Process of pyrolytically growing epitaxial semiconductor layers upon heated semiconductor substrates

Claim 1

THE PROCESS OF PRODUCING SEMICONDUCTOR MEMBERS SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM BY THERMALLY DISSOCIATING A GASEOUS COMPOUND OF THE SEMICONDUCTOR MATERIAL AND PRECIPITATING IT AS A LAYER UPON A HEATED SUBSTRATE OF SEMICONDUCTOR MATERIAL, WHICH COMPRISES ADJUSTING AND MAINTAINING DURING A FIRST PROCESSING STAGE THE EQUILIBRIUM CONDITIONS OF THE REACTION BY BRINGING AN INERT COVER PLATE, IN THE REACTION SPACE ABOVE AND NEAR THE SUBSTRATE SURFACE THEREBY FORMING A QUASI-STATIONARY SUBSTRATE-DISSOLVING CONDITION SO AS TO ELIMINATE PART OF THE SUBSTRATE SURFACE, AND THEREAFTER, IN A SECOND PROCESSING STAGE REMOVING SAID COVER PLATE THEREBY SHIFTING THE REACTION EQUILIBRIUM TO EFFECT PRECIPITATION OF THE SEMICONDUCTOR MATERIAL UPON THE SUBSTRATE.