CMOS bus and transmission line driver having compensated edge rate control

Claim 2

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removing the discharge path at the end of the discharge time period, the discharge time period beginning when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, and the discharge time period having a length equal to a period of time necessary to decrease the gate-source voltage of the first n-channel transistor to a level just above its threshold voltage, the discharge circuit including first and second series connected field effect transistors (FET) coupled between the gate of the first n-channel transistor and ground that are switched into simultaneous conducting states for a length of time approximately equal to the discharge time period to provide the discharge path; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit having a third FET having a gate coupled to a gate of a fourth FET having a larger current conducting channel than a current conducting channel in the third FET in order to generate a current that increases in response to an increase in temperature.

Claim 3

A driver according to claim 1, wherein the discharge time period is approximately equal to a one logic gate delay time.

Claim 4

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removing the discharge path at the end of the discharge time period, the discharge time period beginning when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, and the discharge time period having a length equal to a period of time necessary to decrease the gate-source voltage of the first n-channel transistor to a level just above its threshold voltage; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the discharge circuit includes, second and third series connected n-channel transistors coupled between the gate of the first n-channel transistor and ground to provide a discharge path from the gate of the first n-channel transistor to ground; and switching means for switching the second and third n-channel transistors into simultaneous conducting states for a length of time approximately equal to the discharge time period.

Claim 5

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removing the discharge path at the end of the discharge time period, the discharge time period beginning when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, and the discharge time period having a length equal to a period of time necessary to decrease the gate-source voltage of the first n-channel transistor to a level just above its threshold voltage; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the discharge circuit includes, second and third series connected n-channel transistors coupled between the gate of the first n-channel transistor and ground to provide a discharge path from the gate of the first n-channel transistor to ground; and switching means for switching the second and third n-channel transistors into simultaneous conducting states for a length of time approximately equal to the discharge time period.

Claim 6

A driver according to claim 3, wherein the switching means comprises: a second inverter coupled between the input of the first inverter stage and the gate of the second n-channel transistor, the second inverter having a delay time period; wherein the input of the first inverter stage is coupled to the gate of the third n-channel transistor; and wherein the discharge time period is approximately equal to the delay time period of the second inverter.

Claim 7

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit having a first field effect transistor (FET) having a gate coupled to a gate of a second FET having a larger current conducting channel than a current conducting channel in the first FET in order to generate a current that increases in response to an increase in temperature; and a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period, the discharge circuit including third and fourth series connected FETs coupled between the gate of the first n-channel transistor and ground that are switched into simultaneous conducting states for a length of time approximately equal to the discharge time period to provide the discharge path.

Claim 8

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit having a first field effect transistor (FET) having a gate coupled to a gate of a second FET having a larger current conducting channel than a current conducting channel in the first FET in order to generate a current that increases in response to an increase in temperature; and a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period, the discharge circuit including third and fourth series connected FETs coupled between the gate of the first n-channel transistor and ground that are switched into simultaneous conducting states for a length of time approximately equal to the discharge time period to provide the discharge path.

Claim 9

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the temperature compensation circuit further includes, a fourth p-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a fifth n-channel transistor having its drain coupled to the gate of the first n-channel transistor; wherein the positive temperature coefficient current generation circuit adjusts the gate voltages of the fourth and fifth transistors to compensate for variations in temperature.

Claim 10

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the temperature compensation circuit further includes, a fourth p-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a fifth n-channel transistor having its drain coupled to the gate of the first n-channel transistor; wherein the positive temperature coefficient current generation circuit adjusts the gate voltages of the fourth and fifth transistors to compensate for variations in temperature.

Claim 11

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature; wherein the temperature compensation circuit includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a positive temperature coefficient current generation circuit for adjusting the gate voltages of the first p-channel and the second n-channel transistors to compensate for variations in temperature; wherein the positive temperature coefficient current generation circuit includes, a first field-effect transistor (FET); a second FET having a larger current conducting channel than the current conducting channel of the first FET, the second FET having its gate coupled to the gate of the first FET; a first resistor coupled between a first node that is common with the source of the first FET and a second node that is common with the source of the second FET; and current generating circuitry for generating and maintaining substantially equal drain currents in the first and second FETs.

Claim 12

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature; wherein the temperature compensation circuit includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a positive temperature coefficient current generation circuit for adjusting the gate voltages of the first p-channel and the second n-channel transistors to compensate for variations in temperature; wherein the positive temperature coefficient current generation circuit includes, a first field-effect transistor (FET); a second FET having a larger current conducting channel than the current conducting channel of the first FET, the second FET having its gate coupled to the gate of the first FET; a first resistor coupled between a first node that is common with the source of the first FET and a second node that is common with the source of the second FET; and current generating circuitry for generating and maintaining substantially equal drain currents in the first and second FETs.

Claim 13

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; and a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removing the discharge path at the end of the discharge time period, the discharge time period beginning when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, and the discharge time period having a length equal to a period of time necessary to decrease the gate-source voltage of the first n-channel transistor to a level just above its threshold voltage.

Claim 14

A driver for providing binary signals from a data system to a transmission line, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; and a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during a discharge time period and then removing the discharge path at the end of the discharge time period, the discharge time period beginning when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, and the discharge time period having a length equal to a period of time necessary to decrease the gate-source voltage of the first n-channel transistor to a level just above its threshold voltage.

Claim 15

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, the discharge circuit including first and second series connected field effect transistors (FET) coupled between the gate of the first n-channel transistor and ground that are switched into simultaneous conducting states for a length of time approximately equal to the one logic gate delay time period to provide the discharge path; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit having a third FET having a gate coupled to a gate of a fourth FET having a larger current conducting channel than a current conducting channel in the third FET in order to generate a current that increases in response to an increase in temperature.

Claim 16

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state, the discharge circuit including first and second series connected field effect transistors (FET) coupled between the gate of the first n-channel transistor and ground that are switched into simultaneous conducting states for a length of time approximately equal to the one logic gate delay time period to provide the discharge path; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit having a third FET having a gate coupled to a gate of a fourth FET having a larger current conducting channel than a current conducting channel in the third FET in order to generate a current that increases in response to an increase in temperature.

Claim 17

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the discharge circuit includes, second and third series connected n-channel transistors coupled between the gate of the first n-channel transistor and ground to provide a discharge path from the gate of the first n-channel transistor to ground; and switching means for switching the second and third n-channel transistors into simultaneous conducting states for approximately one logic gate delay time period.

Claim 18

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the discharge circuit includes, second and third series connected n-channel transistors coupled between the gate of the first n-channel transistor and ground to provide a discharge path from the gate of the first n-channel transistor to ground; and switching means for switching the second and third n-channel transistors into simultaneous conducting states for approximately one logic gate delay time period.

Claim 19

A driver according to claim 10, wherein the switching means comprises: a second inverter coupled between the input of the first inverter stage and the gate of the second n-channel transistor; and wherein the input of the first inverter stage is coupled to the gate of the third n-channel transistor.

Claim 20

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the temperature compensation circuit further includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; wherein the positive temperature coefficient current generation circuit adjusts the gate voltages of the first p-channel and second n-channel transistors to compensate for variations in temperature.

Claim 21

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature, wherein the temperature compensation circuit includes a positive temperature coefficient current generation circuit which generates a current that increases in response to an increase in temperature; wherein the temperature compensation circuit further includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; wherein the positive temperature coefficient current generation circuit adjusts the gate voltages of the first p-channel and second n-channel transistors to compensate for variations in temperature.

Claim 22

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature; wherein the temperature compensation circuit includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a positive temperature coefficient current generation circuit for adjusting the gate voltages of the first p-channel and second n-channel transistors to compensate for variations in temperature; wherein the positive temperature coefficient current generation circuit includes, a first field-effect transistor (FET); a second FET having a larger current conducting channel than the current conducting channel of the first FET, the second FET having its gate coupled to the gate of the first FET; a first resistor coupled between a first node that is common with the source of the first FET and a second node that is common with the source of the second FET; and current generating circuitry for generating and maintaining substantially equal drain currents in the first and second FETs.

Claim 23

A driver for providing binary signals from a data system to a transmission line that has its ends terminated in its characteristic impedance, the driver comprising: a first n-channel transistor having its drain coupled to the transmission line and its source coupled to ground, the channel of the first n-channel transistor having a width that is plural orders of magnitude greater than its length; a first inverter stage for conducting current from a first voltage supply to the gate of the first n-channel transistor in order to switch the first n-channel transistor into a conductive state and for conducting current from the gate of the first n-channel transistor to ground in order to switch the first n-channel transistor into a non-conductive state; a discharge circuit for providing a discharge path from the gate of the first n-channel transistor to ground during an approximately one logic gate delay time period that begins when the first inverter stage receives a binary signal commanding it to switch the first n-channel transistor from the conductive state to the non-conductive state; and a temperature compensation circuit coupled to the first inverter stage for adjusting the level of current conducted to the gate of the first n-channel transistor and the level of current conducted from the gate of the first n-channel transistor to compensate for variations in temperature; wherein the temperature compensation circuit includes, a first p-channel transistor having its drain coupled to the gate of the first n-channel transistor; a second n-channel transistor having its drain coupled to the gate of the first n-channel transistor; and a positive temperature coefficient current generation circuit for adjusting the gate voltages of the first p-channel and second n-channel transistors to compensate for variations in temperature; wherein the positive temperature coefficient current generation circuit includes, a first field-effect transistor (FET); a second FET having a larger current conducting channel than the current conducting channel of the first FET, the second FET having its gate coupled to the gate of the first FET; a first resistor coupled between a first node that is common with the source of the first FET and a second node that is common with the source of the second FET; and current generating circuitry for generating and maintaining substantially equal drain currents in the first and second FETs.