Methods of manufacturing semiconductor devices

Abstract

Abstract IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, A SEMICONDUCTOR SUBSTRATE HAS A SURFACE THEREOF ETCHED OR OTHERWISE FORMED WITH AT LEAST ONE PROFILED PORTION, SUCH AS, A PROJECTION OR RECESS, HAVING A FACE OFFSET FROM THE SURROUNDING AREAS OF THAT SURFACE AND SIDES EXTENDING FROM THE FACE TO THE ADJACENT SURFACE AREAS, AT LEAST TWO LAYERS OF DIFFERENT CONDUCTIVITY TYPES ARE SEQUENTIALLY DEPOSITED ON THE SUBSTRATE SURFACE BY THE VAPOR GROWTH TECHNIQUE TO COVER AT LEAST THE FACE AND SIDES OF THE PROJECTION OR RECESS, AND EITHER THE SUBSTRATE OR THE OUTERMOST LAYER OF THE RESULTING ELEMENT IS SELECTIVELY REMOVED TO EXPOSE, ADJACENT THE SIDES OF THE PROJECTION OR RECESS,A CROSSSECTION OF AT LEAST THE LAYER WHICH IS CLOSEST THERETO. IN ORDER TO FACILITATE ATTACHMENT OF AN ELECTRODE TO A LAYER AT THE EXPOSED CROSS-SECTION BY INCREASING THE WIDTH OF THE LATTER, THE PLANE TO WHICH MATERIAL IS REMOVED MAY BE DIRECTED OBLIQUELY TO THE SIDES OF THE PROJECTION OR RECESS, AS BY INCLINING THE SIDES, OR THE POSITION OF THE PROJECTION OR RECESS MAY BE SELECTED SO THAT ITS FACE AND SIDES RESPECTIVELY CORRESPOND TO CRYSTAL FACES OF RELATIVELY SMALL AND LARGE CRYSTAL GROWTH SPEEDS. THE EFFECTIVE WIDTH OF A LAYER AT ITS EXPOSED CROSS-SECTION MAY ALSO BE INCREASED BY ALLOYING A PART OF AN ADJACENT LAYER OR THE ADJACENT REGION OF THE SUBSTRATE SO AS TO HAVE THE SAME TYPE CONDUCTIVITY, OR BY APPLYING A LAYER OF THE SAME CONDUCTIVITY TO THE ADJACENT LAYER OR SUBSTRATE ONLY AT THE SIDES OF THE PROJECTION OR RECESS BY EITHER THE DIFFUSION OR VAPOR GROWTH PROCESS.

Inventors

• 👤 Kinji Hoshi
• 👤 Chiaki Kumazaki
• 👤 Yoshinori Azuma
• 👤 Toshitaka Tsuchihashi
• 👤 Susumu Tadokoro
• 👤 Toshiro Kato

Bibliographic Details