JPS533075A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of mos structure field effect semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1976-06-29
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Granted: —
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Expires: 1996-06-29
Abstract
Abstract PURPOSE: To obtain a SOI device of low cost a =nd stable operation by opening holes in the SiC layer on a Si substrate, laminating a Si epitaxial layer thereon and forming channel regions in the portions in contact with the substrate. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Shinobu Fukunaga
- 👤 Takeshi Yamano
- 👤 Masahiko Yasuoka
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 10:32
CPC Classifications
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