Method of making a cubic boron nitride bipolar transistor

Claim 1

A method for forming a bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and about 700° C.; providing a boron nitride target in spaced relationship to said silicon substrate; laser ablating said boron nitride target so as to evaporate said boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of boron nitride which is in epitaxial registry with said silicon substrate, said first thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said first thin film layer of boron nitride to be an electrically conductive n-type collector region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said collector region to form a second thin film layer of boron nitride which is epitaxial with respect to said collector region, said second thin film layer of boron nitride also being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said second thin film layer of boron nitride so as to form an electrically conductive p-type base region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said base region to form a third thin film layer of boron nitride which is epitaxial with respect to said base region, said third thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said third thin film layer of boron nitride so as to form an electrically conductive n-type emitter region; and forming electrical contacts onto said silicon substrate, onto said base region and onto said emitter region, such that an n-p-n bipolar transistor useful for high temperature applications is provided.

Claim 2

A method for forming a bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and about 700° C.; providing a boron nitride target in spaced relationship to said silicon substrate; laser ablating said boron nitride target so as to evaporate said boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of boron nitride which is in epitaxial registry with said silicon substrate, said first thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said first thin film layer of boron nitride to be an electrically conductive n-type collector region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said collector region to form a second thin film layer of boron nitride which is epitaxial with respect to said collector region, said second thin film layer of boron nitride also being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said second thin film layer of boron nitride so as to form an electrically conductive p-type base region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said base region to form a third thin film layer of boron nitride which is epitaxial with respect to said base region, said third thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said third thin film layer of boron nitride so as to form an electrically conductive n-type emitter region; and forming electrical contacts onto said silicon substrate, onto said base region and onto said emitter region, such that an n-p-n bipolar transistor useful for high temperature applications is provided.

Claim 4

A method for forming a bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and 700° C.; providing a boron nitride target in proximate relationship with said silicon substrate; laser ablating said boron nitride target so as to evaporate said boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of boron nitride which is in epitaxial registry with said silicon substrate, said first thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said first thin film layer of boron nitride to be an electrically conductive p-type collector region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said collector region to form a second thin film layer of boron nitride which is epitaxial with respect to said collector region, said second thin film layer of boron nitride also being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said second thin film layer of boron nitride so as to form an electrically conductive n-type base region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said base region to form a third thin film layer of boron nitride which is epitaxial with respect to said base region, said third thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said third film layer of boron nitride so as to form an electrically conductive p-type emitter region; and forming electrical contacts onto said silicon substrate, onto said base region and onto said emitter region, such that a p-n-p bipolar transistor useful for high temperature applications is provided.

Claim 5

A method for forming a bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and 700° C.; providing a boron nitride target in proximate relationship with said silicon substrate; laser ablating said boron nitride target so as to evaporate said boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of boron nitride which is in epitaxial registry with said silicon substrate, said first thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said first thin film layer of boron nitride to be an electrically conductive p-type collector region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said collector region to form a second thin film layer of boron nitride which is epitaxial with respect to said collector region, said second thin film layer of boron nitride also being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said second thin film layer of boron nitride so as to form an electrically conductive n-type base region; laser ablating said boron nitride target so as to evaporate said boron nitride material onto said base region to form a third thin film layer of boron nitride which is epitaxial with respect to said base region, said third thin film layer of boron nitride being essentially characterized by a cubic crystallographic structure throughout, and appropriately doping said third film layer of boron nitride so as to form an electrically conductive p-type emitter region; and forming electrical contacts onto said silicon substrate, onto said base region and onto said emitter region, such that a p-n-p bipolar transistor useful for high temperature applications is provided.

Claim 7

A method for forming an n-p-n bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and about 700° C.; providing a first boron nitride target in proximate relationship with said silicon substrate; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from a column VI element, so as to evaporate said first doped boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of n-type boron nitride which is in epitaxial registry with said silicon substrate and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive n-type collector region; laser ablating a second boron nitride target which has been appropriately doped with an element chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said second doped boron nitride material onto a surface of said collector region to form a second thin film layer of cubic boron nitride which is epitaxial with respect to said collector region and which is essentially characterized by a cubic crystallographic structure throughout, and so as to form an electrically conductive p-type base region; laser ablating said first boron nitride target which has been appropriately doped with silicon or a column VI element, so as to evaporate said first doped boron nitride material onto said base region and form a third thin film layer of cubic boron nitride which is epitaxial with respect to said base region and which is also essentially characterized by a cubic crystallographic structure throughout, and so as to form an electrically conductive n-type emitter region throughout said third layer of boron nitride; and forming electrical contacts to said collector region, to said base region and to said emitter region, such that an n-p-n bipolar transistor useful for high temperature applications is provided.

Claim 8

A method for forming an n-p-n bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and about 700° C.; providing a first boron nitride target in proximate relationship with said silicon substrate; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from a column VI element, so as to evaporate said first doped boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of n-type boron nitride which is in epitaxial registry with said silicon substrate and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive n-type collector region; laser ablating a second boron nitride target which has been appropriately doped with an element chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said second doped boron nitride material onto a surface of said collector region to form a second thin film layer of cubic boron nitride which is epitaxial with respect to said collector region and which is essentially characterized by a cubic crystallographic structure throughout, and so as to form an electrically conductive p-type base region; laser ablating said first boron nitride target which has been appropriately doped with silicon or a column VI element, so as to evaporate said first doped boron nitride material onto said base region and form a third thin film layer of cubic boron nitride which is epitaxial with respect to said base region and which is also essentially characterized by a cubic crystallographic structure throughout, and so as to form an electrically conductive n-type emitter region throughout said third layer of boron nitride; and forming electrical contacts to said collector region, to said base region and to said emitter region, such that an n-p-n bipolar transistor useful for high temperature applications is provided.

Claim 10

A method for forming a p-n-p bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and 700° C.; providing a first boron nitride target in proximate relationship with said silicon substrate; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said first doped boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of cubic boron nitride which is in epitaxial registry with said silicon substrate and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive p-type collector region; laser ablating a second boron nitride target which has been appropriately doped with silicon or a column VI element, so as to evaporate said second doped boron nitride material onto a surface of said collector region to form a second thin film layer of cubic boron nitride which is epitaxial with respect to said collector region and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive n-type base region; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said first doped boron nitride material onto said base region to form a third thin film layer of cubic boron nitride which is epitaxial with respect to said base region and which is also essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive p-type emitter region throughout said third layer of boron nitride; and forming electrical contacts to said collector region, to said base region and to said emitter region, such that a p-n-p bipolar transistor useful for high temperature applications is provided.

Claim 11

A method for forming a p-n-p bipolar transistor suitable for use at high temperatures comprising the following steps: heating a silicon substrate oriented along the [100] crystallographic plane to a temperature between about 400° C. and 700° C.; providing a first boron nitride target in proximate relationship with said silicon substrate; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said first doped boron nitride material onto a surface of said heated silicon substrate to form a first thin film layer of cubic boron nitride which is in epitaxial registry with said silicon substrate and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive p-type collector region; laser ablating a second boron nitride target which has been appropriately doped with silicon or a column VI element, so as to evaporate said second doped boron nitride material onto a surface of said collector region to form a second thin film layer of cubic boron nitride which is epitaxial with respect to said collector region and which is essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive n-type base region; laser ablating said first boron nitride target which has been appropriately doped with a material chosen from the group consisting of beryllium, magnesium and lithium, so as to evaporate said first doped boron nitride material onto said base region to form a third thin film layer of cubic boron nitride which is epitaxial with respect to said base region and which is also essentially characterized by a cubic crystallographic structure throughout, so as to form an electrically conductive p-type emitter region throughout said third layer of boron nitride; and forming electrical contacts to said collector region, to said base region and to said emitter region, such that a p-n-p bipolar transistor useful for high temperature applications is provided.