Vapor deposition onto stacked semiconductor wafers followed by particular cooling

Claim 1

THE PRECIPITATION METHOD OF PRODUCING ELECTRONIC SEMICONDUCTOR DEVICES HAVING A MONOCRYSTALLINE SEMICONDUCTOR BODY WITH A PLURALITY OF MONOCRYSTALLINE LAYERS OF RESPECTIVELY DIFFERENT ELECTRIC CONDUCTANCE PROPERTIES, WHICH COMPRISES STACKING IN A SEALABLE VESSEL A MULTIPLICITY OF PLATE MEMBERS HAVING ALTERNATELY DIFFERENT RESPECTIVE CONDUCTANCE PROPERTIES UPON EACH OTHER TO FORM AN AXIALLY ELONGATED STACK, SAID MEMBERS, CONSISTING OF SEMICONDUCTOR MONOCRYSTALS OF SUBSTANTIALLY THE SAME LATTICE STRUCTURE AS THE SEMICONDUCTOR SUBSTANCE TO BE PRECIPITATED; SUBJECTING THE STACK IN THE VESSEL TO A REACTION GAS WHICH CONTAINS A HALOGEN COMPUND OF SEMICONDUCTOR SUBSTANCE TO BE PRECIPITATED; HEATING THE STACK IN THE PRESENCE OF THE REACTION GAS TO A TEMPERATURE AT WHICH THE SEMICONDUCTOR SUBSTANCE IS PRECIPITATED FROM THE HALOGEN COMPOUND, AND PRODUCING A TEMPERATURE GRADIENT FROM ONE TO THE OTHER END OF THE STACK WITH THE HIGHER TEMPERATURE NEAR THE BOTTOM OF THE STACK.