US4803528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulating film having electrically conducting portions
Assignee: Intersil Corp
•
Filing: 1982-05-20
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Granted: 1989-02-07
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Expires: 2002-05-20
Abstract
Abstract A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.
Inventors
- 👤 Jacques I. Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
130 words
A selectively electrically conducting structure comprising: a layer of oxygenated, doped, non-single crystalline silicon film; a semiconductor substrate having a surface, the substrate including spaced source and drain regions of an insulated gate field effect device at said surface; the layer of oxygenated, doped, non-single crystalline silicon film is disposed on said surface and selectively laser irradiated so as to form substantially conducting irradiated portions disposed over the source and drain regions, and a substantially insulating non-irradiated portion disposed on the substrate surface between the source and drain regions; source and drain electrodes disposed respectively on the conducting portions of the silicon film disposed on the source and drain regions; and a gate electrode disposed over the insulating portion of the silicon film so as to form an insulated gate.
Claim 2
Dependent Claim
130 words
A selectively electrically conducting structure comprising: a layer of oxygenated, doped, non-single crystalline silicon film; a semiconductor substrate having a surface, the substrate including spaced source and drain regions of an insulated gate field effect device at said surface; the layer of oxygenated, doped, non-single crystalline silicon film is disposed on said surface and selectively laser irradiated so as to form substantially conducting irradiated portions disposed over the source and drain regions, and a substantially insulating non-irradiated portion disposed on the substrate surface between the source and drain regions; source and drain electrodes disposed respectively on the conducting portions of the silicon film disposed on the source and drain regions; and a gate electrode disposed over the insulating portion of the silicon film so as to form an insulated gate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-07 | 1992-08-08 | 1993-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-07 | 1996-08-08 | 1997-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-07 | 2000-08-08 | 2001-02-07 | $7700.00 | Window Closed / Lapsed |