Abstract A method of producing a MESFET, and the MESFET formed by the method, which includes forming a refractory metal gate structure on an active layer formed in or on a semiconductor substrate. Source and drain regions are formed adjacent the gate structure. An insulating film is deposited over the partly formed structure to form a film portion on the semiconductor substrate which is separated from further film portions formed over the source and drain regions. A flattening resist is deposited over the insulating film and etched to expose only the film portion on the gate structure, while the gate structure itself and the resist protects the film portions on the source and drain regions. The film portion over the gate structure can thus be removed without damage to the gate structure or the remainder of the insulting film. A low resistance metal is patterned and deposited over the gate structure and overlies, in part, at least a part of the insulating film which remains over the source and drain regions. The gate structure can be single metal layer or can be a T-shaped structure formed of two refractory metal layers. The process produces with increased yield and more consistent properties in that the danger of attacking the refractory metal gate structure during operations succeeding its formation is significantly reduced.
A semiconductor device comprising: a semiconductor substrate having a T-shaped gate structure formed on said semiconductor substrate with source and drain regions formed on opposite sides of the gate structure, said gate structure formed from at least two refractory metal layers formed on one another with the length of the lower layer being narrower than the length of the upper layer, the upper layer having a thickness which is substantially less than the thickness of the lower layer; an insulating film formed on said semiconductor substrate adjacent to and abutting at least a portion of said gate structure, the insulating film being sufficiently thin to abut the gate structure by projecting below the upper layer thereof to contact the lower layer thereof; a low resistance metal formed on the upper layer of said T-shaped gate structure, overlying and supported by a portion of the insulating film over the source and drain regions; and said upper layer being formed from a refractory metal and said lower layer being formed from a refractory metal silicide.
Claim 2
Dependent Claim
173 words
A semiconductor device comprising: a semiconductor substrate having a T-shaped gate structure formed on said semiconductor substrate with source and drain regions formed on opposite sides of the gate structure, said gate structure formed from at least two refractory metal layers formed on one another with the length of the lower layer being narrower than the length of the upper layer, the upper layer having a thickness which is substantially less than the thickness of the lower layer; an insulating film formed on said semiconductor substrate adjacent to and abutting at least a portion of said gate structure, the insulating film being sufficiently thin to abut the gate structure by projecting below the upper layer thereof to contact the lower layer thereof; a low resistance metal formed on the upper layer of said T-shaped gate structure, overlying and supported by a portion of the insulating film over the source and drain regions; and said upper layer being formed from a refractory metal and said lower layer being formed from a refractory metal silicide.
Claim 3
Dependent Claim
13 words
The device of claim 1 wherein said semiconductor substrate is formed from GaAs.
Claim 4
Dependent Claim
13 words
The device of claim 1 wherein said semiconductor substrate is formed from InP.
Claim 5
Dependent Claim
19 words
The device of claim 1 wherein said refractory metal is tungsten and said refractory metal silicide is tungsten silicide.