Process of epitaxial growth wherein the distance between the carrier and the transfer material is adjusted to effect either material removal from the carrier surface or deposition thereon

Claim 1

IN THE METHOD OF PRODUCING A SEMICONDUCTER DEVICE BY MONOCRYSTALLINE GROWTH OF SEMICONDUCTING LAYERS ONTO A CARRIER OF SEMICONDUCTING MATERIAL, THE CARRIER IS HEATED AT THE BEGINNING OF THE GROWTH PROCESS THROUGH A STRONG LOCAL HEATING EFFECT TO A TEMPERATURE SO HIGH THAT THE OXIDE LAYER AT THE SURFACE OF THE CARRIER IS REMOVED THROUGH A CHEMICAL REACTION OCCURRING AT THIS TEMPERATURE, THIS TEMPERATURE IS AT LEAST AS HIGH AS THE TEMPERATURE OF A BODY OF TRANSFER MATERIAL WHICH IS TO BE TRANSFERRED INTO A GASEOUS PHASE AND IS IN DIRECT CONTACT WITH A HEATING SUBSTRATE, THE TEMPERATURE OF THE CARRIER DURING THE ACTUAL GROWTH PROCESS IS MAINTAINED LOWER THAN THE TEMPERATURE OF THE MATERIAL WHICH IS TO BE TRANSFERRED INTO A GASEOUS PHASE, THE IMPROVEMENT WHICH COMPRISES SPATIALLY SEPARATING AT THE START OF THE GROWTH PROCESS, THE CARRIER AND THE BODY OF TRANSFER MATERIAL, HEATING SAID CARRIER TO A TEMPERATURE SO HIGH AS TO REMOVE THE OXIDE LAYER AT THE SURFACE, HEATING SAID BODY OF TRANSFER MATERIAL, REDUCING THE DISTANCE BETWEEN SAID CARRIER AND SAID BODY TO THE DISTANCE NECESSARY FOR CARRYING OUT A TRANSPORT REACTION, REDUCING THE TEMPERATURE OF THE CARRIER BODY TO THE TRANSPORT TEMPERATURE AND THEREAFTER CARRYING OUT THE ACTUAL TRANSPORT REACTION.