuly increasing a voltage difference between at least one of said storage nodes and a point of reference potential during a second period of time and means for reading data from said cell after said second period of time.
Claim 11
Dependent Claim
76 words
A,test system for a static memory cell having first and second storage nodes comprising means for storing data in said cell during a first period of time, means for decreasing a current passing through said cell and simultaneosuly increasing a voltage difference between at least one of said storage nodes and a point of reference potential during a second period of time and means for reading data from said cell after said second period of time.
Claim 12
Dependent Claim
29 words
A test system as set forth in claim 8 wherein said current decreasing means significantly reduces an offset voltage between said storage nodes during said second period of time.
Claim 13
Dependent Claim
38 words
A test system as set forth in claim 9 further including first and second bit lines connected to said cell and wherein said voltage difference increasing means lowers the voltage on at least one of said bit lines.
Claim 14
Dependent Claim
40 words
A test system as set forth in claim 10 further including an isolation region surrounding said cell and wherein said voltage difference increasing means increases the voltage difference between said isolation region and at least one of said storage nodes.
Claim 15
Dependent Claim
24 words
A test system as set forth in claim 11 further including a diode disposed between said isolation region and each of said storage nodes.
Claim 16
Dependent Claim
41 words
A test system as set forth in claim 12 wherein said diode has a junction defined by P type conductivity semiconductor substrate and N type conductivity semiconductor substrate and said point of reference potential is disposed on said P type substrate.
Claim 17
Dependent Claim
31 words
A test system as set forth in claim 10 wherein said cell includes at least one P-N junction disposed between one of said bit lines and one of said storage nodes.
Claim 18
Dependent Claim
24 words
A test system as set forth in claim 8 wherein said current decreasing means includes a standby current reference circuit coupled to said cell.
Claim 19
Dependent Claim
25 words
A test system as set forth in claim 8 wherein said voltage difference increasing means includes a bit line bias circuit coupled to said cell.
Claim 20
Dependent Claim
32 words
A test system as set forth in claim 15 wherein said current decreasing means further includes means for altering a voltage at a voltage supply source of said standby current reference circuit.
Claim 21
Dependent Claim
28 words
A test system as set forth in claim 17 wherein said voltage altering means lowers the voltage at said voltage supply source of said standby current reference circuit.
Claim 22
Dependent Claim
33 words
A test system as set forth in claim 16 wherein said voltage difference increasing means further includes means for altering a voltage at a voltage supply source of said bit line bias circuit.
Claim 23
Dependent Claim
28 words
A test system as set forth in claim 19 wherein said voltage altering means lowers the voltage at said voltage supply source of said bit line bias circuit.
Claim 24
Dependent Claim
26 words
A test system as set forth in claim 18 further including a diode connected between said point of reference potential and said standby current reference circuit.
Claim 25
Dependent Claim
28 words
A test system as set forth in claim 21 wherein said standby current reference circuit includes a resistor and said diode is arranged in parallel to said resistor.
Claim 26
Dependent Claim
38 words
A test system as set forth in claim 20 wherein said bit line bias circuit includes a resistor and at least one diode connected between said resistor and the voltage supply source of said bit line bias circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-11 | 1991-07-13 | 1992-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-11 | 1995-07-13 | 1996-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-11 | 1999-07-13 | 2000-01-12 | $7700.00 | Window Closed / Lapsed |