US4980730A
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Light emitting element of cubic boron nitride
Assignee: National Institute for Materials Science
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Filing: 1989-08-03
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Granted: 1990-12-25
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Expires: 2009-08-03
Abstract
Abstract A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.
Inventors
- 👤 Osamu Mishima
- 👤 Shinobu Yamaoka
- 👤 Osamu Fukunaga
- 👤 Junzo Tanbaka
- 👤 Koh Era
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:59
CPC Classifications
C; C30; C30B; C30B9/00; B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; C30B29/00; C30B29/10; C30B29/38; H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10H20/85; H10H20/851; H10H20/8511; H10H20/8512; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/0645; B01J2203/065; B01J2203/066; B01J2203/0675; B01J2203/068
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
85 words
A light emitting element composed essentially of a cubic boron nitride crystal having a p-n junction which emits ultraviolet light, wherein the crystal comprises a p-type or n-type cubic boron nitride semiconductor crystal substrate, a cubic boron nitride semiconductor layer of n-type or p-type which is different from the type of the substrate, formed on the substrate, and a p-n junction between the substrate and the layer, wherein said n-type substrate and n-type layer contain silicon, and said p-type substrate and p-type layer contain beryllium.
Claim 2
Dependent Claim
85 words
A light emitting element composed essentially of a cubic boron nitride crystal having a p-n junction which emits ultraviolet light, wherein the crystal comprises a p-type or n-type cubic boron nitride semiconductor crystal substrate, a cubic boron nitride semiconductor layer of n-type or p-type which is different from the type of the substrate, formed on the substrate, and a p-n junction between the substrate and the layer, wherein said n-type substrate and n-type layer contain silicon, and said p-type substrate and p-type layer contain beryllium.
Claim 3
Dependent Claim
35 words
The light emitting element according to claim 1, wherein the substrate is made of a beryllium-containing p-type cubic boron nitride semiconductor crystal and the layer is made of a silicon-containing n-type cubic boron nitride semiconductor.
Claim 4
Dependent Claim
22 words
The light emitting element according to claim 2, wherein a phosphor is coated on the p-n junction or on the n-type layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |