US4855254A
Expired / Lapsed
US
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Method of growing a single crystalline β-SiC layer on a silicon substrate
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1988-12-13
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Granted: 1989-08-08
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Expires: 2008-12-13
Abstract
Abstract A single crystalline silicon carbide (β-SiC) layer having a thickness greater than 1 μm is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800° to 1000° C., preferable in a range from 810° to 850° C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 Å is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850° to 950° C. In this process, a single crystalline β-SiC layer can be grown on the buffer layer, and a thickness of a few μm for the grown β-SiC layer can be expected.
Inventors
- 👤 Takashi Eshita
- 👤 Fumitake Mieno
- 👤 Yuji Furumura
- 👤 Kikuo Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:50
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/148
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
129 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate, said method comprising the following steps of: (a) providing said silicon substrate in a reactor chamber, (b) reducing a pressure inside said reactor chamber to a subatmospheric level, (c) flowing a first mixed gas containing acetylene into said reactor chamber, (d) heating said silicon substrate at a temperature between 800° and 1000° C., whereby a buffer layer of carbonized silicon is grown on said silicon substrate, (e) stopping said first mixed gas and flowing a second mixed gas containing hydrocarbon and chlorosilane gases into said reactor chamber, and (f) heating said silicon substrate at a temperature lower than 1000° C., whereby said single crystalline silicon carbide (β-SiC) layer is grown on said buffer layer.
Claim 2
Independent Claim
129 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate, said method comprising the following steps of: (a) providing said silicon substrate in a reactor chamber, (b) reducing a pressure inside said reactor chamber to a subatmospheric level, (c) flowing a first mixed gas containing acetylene into said reactor chamber, (d) heating said silicon substrate at a temperature between 800° and 1000° C., whereby a buffer layer of carbonized silicon is grown on said silicon substrate, (e) stopping said first mixed gas and flowing a second mixed gas containing hydrocarbon and chlorosilane gases into said reactor chamber, and (f) heating said silicon substrate at a temperature lower than 1000° C., whereby said single crystalline silicon carbide (β-SiC) layer is grown on said buffer layer.
Claim 3
Dependent Claim
36 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said hydrocarbon gas in step (e) is selected from a group of propane and acetylene gases.
Claim 4
Dependent Claim
36 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said chlorosilane gas in step (e) is selected from a group of trichlorosilane and dichlorosilane gases.
Claim 5
Dependent Claim
35 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said silicon substrate has a surface orientation of 0.5° to 10° off (111) toward [211].
Claim 6
Dependent Claim
43 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said step (d) of growing said buffer layer continues until said buffer layer having a thickness from 60 to 100 angstroms is obtained.
Claim 7
Dependent Claim
38 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said temperature of the silicon substrate in step (d) is in a range from 810° to 850° C.
Claim 8
Dependent Claim
38 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said temperature of the silicon substrate in step (f) is in a range between 850° to 950° C.
Claim 9
Dependent Claim
46 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said first mixed gas in step (c) contains a hydrogen gas and a mixing ratio of said hydrogen gas to acetylene gas is greater than 10.
Claim 10
Dependent Claim
37 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein a mixing ratio of said chlorosilane gas to hydrocarbon gas in step (e) is greater than 30.
Claim 11
Dependent Claim
48 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein said second mixed gas in step (e) contains a hydrogen gas and a mixing ratio of said hydrogen gas to other gases put together is greater than 10.
Claim 12
Dependent Claim
50 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate according to claim 1, wherein the growing process of said single crystalline silicon carbide (β-SiC) layer in steps (e) and (f) continues until said β-SiC layer having a thickness greater than 1 μm is obtained.
Claim 13
Independent Claim
160 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate, said method comprising the following steps of: (a) providing said silicon substrate in a reactor chamber, (b) reducing a pressure inside said reactor chamber to a subatmospheric level, (c) flow a hydrogen gas into said reactor chamber, (d) heating said silicon substrate at a temperature between 800° and 1000° C., whereby a surface of said silicon substrate is cleaned, (e) flowing a first mixed gas containing acetylene into said reactor chamber, (f) heating said silicon substrate at a temperature between 80° and 1000° C., whereby a buffer layer of carbonized silicon is grown on said silicon substrate, (g) stopping said first mixed gas and flowing a second mixed gas containing hydrocarbon and chlorosilane gases into said reactor chamber, and (h) heating said silicon substrate at a temperature lower than 1000° C., whereby said single crystalline silicon carbide (β-SiC) layer is grown on said buffer layer.
Claim 14
Independent Claim
160 words
A method of growing a single crystalline silicon carbide (β-SiC) layer on a silicon substrate, said method comprising the following steps of: (a) providing said silicon substrate in a reactor chamber, (b) reducing a pressure inside said reactor chamber to a subatmospheric level, (c) flow a hydrogen gas into said reactor chamber, (d) heating said silicon substrate at a temperature between 800° and 1000° C., whereby a surface of said silicon substrate is cleaned, (e) flowing a first mixed gas containing acetylene into said reactor chamber, (f) heating said silicon substrate at a temperature between 80° and 1000° C., whereby a buffer layer of carbonized silicon is grown on said silicon substrate, (g) stopping said first mixed gas and flowing a second mixed gas containing hydrocarbon and chlorosilane gases into said reactor chamber, and (h) heating said silicon substrate at a temperature lower than 1000° C., whereby said single crystalline silicon carbide (β-SiC) layer is grown on said buffer layer.
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