Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an SOI substrate of high quality, by a method wherein an optimum condition is selected for joining while heating and observing are progressed form one direction of a stacked Si substrate when an SOI substrate is made by anodic method. CONSTITUTION:A processing chamber is kept in an N2 atmosphere; DC 30-100V is applied by an electric power source 32 for joining, and an electrode 34 is heated by an AC power source 36, to keep Si substrate 10 and 10' at a temperature of about 1000 deg.C. While the temperature is adjusted by the electric power source 36 and a voltage is adjusted by the electric power source 32, the surface of the Si substrate 10' is observed from a window 30'. By observing the color tone in detail, the applied voltage and the heating temperature are adjusted. According to this method, an Si-OH radical causes a dehydration reaction between the Si substrates as the result of heating, and an Si-O-Si radical is generated. Thus the SiO2 films are adhered with each other, the adhered more tightly by the applied voltage. By eliminating one side, an SOI substrate of high quality can be obtained.

Inventors

• 👤 Yoshihiro Arimoto
• 👤 由弘 有本

Bibliographic Details