Patent US4983538A successfully refreshed from Google Patents.
US4983538A
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Method for fabricating a silicon carbide substrate
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1988-11-16
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Granted: 1991-01-08
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Expires: 2008-11-16
Abstract
Abstract Two methods for fabricating semiconductor substrate having a SOI structure by β-SiC, that is β-SiC on insulator structure, are disclosed. In the first method, two substrates are prepared, the first substrate is silicon coated by SiO 2 , the second substrate is silicon on which β-SiC is hereto-epitaxially grown. These substrates are bonded to each other by heating. During the heating process, anodic bonding may be applied. Then, the bonded substrate is ethced or mechanically polished off from the side of the second substrate, to expose the β-SiC layer. In the second method, β-SiC is grown on a silicon substrate. The surface of the substrate is coated with SiO 2 , and then, polysilicon or poly-SiC is deposited on the surface of the β-SiC side. The substrate is then etched or mechanically polished from the side of the silicon substrate to expose the β-SiC.
Inventors
- 👤 Hiroshi Gotou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:39
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10D; H10D12/00; H10D12/01; H10D12/031; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10W; H10W10/00; H10W10/01; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S148/148
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
127 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; (b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating a surface of said first substrate with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said first substrate and said second substrate together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer.
Claim 2
Independent Claim
127 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; (b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating a surface of said first substrate with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said first substrate and said second substrate together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer.
Claim 3
Dependent Claim
30 words
A method for fabricating a semiconductor substrate as set forth in claim 1, wherein said coating step comprises coating a surface of said first substrate with a silicon dioxide layer.
Claim 4
Dependent Claim
19 words
A method for fabricating a semiconductor substrate as set forth in claim 1, wherein said inert gas is nitrogen.
Claim 5
Dependent Claim
28 words
A method for fabricating a semiconductor substrate as set forth in claim 1, wherein said bonding step further comprises applying electric potential between said first and second substrates.
Claim 6
Dependent Claim
20 words
A method for fabricating a semiconductor substrate as set forth in claim 1, wherein said first semiconductor material is silicon.
Claim 7
Dependent Claim
21 words
A method for fabricating a semiconductor substrate as set forth in claim 1, wherein said first semiconductor material is silicon carbide.
Claim 8
Independent Claim
132 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating a surface of said second substrate and beta type silicon carbide layer with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said first substrate and second substrate together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer.
Claim 9
Independent Claim
132 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating a surface of said second substrate and beta type silicon carbide layer with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said first substrate and second substrate together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer.
Claim 10
Dependent Claim
22 words
A method for fabricating a semiconductor substrate as set forth in claim 7, wherein said insulator layer is a silicon dioxide layer.
Claim 11
Dependent Claim
19 words
A method for fabricating a semiconductor substrate as set forth in claim 7, wherein said inert gas is nitrogen.
Claim 12
Dependent Claim
29 words
A method for fabricating a semiconductor substrate as set forth in claim 7, wherein said bonding step further comprises applying an electric potential between said first and second substrates.
Claim 13
Dependent Claim
20 words
A method for fabricating a semiconductor substrate as set forth in claim 7, wherein said first semiconductor material is silicon.
Claim 14
Dependent Claim
21 words
A method for fabricating a semiconductor substrate as set forth in claim 7, wherein said first semiconductor material is silicon carbide.
Claim 15
Independent Claim
131 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; (b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating said first substrate, second substrate and beta type silicon carbide layer with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said coated first and second substrates together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer
Claim 16
Independent Claim
131 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) preparing a first substrate made of a first semiconductor material, and a second substrate made of silicon single crystal; (b) forming a layer of beta type silicon carbide single crystal on a surface of said second substrate; (c) coating said first substrate, second substrate and beta type silicon carbide layer with an insulator layer; (d) stacking said second substrate on said first substrate juxtaposing said beta type silicon carbide layer to said first substrate; (e) bonding said coated first and second substrates together by heating in an inert gas ambient; and (f) removing said second substrate to expose said beta type silicon carbide layer
Claim 17
Dependent Claim
22 words
A method for fabricating a semiconductor substrate as set forth in claim 13, wherein said insulator layer is made of silicon dioxide.
Claim 18
Dependent Claim
20 words
A method for fabricating a semiconductor substrate as set forth in claim 13, wherein said inert gas gas is nitrogen.
Claim 19
Dependent Claim
27 words
A method for fabricating semiconductor substrate as set forth in claim 13, wherein said bonding step further comprises applying electric potential between said first and second substrates.
Claim 20
Dependent Claim
20 words
A method for fabricating a semiconductor substrate as set forth in claim 13, wherein said first semiconductor material is silicon.
Claim 21
Dependent Claim
51 words
A method for fabricating a semiconductor substrate as set forth in claim 13, further comprising a step of further coating said second substrate and beta type silicon carbide layer with phospholsilicate glass, after coating said first substrate, second substrate and beta silicon carbide layer with an insulator layer, and before stacking.
Claim 22
Dependent Claim
22 words
A method for fabricating a semiconductor substrate as set forth in claim 18, wherein said insulator layer is made of silicon dioxide.
Claim 23
Dependent Claim
19 words
A method for fabricating a semiconductor substrate as set forth in claim 18, wherein said inert gas is nitrogen.
Claim 24
Dependent Claim
27 words
A method for fabricating semiconductor substrate as set forth in claim 18, wherein said bonding step further comprises applying electric potential between said first and second substrates.
Claim 25
Dependent Claim
20 words
A method for fabricating a semiconductor substrate as set forth in claim 14, wherein said first semiconductor material is silicon.
Claim 26
Dependent Claim
21 words
A method for fabricating a semiconductor substrate as set forth in claim 14, wherein said first semiconductor material is silicon carbide.
Claim 27
Dependent Claim
21 words
A method for fabricating a semiconductor substrate as set forth in claim 14, wherein said first semiconductor material is silicon carbide.
Claim 28
Independent Claim
104 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) forming a layer of beta type silicon carbide crystal on a surface of a silicon single crystal; (b) coating the surface of said silicon substrate and beta type silicon carbide layer with an insulator layer; (c) depositing a material selected from the group consisting of polycrystalline silicon and polycrystalline silicon carbide on a beta type silicon carbide coated side of said silicon substrate; and (d) removing said silicon substrate to expose said beta type silicon carbide layer.
Claim 29
Independent Claim
104 words
A method for fabricating a semiconductor substrate having a semiconductor on insulator structure, said semiconductor being beta type silicon carbide, said method comprising the steps of: (a) forming a layer of beta type silicon carbide crystal on a surface of a silicon single crystal; (b) coating the surface of said silicon substrate and beta type silicon carbide layer with an insulator layer; (c) depositing a material selected from the group consisting of polycrystalline silicon and polycrystalline silicon carbide on a beta type silicon carbide coated side of said silicon substrate; and (d) removing said silicon substrate to expose said beta type silicon carbide layer.
Claim 30
Dependent Claim
22 words
A method for fabricating a semiconductor substrate as set forth in claim 25, wherein said insulator layer is made of silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-07 | 1994-07-09 | 1995-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-07 | 1998-07-09 | 1999-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-07 | 2002-07-09 | 2003-01-08 | $7700.00 | Window Closed / Lapsed |