Method of producing the gate electrode of a field effect transistor

Claim 1

A method of forming a self-aligned gate electrode of a field effect transistor, consisting essentially of the steps of: forming a resist pattern on a first portion of a semiconductor substrate by a lithography process; forming an ion-implanted layer in a second portion of said substrate not covered with said resist pattern, by ion implantation into said substrate; forming an insulating film on said substrate and said resist pattern by electron cyclotron resonance plasma chemical vapor deposition; removing said resist pattern and a part of said insulating film on said resist pattern by lifting off to thereby leave an insulating pattern with an opening at said second portion; annealing said substrate to activate said ion-implanted layer; and forming a gate electrode on said opening by a spacer lift-off process.

Claim 2

A method of forming a self-aligned gate electrode of a field effect transistor, consisting essentially of the steps of: forming a resist pattern on a first portion of a semiconductor substrate by a lithography process; forming an ion-implanted layer in a second portion of said substrate not covered with said resist pattern, by ion implantation into said substrate; forming an insulating film on said substrate and said resist pattern by electron cyclotron resonance plasma chemical vapor deposition; removing said resist pattern and a part of said insulating film on said resist pattern by lifting off to thereby leave an insulating pattern with an opening at said second portion; annealing said substrate to activate said ion-implanted layer; and forming a gate electrode on said opening by a spacer lift-off process.

Claim 11

A method of producing a self-aligned gate electrode of a field effect transistor, comprising the steps of: forming a resist pattern on a semiconductor substrate at a first location, corresponding to a gate region; forming a first insulating film on said substrate and on said resist pattern by electron cyclotron resonance plasma chemical vapor deposition; forming a second insulating film on said first insulating film, and on exposed edges of said resist pattern; removing said second insulating film except for said part of said second insulating film on said exposed edges of said resist patter; forming a source region and a drain region for said field effect transistor by ion implantation into said substrate with said resist pattern and said first and second insulating films in place; then removing said part of said second insulating film; then applying a moderate dosage and energy level ion implantation to said substrate; removing said resist pattern and said insulating film on said resist pattern by lifting-off to thereby form a pattern on said first insulating film having an opening; and forming a self-aligned gate electrode on said opening by spacer lift-off.

Claim 12

A method of producing a self-aligned gate electrode of a field effect transistor, comprising the steps of: forming a resist pattern on a semiconductor substrate at a first location, corresponding to a gate region; forming a first insulating film on said substrate and on said resist pattern by electron cyclotron resonance plasma chemical vapor deposition; forming a second insulating film on said first insulating film, and on exposed edges of said resist pattern; removing said second insulating film except for said part of said second insulating film on said exposed edges of said resist patter; forming a source region and a drain region for said field effect transistor by ion implantation into said substrate with said resist pattern and said first and second insulating films in place; then removing said part of said second insulating film; then applying a moderate dosage and energy level ion implantation to said substrate; removing said resist pattern and said insulating film on said resist pattern by lifting-off to thereby form a pattern on said first insulating film having an opening; and forming a self-aligned gate electrode on said opening by spacer lift-off.