US4601779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a thin silicon-on-insulator layer
Assignee: International Business Machines Corp
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Filing: 1985-06-24
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Granted: 1986-07-22
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Expires: 2005-06-24
Abstract
Abstract A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.
Inventors
- 👤 John R. Abernathey
- 👤 Jerome B. Lasky
- 👤 Larry A. Nesbit
- 👤 Thomas O. Sedgwick
- 👤 Scott Stiffler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:29
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10P14/00; H10P14/60; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
118 words
A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures can be subsequently formed, comprising the steps of: forming layer of silicon upon a silicon substrate; implanting ions into said silicon layer in order to form a buried layer therein, said buried layer having etch characteristics which differ from those of said silicon layer; bonding said silicon layer to a mechanical substrate; removing said silicon substrate and portions of said silicon layer between said silicon substrate and said buried layer; and removing said buried layer without removing under-laying portions of said silicon layer, whereby said underlaying portions of said silicon layer remain on said mechanical substrate to form the thin semiconductor layer.
Claim 2
Independent Claim
118 words
A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures can be subsequently formed, comprising the steps of: forming layer of silicon upon a silicon substrate; implanting ions into said silicon layer in order to form a buried layer therein, said buried layer having etch characteristics which differ from those of said silicon layer; bonding said silicon layer to a mechanical substrate; removing said silicon substrate and portions of said silicon layer between said silicon substrate and said buried layer; and removing said buried layer without removing under-laying portions of said silicon layer, whereby said underlaying portions of said silicon layer remain on said mechanical substrate to form the thin semiconductor layer.
Claim 3
Dependent Claim
27 words
The method as recited in claim 1, wherein said silicon substrate is of a first conductivity type and said silicon layer is of a second conductivity type.
Claim 4
Dependent Claim
23 words
The method as recited in claim 1, wherein said ions comprise oxygen ions, such that said buried layer is comprised of silicon oxide.
Claim 5
Dependent Claim
23 words
The method as recited in claim 1, wherein said ions comprise nitrogen ions, such that said buried layer is comprised of silicon nitride.
Claim 6
Dependent Claim
23 words
The method as recited in claim 1, wherein said ions comprise carbon ions, such that said buried layer is comprised of silicon carbide.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said substrate is heated to approximately 500° C. during said implantation.
Claim 8
Dependent Claim
66 words
The method as recited in claim 1, wherein said step of bonding said epitaxial layer to a mechanical substrate comprises the steps of: forming a layer of silicon dioxide on an exposed surface of said silicon layer; bringing said layer of silicon dioxide and said mechanical substrate into contact; and heating said silicon dioxide layer and said mechanical substrate in order to form a bond therebetween.
Claim 9
Dependent Claim
26 words
The method as recited in claim 7, wherein said heating step is carried out at a temperature between approximately 700° C.-1200° C. in an oxidizing ambient.
Claim 10
Dependent Claim
42 words
The method as recited in claim 7, wherein a second layer of silicon dioxide is grown on said mechanical substrate, such that said silicon dioxide layer formed on said silicon layer contacts said second layer of silicon dioxide during said bonding step.
Claim 11
Dependent Claim
76 words
The method as recited in claim 1, wherein said step of bonding said epitaxial layer to a mechanical substrate comprises the steps of: forming a layer of silicon nitride on an exposed surface of said silicon layer; forming a glass layer on said silicon nitride layer; bringing said glass layer and said mechanical substrate into contact; and heating said glass layer above its glass transition temperature in order to form a bond to said mechanical substrate.
Claim 12
Dependent Claim
17 words
The method as recited in claim 10, wherein said glass layer is heated to approximately 900° C.
Claim 13
Dependent Claim
23 words
The method as recited in claim 10, wherein said glass layer is selected from the group consisting of phosphosilicate glass and boro-phosphosilicate glass.
Claim 14
Dependent Claim
121 words
The process as recited in claim 2, wherein said step of removing said silicon substrate and portions of said epitaxial layer overlaying said buried layer comprises the steps of: mechanically removing a portion of said silicon substrate; etching remaining portions of said silicon substrate and a part of said portion of said epitaxial layer between said silicon substrate and said buried region in a first etchant which does not appreciably attack a remaining part of said portion of said silicon layer between said silicon substrate and said buried region; and etching said remaining part of said portion of said silicon layer between said silicon substrate and said buried region in a second etchant which does not appreciably attack said buried layer.
Claim 15
Dependent Claim
20 words
The process as recited in claim 13, wherein said first etchant comprises a solution of hydroflouric, nitric and acetic acids.
Claim 16
Dependent Claim
15 words
The process as recited in claim 14, wherein said first etchant further comprises hydrogen peroxide.
Claim 17
Dependent Claim
14 words
The process as recited in claim 15, wherein said first etchant is ultrasonically agitated.
Claim 18
Dependent Claim
25 words
The process as recited in claim 13, wherein said second etchant comprises a solution selected from the group consisting of ethylene-diamine-pyrocatecol, ethylene-piperidine-pyrocatechol, and potassium hydroxide.
Claim 19
Dependent Claim
28 words
The process as recited in claim 1, wherein said step of removing said buried layer is performed by oxidation and subsequent etching using hydroflouric acid as an etchant.
Claim 20
Dependent Claim
26 words
The process as recited in claim 1, wherein said step of removing said buried layer is performed by etching in a CF 4 +O 2 plasma.
Claim 21
Dependent Claim
33 words
The process as recited in claim 1, wherein said ions are implanted at a concentration within the range of 1×10 16- 1×10 18 ions/cm 2 and at an energy of approximately 160 kev.
Claim 22
Independent Claim
179 words
A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures may be subsequently formed, comprising the steps of: growing an silicon layer of a second conductivity type upon a silicon substrate of a first conductivity type; implanting ions into said epitaxial layer in order to form a substantially planar buried layer of substantially uniform thickness therein, said buried layer having etch characteristics which appreciably differ from those of said epitaxial layer; bonding said epitaxial layer to a mechanical substrate; removing said semiconductor substrate and a portion of said epitaxial layer in an etchant which attacks silicon of said first conductivity type while not appreciably attacking silicon of said second conductivity type; etching remaining portions of said epitaxial layer overlaying said buried layer in an etchant which does not appreciably attack underlaying portions of said buried layer; and etching said buried layer in an etchant which does not appreciably attack underlaying portions of said epitaxial layer, said underlaying portions of said epitaxial layer remaining on said mechanical substrate to form the thin semiconductor layer.
Claim 23
Independent Claim
179 words
A method of forming a thin semiconductor layer of substantially uniform thickness upon which semiconductor structures may be subsequently formed, comprising the steps of: growing an silicon layer of a second conductivity type upon a silicon substrate of a first conductivity type; implanting ions into said epitaxial layer in order to form a substantially planar buried layer of substantially uniform thickness therein, said buried layer having etch characteristics which appreciably differ from those of said epitaxial layer; bonding said epitaxial layer to a mechanical substrate; removing said semiconductor substrate and a portion of said epitaxial layer in an etchant which attacks silicon of said first conductivity type while not appreciably attacking silicon of said second conductivity type; etching remaining portions of said epitaxial layer overlaying said buried layer in an etchant which does not appreciably attack underlaying portions of said buried layer; and etching said buried layer in an etchant which does not appreciably attack underlaying portions of said epitaxial layer, said underlaying portions of said epitaxial layer remaining on said mechanical substrate to form the thin semiconductor layer.
Claim 24
Dependent Claim
52 words
The method as recited in claim 21, wherein said ions comprise oxygen ions which are implanted at a concentration within the range of 1×10 16 -1×10 18 ions/cm 2 at an energy of 160 kev, said ions reacting with said epitaxial layer such that said buried layer is comprised of silicon oxide.
Claim 25
Dependent Claim
50 words
The method as recited in claim 21, wherein: said first etchant comprises a solution of hydroflouric, nitric and acetic acids, and hydrogen peroxide, which is ultrasonically agitated in order to improve selectivity; and said second etchant comprises a solution selected from the group consisting of ethylene-diamine-pyrocatechol acid and ethylene-piperidine-pyrocatechol acid.
Claim 26
Dependent Claim
39 words
The process as recited in claim 21, wherein prior to said step of removing said semiconductor substrate, a protective layer of silicon dioxide is formed on a surface of said mechanical substrate which remains exposed after said bonding step.
Claim 27
Independent Claim
214 words
A method for forming a thin silicon-on-insulator structure, comprising: forming a silicon layer of a first conductivity type on a first semiconductor wafer of a second conductivity type establishing a N/P junction therewith within said silicon layer; implanting into a portion of said silicon layer ions of a material which has different etching characteristics than the adjoining first portions of said silicon layer, to form a buried layer; forming a silicon dioxide layer on said silicon layer, and bonding onto said silicon dioxide layer a second semiconductor wafer; removing said first semiconductor wafer and a portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a first etchant which attacks silicon of said first conductivity type without attacking silicon of said second conductivity type, so as to expose said N/P junction; removing a remainder of said portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a second etchant that stops appreciable etching at said buried layer; and removing said buried layer with a third etchant which stop etching at the underlaying unimplanted portion of said silicon layer, thereby resulting in a thin sliicon layer of a predetermined uniform thickness atop a silicon diioxide layer which is atop said second semiconductor wafer.
Claim 28
Independent Claim
214 words
A method for forming a thin silicon-on-insulator structure, comprising: forming a silicon layer of a first conductivity type on a first semiconductor wafer of a second conductivity type establishing a N/P junction therewith within said silicon layer; implanting into a portion of said silicon layer ions of a material which has different etching characteristics than the adjoining first portions of said silicon layer, to form a buried layer; forming a silicon dioxide layer on said silicon layer, and bonding onto said silicon dioxide layer a second semiconductor wafer; removing said first semiconductor wafer and a portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a first etchant which attacks silicon of said first conductivity type without attacking silicon of said second conductivity type, so as to expose said N/P junction; removing a remainder of said portion of said silicon layer disposed between said first semiconductor layer and said buried layer with a second etchant that stops appreciable etching at said buried layer; and removing said buried layer with a third etchant which stop etching at the underlaying unimplanted portion of said silicon layer, thereby resulting in a thin sliicon layer of a predetermined uniform thickness atop a silicon diioxide layer which is atop said second semiconductor wafer.
Claim 29
Independent Claim
187 words
A method of forming a silicon-on-insulator structure, comprising the steps of: growing an epitaxial layer of a second conductivity type on a silicon substrate of a first conductivity type in order to form a N/P junction therewith within said epitaxial layer; forming a silicon dioxide layer on an exposed surface of said epitaxial layer; implanting dopant ions through said silicon dioxide layer into said epitaxial layer in order to form a buried layer of said first conductivity type within said epitaxial layer; bonding said silicon substrate to a mechanical substrate, using said silicon dioxide layer as a bonding material; removing said silicon substrate and portions of said epitaxial layer between said silicon substrate and said N/P junction with a first etchant which does not appreciably attack silicon of said second conductivity type; removing portions of said epitaxial layer between said N/P junction and a peak concentration of said dopant ions within said buried layer with a second etchant; and removing remaining portions of said buried layer with said of first etchant, remaining portions of said epitaxial layer overlaying said silicon dioxide layer to form the silicon-on-insulator structure.
Claim 30
Independent Claim
187 words
A method of forming a silicon-on-insulator structure, comprising the steps of: growing an epitaxial layer of a second conductivity type on a silicon substrate of a first conductivity type in order to form a N/P junction therewith within said epitaxial layer; forming a silicon dioxide layer on an exposed surface of said epitaxial layer; implanting dopant ions through said silicon dioxide layer into said epitaxial layer in order to form a buried layer of said first conductivity type within said epitaxial layer; bonding said silicon substrate to a mechanical substrate, using said silicon dioxide layer as a bonding material; removing said silicon substrate and portions of said epitaxial layer between said silicon substrate and said N/P junction with a first etchant which does not appreciably attack silicon of said second conductivity type; removing portions of said epitaxial layer between said N/P junction and a peak concentration of said dopant ions within said buried layer with a second etchant; and removing remaining portions of said buried layer with said of first etchant, remaining portions of said epitaxial layer overlaying said silicon dioxide layer to form the silicon-on-insulator structure.
Claim 31
Dependent Claim
32 words
The method as recited in claim 26, wherein said dopant ions comprise boron, which is implanted at a concentration of approximately 6×10 14 ions/cm 2 at an energy of approximately 2.0 Mev.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-07-21 | 1990-01-20 | 1990-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-07-21 | 1994-01-20 | 1994-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-07-21 | 1998-01-20 | 1998-07-22 | $7700.00 | Window Closed / Lapsed |