US4565741A
Expired / Lapsed
US
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Boron nitride film and process for preparing same
Assignee: FUTABA DENSHI KOGYO KK 629 OSHIBA MOBARA-SHI CHIBA-KEN JAPAN
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Filing: 1984-02-28
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Granted: 1986-01-21
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Expires: 2004-02-28
Abstract
Abstract A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.
Inventors
- 👤 Kiyoshi Morimoto
- 👤 Toshinori Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; C; C23; C23C; C23C14/00; C23C14/0021; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3251; H10P14/3258; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
46 words
A boron nitride film grown on the surface of a substrate by an ionized cluster beam deposition process to be orientated to a predetermined axis of said film, wherein said substrate is formed of an amorphous insulating material, said film being C-axis oriented on said substrate.
Claim 2
Dependent Claim
46 words
A boron nitride film grown on the surface of a substrate by an ionized cluster beam deposition process to be orientated to a predetermined axis of said film, wherein said substrate is formed of an amorphous insulating material, said film being C-axis oriented on said substrate.
Claim 3
Dependent Claim
82 words
A boron nitride film as defined in claim 1, wherein ionized beam cluster deposition process comprises: heating boride charged in a closed-type crucible having at least one injection nozzle to form boron vapor; ejecting said boron vapor through said nozzle into a nitrogen atmosphere having a pressure below 10 -2 Torr and ionizing at least a part thereof; and impinging said ionized boron vapor on the surface of said substrate together with nitrogen to form a boron nitride film on said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-01-20 | 1989-07-22 | 1990-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-01-20 | 1993-07-22 | 1994-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-01-20 | 1997-07-22 | 1998-01-21 | $7700.00 | Window Closed / Lapsed |