US4004222A
Expired / Lapsed
US
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Test system for semiconductor memory cell
Assignee: SEMI
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Filing: 1974-11-20
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Granted: 1977-01-18
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Expires: 1994-11-20
Abstract
Abstract This invention accelerates the leakage current from certain nodes of memory cells in static semiconductor memory to an extent whereby defective memory cells, which would not be detected without a considerable waiting period elapsing, are readily quickly detected.
Inventors
- 👤 Richard E. Gebhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 02:57
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G01; G01R; G01R31/00; G01R31/28; G01R31/316; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C2029/5006
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
83 words
In a system wherein a semiconductor memory is tested by writing a test pattern therein, and thereafter reading out the test pattern to determine the ability of the memory to store data, a method of substantially shortening the interval required between writing and reading the test pattern without reducing the accuracy of the test, comprising during a test, substantially increasing the leakage currents of the stray capacitances of the cells of said memory relative to the leakage currents that occur during ambient conditions.
Claim 2
Dependent Claim
83 words
In a system wherein a semiconductor memory is tested by writing a test pattern therein, and thereafter reading out the test pattern to determine the ability of the memory to store data, a method of substantially shortening the interval required between writing and reading the test pattern without reducing the accuracy of the test, comprising during a test, substantially increasing the leakage currents of the stray capacitances of the cells of said memory relative to the leakage currents that occur during ambient conditions.
Claim 3
Dependent Claim
43 words
A method as recited in claim 1, wherein said step of substantially increasing the leakage currents from the stray capacitances of said memory includes the step of elevating the temperature of said memory, above ambient temperature until the leakage currents are substantially increased.
Claim 4
Dependent Claim
44 words
The method as recited in claim 1, wherein said step of increasing the leakage currents from said stray capacitances includes the step of illuminating the storage cells of said memory with the light required to substantially increase the leakage currents from said stray capacitances.
Claim 5
Dependent Claim
38 words
A method of increasing the leakage currents as recited in claim 2 wherein said step of elevating the temperature of said memory comprises increasing the temperature of said memory to a temperature on the order of 80° C.
Claim 6
Dependent Claim
64 words
A method of increasing the leakage currents from said stray capacitances, as recited in claim 3, wherein the step of illuminating the storage cells of said memory includes, prior to said test, measuring the leakage current of said memory while increasing the light applied to said memory until the leakage current being measured has increased at least 100 times over the ambient leakage current.
Claim 7
Dependent Claim
28 words
In a system as recited in claim 1, wherein said leakage currents are increased on the order of 100 times the leakage currents that occur during ambient conditions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-18 | 1980-07-19 | 1981-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-18 | 1984-07-19 | 1985-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-18 | 1988-07-19 | 1989-01-18 | $7700.00 | Window Closed / Lapsed |