US4832986A
Expired / Lapsed
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Process for metal nitride deposition
Assignee: University of Minnesota System
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Filing: 1987-07-06
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Granted: 1989-05-23
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Expires: 2007-07-06
Abstract
Abstract A method for forming metal nitride films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a dialkyl(Group III metal) azide, so as to deposit a film of the corresponding metal nitride on the surface of a substrate.
Inventors
- 👤 Wayne L. Gladfelter
- 👤 Daniel R. Mantell
- 👤 John F. Evans
- 👤 Roland K. Schulze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:02
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/22; C03C17/225; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/281; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
70 words
A method for applying a metal nitride film to the surface of a substrate comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising an azide of the formula [(C 1 -C 5 )alkyl] 2 MN 3 , wherein M is a Group III metal, so as to deposit a film of a metal nitride, MN, wherein M is the Group III metal, on said surface.
Claim 2
Independent Claim
70 words
A method for applying a metal nitride film to the surface of a substrate comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising an azide of the formula [(C 1 -C 5 )alkyl] 2 MN 3 , wherein M is a Group III metal, so as to deposit a film of a metal nitride, MN, wherein M is the Group III metal, on said surface.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein M is Al, Ga or In.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein the azide is (C 1 -C 5 ) 2 AlN 3 .
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein the azide is decomposed at about 400°-800° C., at a pressure of no more than about 10 -3 torr.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein the substrate comprises silicon, platinum, SnO 2 , glass, Al 2 O 3 or GaAs.
Claim 7
Dependent Claim
36 words
The method of claim 1 wherein said azide vapor is formed by evaporating a liquid or solid azide at a temperature of about 25°-85° C. at a pressure of no more than about 10 -3 torr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-22 | 1992-11-21 | 1993-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-22 | 1996-11-21 | 1997-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-22 | 2000-11-21 | 2001-05-23 | $7700.00 | Window Closed / Lapsed |