Manufacture of gallium arsenide schottky barrier junction gate type field effect transistor

Abstract

Abstract PURPOSE:To increase a mutual conductance by increasing the thickness of an insulating film of a field used as a mask of selectively epitaxial growth from the width of an insulating film of the side of a gate electrode. CONSTITUTION:An insulating film 14 is coated on an N-type GaAs operating layer 12 and a high melting point metal silicide layer 13, and with a photoresist 15 formed with a hole on the surface of an SiO2 of a region to be removed as a mask the film 14 is removed by isotropically etching. Then, after the photoresist 15 is removed, an insulating film 16 is coated on the entire surface. Then, the film 16 is anisotropically etched, and an SiO2 film 17 remains on the side of the layer 13. Then, with the layer 13 and the films 14, 17 as masks a high density N-type GaAs layer 18 is selectively epitaxially grown on the surface of an N-type GaAs operating layer, an AuGe/Ni layer 19 is formed on the layer 18, and alloyed to form ohmic electrodes. Thus, the thickness of the insulating film of the field can be increased in thickness as compared with the width of the insulating film of the gate electrode side, thereby manufacturing a transistor having large mutual conductance and high reliability.

Inventors

• 👤 Fumiaki Katano
• 👤 片野　史明

Bibliographic Details